Method for fabricating chamber parts

Abstract

One example of the disclosure provides a method of fabricating a chamber component with a coating comprising a yttrium containing material with desired film properties. In one example, the method of fabricating a coating material includes providing a base structure comprising an aluminum containing material. The method further includes forming a coating layer that includes a yttrium containing material on the base structure. The method also includes thermal treating the coating layer to form a treated coating layer.

1 . A chamber component applicable for semiconductor processing, the chamber component comprising:
 a structure, the structure comprising a surface;   a coating layer formed on the surface of the structure, the coating layer comprising a yttrium containing material having a yttrium to oxide (Y:O) ratio within a range of about 1:1 to about 2:1, and the coating layer having:
 a film density greater than 4.0 g/cm 3 , 
 a thickness within a range of about 0.5 μm to about 50 μm, and 
 a pore density less than 2%. 
   
     
     
         2 . The chamber component of  claim 1 , wherein the yttrium containing material is at least one of: yttrium oxide, fluorine yttrium oxide, or fluorine yttrium oxide with metal dopants. 
     
     
         3 . The chamber component of  claim 2 , wherein the structure comprises an aluminum containing material. 
     
     
         4 . The chamber component of  claim 2 , wherein the coating layer comprises a coating surface having a surface roughness greater than Ra 5 micrometer. 
     
     
         5 . The chamber component of  claim 4 , wherein the film density is less than or equal to about 5.2 g/cm 3 . 
     
     
         6 . The chamber component of  claim 5 , wherein the surface of the structure is an outer surface of a gas distribution plate or a substrate support assembly. 
     
     
         7 . A chamber component applicable for semiconductor processing, the chamber component comprising:
 a structure, the structure comprising a surface;   a laser treated coating layer formed on the surface of the structure, the laser treated coating layer comprising a yttrium containing material, and the laser treated coating layer having a film density greater than 4.0 g/cm 3 .   
     
     
         8 . The chamber component of  claim 7 , wherein the laser treated coating layer has a pore density less than 2%. 
     
     
         9 . The chamber component of  claim 7 , wherein the yttrium containing material is at least one of: yttrium oxide, fluorine yttrium oxide, or fluorine yttrium oxide with metal dopants. 
     
     
         10 . The chamber component of  claim 7 , wherein the laser treated coating layer has a thickness within a range of about 0.5 μm to about 50 μm. 
     
     
         11 . The chamber component of  claim 7 , wherein the structure is a gas distribution plate or a substrate support assembly for disposition in a processing chamber. 
     
     
         12 . The chamber component of  claim 7 , wherein the laser treated coating layer comprises a coating surface having a surface roughness greater than Ra 5 micrometer. 
     
     
         13 . The chamber component of  claim 7 , wherein the structure comprises an aluminum containing material. 
     
     
         14 . The chamber component of  claim 13 , wherein the aluminum containing material of the structure is Al 2 O 3 , AlN, or a ceramic material. 
     
     
         15 . The chamber component of  claim 7 , wherein the film density is less than or equal to about 5.2 g/cm 3 . 
     
     
         16 . The chamber component of  claim 7 , wherein the yttrium containing material has a yttrium to oxide (Y:O) ratio within a range of about 1:1 to about 2:1. 
     
     
         17 . A processing chamber applicable for semiconductor processing, comprising:
 a chamber body that at least partially defines an interior volume;   a substrate support assembly positioned in the interior volume;   a chamber component, comprising:
 a structure comprising a surface and an aluminum containing material; 
 a coating layer formed on the surface of the structure, the coating layer comprising a yttrium containing material, and the coating layer having a film density greater than 4.0 g/cm 3 . 
   
     
     
         18 . The processing chamber of  claim 17 , wherein the chamber component is a gas distribution plate positioned in the interior volume. 
     
     
         19 . The processing chamber of  claim 17 , wherein the chamber component is at least part of the substrate support assembly. 
     
     
         20 . The chamber component of  claim 17 , wherein the yttrium containing material is at least one of: yttrium oxide, fluorine yttrium oxide, or fluorine yttrium oxide with metal dopants.