Semiconductor structure having verticle conductive graphene and method for forming the same

Abstract

A semiconductor structure includes a substrate, a dielectric layer, and a graphene conductive structure. The dielectric layer is disposed on the substrate, and has an inner lateral surface that is perpendicular to the substrate. The graphene conductive structure is formed in the dielectric layer and has at least one graphene layer extending in a direction parallel to the inner lateral surface of the dielectric layer.

What is claimed is: 
     
         1 . A semiconductor structure comprising:
 a substrate;   a dielectric layer disposed on the substrate, and having an inner lateral surface that is perpendicular to the substrate; and   a graphene conductive structure that is formed in the dielectric layer and that has at least one graphene layer extending in a direction parallel to the inner lateral surface of the dielectric layer.   
     
     
         2 . The semiconductor structure as claimed in  claim 1 , further comprising a metal layer that is connected between the inner lateral surface of the dielectric layer and the graphene conductive structure. 
     
     
         3 . The semiconductor structure as claimed in  claim 2 , wherein the graphene conductive structure has a first portion and a second portion, a width of the first portion being larger than a width of the second portion. 
     
     
         4 . The semiconductor structure as claimed in  claim 3 , wherein the graphene conductive structure has a width and a height, the width of the graphene conductive structure being greater than about 1.5 nm, a ratio of the height to the width being smaller than about 10. 
     
     
         5 . The semiconductor structure as claimed in  claim 1 , further comprising a conductive feature that is surrounded by the graphene conductive structure. 
     
     
         6 . The semiconductor structure as claimed in  claim 1 , wherein:
 the graphene conductive structure has a first portion and a second portion, a width of the first portion being larger than a width of the second portion; and   the semiconductor structure further comprises a conductive feature that is surrounded by the first portion of the graphene conductive structure.   
     
     
         7 . The semiconductor structure as claimed in  claim 6 , wherein the first portion of the graphene conductive structure has a width greater than about 1.5 nm, the graphene conductive structure having a height, a ratio of the height to the width being smaller than about 10. 
     
     
         8 . The semiconductor structure as claimed in  claim 1 , wherein the graphene conductive structure has a width greater than about 1.5 nm and a height, a ratio of the height to the width being smaller than about 5. 
     
     
         9 . The semiconductor structure as claimed in  claim 1 , wherein the graphene conductive structure is doped with an intercalating material. 
     
     
         10 . The semiconductor structure as claimed in  claim 9 , wherein the intercalating material is made of tetraethylenepentamine, diethylenetriamine, o-phenylenediamine, 1,2,4-triazole, tetraethylene glycol, phenol, catechol, trifluorobenzene, hexafluorobenzene, FeCl 3 , MoCl 5 , AuCl 3 , AsF 5 , SbF 5 , HNO 3 , CuCl 2 , SbCl 5 , AuCl 5 , NiCl 2 , Cs—C 2 H 4 , NH 3 , ZnMg, or combinations thereof. 
     
     
         11 . The semiconductor structure as claimed in  claim 9 , wherein:
 the semiconductor structure further comprises a conductive feature that is surrounded by the graphene conductive structure; and   the doped graphene conductive structure has an electrical conductivity substantially equaling that of the conductive feature.   
     
     
         12 . The semiconductor structure as claimed in  claim 2 , wherein the metal layer is made of Co, Ni, Ru, Rh, Pd, Re, Cu, Ag, Ir, Pt, Au, Ti, Hf, Ta, W, or combinations thereof. 
     
     
         13 . A semiconductor structure comprising:
 a first dielectric layer;   a conductive layer that is formed in the first dielectric layer, the conductive layer including metal, graphene, or a combination thereof;   a second dielectric layer disposed on the first dielectric layer; and   a graphene conductive structure that is formed in the second dielectric layer, that has at least one graphene layer extending in a direction perpendicular to the first dielectric layer, and that is electrically connected to the conductive layer.   
     
     
         14 . A method of making a semiconductor structure, comprising:
 forming a dielectric layer on a substrate;   forming an interconnect opening in the dielectric layer, the interconnect opening being defined by an inner lateral surface of the dielectric layer that is perpendicular to the substrate; and   forming a graphene conductive structure in the interconnect opening, the graphene conductive structure having at least one graphene layer extending in a direction parallel to the inner lateral surface.   
     
     
         15 . The method as claimed in  claim 14 , further comprising:
 before the formation of the graphene conductive structure, forming a metal layer on the dielectric layer and covering the inner lateral surface; and   after the formation of the metal layer and before the formation of the graphene conductive structure, removing a portion of the metal layer and leaving the metal layer on the inner lateral surface.   
     
     
         16 . The method as claimed in  claim 14 , further comprising doping the graphene conductive structure with an intercalating material. 
     
     
         17 . The method as claimed in  claim 16 , wherein the intercalating material is made of tetraethylenepentamine, diethylenetriamine, o-phenylenediamine, 1,2,4-triazole, tetraethylene glycol, phenol, catechol, trifluorobenzene, hexafluorobenzene, FeCl 3 , MoCl 5 , AuCl 3 , AsF 5 , SbF 5 , HNO 3 , CuCl 2 , SbCl 5 , AuCl 5 , NiCl 2 , Cs—C 2 H 4 , NH 3 , ZnMg, or combinations thereof. 
     
     
         18 . The method as claimed in  claim 14 , further comprising forming a conductive feature that is surrounded by the graphene conductive structure. 
     
     
         19 . The method as claimed in  claim 14 , wherein the interconnect opening has a via and a trench which has a width larger than that of the via and which is in spatial communication with the via. 
     
     
         20 . The method as claimed in  claim 19 , further comprising:
 before the formation of the graphene conductive structure, forming a metal layer on the dielectric layer and covering the inner lateral surface; and   after formation of the metal layer and before the formation of the graphene conductive structure, removing a portion of the metal layer and leaving the metal layer on the inner lateral surface.