Method of enhancing the removal rate of polysilicon

Abstract

A method of enhancing the removal rate of polysilicon from a substrate includes mixing an acid chemical mechanical polishing slurry containing water, an organic acid and an abrasive with an alkaline solution containing water, an abrasive, a low alkyl amine compound; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the mixture of the chemical mechanical polishing slurry and the alkaline solution onto the polishing surface at or near the interface between the polishing pad and the substrate, wherein some of the polysilicon is polished away from the substrate.

1 - 8 . (canceled) 
     
     
         9 : A chemical mechanical polishing composition consisting of:
 water;   abrasive particles;   an amine compound having a formula:   
       
         
           
           
               
               
           
         
         wherein R 1  and R 2  are independently chosen from C 1 -C 4  alkyl and R′ is C 1 -C 4  alkylene; 
         an organic acid; 
         optionally a compound containing two quaternary ammonium groups; 
         optionally a biocide; and 
         wherein a pH is greater than 10. 
       
     
     
         10 : The chemical mechanical polishing composition of  claim 9 , wherein the amine compound is selected from the group consisting of 3-(diethylamino)propylamine, N,N-dimethylethylenediamine, N,N-diethylenediamine, N,N-di-n-butylethylenediamine, 3-(dimethylamino)-1-propylamine, N-isopropyl-1,3-dipropanediamine, 2-dimethylamino-2-propylamine and mixtures thereof.