US2023085449A1PendingUtilityA1

Substrate processing method and substrate processing apparatus

Assignee: TOKYO ELECTRON LTDPriority: Feb 3, 2020Filed: Jan 20, 2021Published: Mar 16, 2023
Est. expiryFeb 3, 2040(~13.5 yrs left)· nominal 20-yr term from priority
Inventors:Takafumi Niwa
C23C 18/1632C23C 18/163C23C 18/1676C23C 18/168C23C 18/1628
52
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Claims

Abstract

A substrate processing method includes holding a substrate W by using a holder 52 configured to hold the substrate; supplying a plating liquid L onto a top surface of the held substrate; covering the substrate by using a cover body 6 before or after the supplying of the plating liquid; heating the plating liquid on the substrate by using a heating device 63 provided in the cover body, while keeping the substrate covered with the cover body; and supplying a cooling gas to a bottom surface of the substrate or the holder from below the substrate in the heating of the plating liquid.

Claims

exact text as granted — not AI-modified
1 . A substrate processing method, comprising:
 holding a substrate by using a holder configured to hold the substrate;   supplying a plating liquid onto a top surface of the held substrate;   covering the substrate by using a cover body before or after the supplying of the plating liquid;   heating the plating liquid on the substrate by using a heating device provided in the cover body, while keeping the substrate covered with the cover body; and   supplying a cooling gas to a bottom surface of the substrate or the holder from below the substrate in the heating of the plating liquid.   
     
     
         2 . The substrate processing method of  claim 1 ,
 wherein in the supplying of the cooling gas, the cooling gas is supplied to the bottom surface of the substrate or the holder when a temperature of the plating liquid reaches a target temperature.   
     
     
         3 . The substrate processing method of  claim 2 ,
 wherein the target temperature is a set temperature of the heating device.   
     
     
         4 . The substrate processing method of  claim 1 ,
 wherein the cooling gas has a room temperature.   
     
     
         5 . The substrate processing method of  claim 1 ,
 wherein the heating device has multiple heating regions whose temperatures are individually allowed to be adjusted, and   in the supplying of the cooling gas, the cooling gas is supplied from multiple nozzles disposed below the substrate while being located at positions respectively corresponding to the multiple heating regions.   
     
     
         6 . A substrate processing apparatus, comprising:
 a holder configured to hold a substrate;   a plating liquid supply configured to supply a plating liquid onto a top surface of the substrate held by the holder;   a cover body configured to cover the substrate held by the holder;   a moving mechanism configured to move the cover body;   a heating device provided in the cover body;   a cooling gas supply disposed below the substrate held by the holder, and configured to supply a cooling gas to a bottom surface of the substrate or the holder; and   a controller configured to output a control signal such that holding the substrate by using the holder, supplying the plating liquid onto the top surface of the substrate by using the plating liquid supply, covering the substrate by using the cover body before or after the supplying of the plating liquid, heating the plating liquid on the substrate by using the heating device while keeping the substrate covered with the cover body, and supplying the cooling gas from the cooling gas supply to the bottom surface of the substrate or the holder in the heating of the plating liquid are performed.

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