Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium

Abstract

Described herein is a technique capable of exhausting a process gas in a wide pressure range. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber; a gas supply system configured to supply a process gas containing a compound capable of reacting with a metal; and a gas exhaust system configured to exhaust an inner atmosphere of the process chamber, wherein the gas exhaust system includes: a common exhaust piping; a first exhaust piping made of a resin incapable of reacting with the compound and whose one end is connected to the common exhaust piping via a first valve and the other end is connected to a first exhauster; and a second exhaust piping made of the metal and whose one end is connected to the common exhaust piping via a second valve and the other end is connected to a second exhauster.

What is claimed is: 
     
         1 . A substrate processing apparatus comprising:
 a process chamber in which a substrate is accommodated;   a first exhaust piping configured to be capable of exhausting an inner atmosphere of the process chamber until an inner pressure of the process chamber reaches a pressure within a first pressure range;   a second exhaust piping configured to be capable of exhausting the inner atmosphere of the process chamber until the inner pressure of the process chamber reaches a pressure within a second pressure range that is lower than the first pressure range; and   a common exhaust piping in communication with the process chamber and configured to connect the first exhaust piping to the second exhaust piping,   wherein an inner surface of the first exhaust piping is made of a material whose reactivity to a compound that is contained in a process gas used for processing the substrate is lower than that of a material constituting an inner surface of the second exhaust piping.   
     
     
         2 . The substrate processing apparatus of  claim 1 , wherein one end of the first exhaust piping is connected to the common exhaust piping via a first pressure adjusting valve, and
 the other end of the first exhaust piping is connected to a first exhauster configured to exhaust the process chamber until the inner pressure thereof reaches the pressure within the first pressure range.   
     
     
         3 . The substrate processing apparatus of  claim 2 , wherein one end of the second exhaust piping is connected to the common exhaust piping via a second pressure adjusting valve, and
 the other end of the second exhaust piping is connected to a second exhauster configured to exhaust the process chamber until the inner pressure thereof reaches the pressure within the second pressure range.   
     
     
         4 . The substrate processing apparatus of  claim 3 , further comprising:
 a gas supply system configured to supply the process gas into the process chamber; and   a controller configured to be capable of controlling the gas supply system, the first pressure adjusting valve and the second pressure adjusting valve.   
     
     
         5 . The substrate processing apparatus of  claim 1 , wherein the common exhaust piping comprises a metal piping whose inner surface is surface-treated so as not to react with the compound. 
     
     
         6 . The substrate processing apparatus of  claim 1 , wherein the inner surface of the first exhaust piping is made of a resin incapable of reacting with the compound. 
     
     
         7 . The substrate processing apparatus of  claim 4 , further comprising:
 a first pressure sensor configured to measure an inner pressure of the common exhaust piping within the first pressure range; and   a second pressure sensor configured to measure the inner pressure of the common exhaust piping within the first pressure range and the second pressure range,   wherein an opening degree of the first pressure adjusting valve is controlled based on a pressure measured by the first pressure sensor, and   an opening degree of the second pressure adjusting valve is controlled based on a pressure measured by the second pressure sensor.   
     
     
         8 . The substrate processing apparatus of  claim 7 , wherein a pressure range measured by the first pressure sensor is narrower than a pressure range measured by the second pressure sensor. 
     
     
         9 . The substrate processing apparatus of  claim 8 , wherein the first pressure sensor is configured to measure a pressure ranging from 600 Torr to an atmospheric pressure at most, and
 the second pressure sensor is configured to measure a pressure ranging from 0 Torr to the atmospheric pressure at most.   
     
     
         10 . The substrate processing apparatus of  claim 7 , wherein the second pressure adjusting valve is provided on the second exhaust piping more upstream of the second exhauster, and
 at least a portion of the second exhaust piping between the second pressure adjusting valve and the second exhauster is configured as a metal piping.   
     
     
         11 . The substrate processing apparatus of  claim 10 , wherein the at least portion of the second exhaust piping is configured as the metal piping whose inner surface is surface-treated so as not to react with the compound contained in the process gas. 
     
     
         12 . The substrate processing apparatus of  claim 7 , wherein the controller is further configured to be capable of controlling the first pressure adjusting valve such that the pressure measured by the first pressure sensor reaches a predetermined first process pressure when supplying the process gas into the process chamber by controlling the gas supply system, and to be capable of controlling the second pressure adjusting valve such that the pressure measured by the second pressure sensor reaches a predetermined second process pressure lower than the first process pressure. 
     
     
         13 . The substrate processing apparatus of  claim 12 , wherein the first process pressure is a predetermined pressure ranging from 600 Torr to an atmospheric pressure at most. 
     
     
         14 . The substrate processing apparatus of  claim 1 , wherein the process gas comprises a gas containing hydrogen peroxide as the compound. 
     
     
         15 . A method of manufacturing a semiconductor device comprising:
 (a) placing a substrate in a process chamber;   (b) exhausting an inner atmosphere of the process chamber until an inner pressure of the process chamber reaches a pressure within a first pressure range; and   (c) exhausting the inner atmosphere of the process chamber until the inner pressure of the process chamber reaches a pressure within a second pressure range,   wherein (a) and (b) are performed by a gas supply system comprising:   a first exhaust piping configured to be capable of exhausting the inner atmosphere of the process chamber until the inner pressure of the process chamber reaches the pressure within the first pressure range;   a second exhaust piping configured to be capable of exhausting the inner atmosphere of the process chamber until the inner pressure of the process chamber reaches the pressure within the second pressure range that is lower than the first pressure range; and   a common exhaust piping in communication with the process chamber and configured to connect the first exhaust piping to the second exhaust piping, and   wherein an inner surface of the first exhaust piping is made of a material whose reactivity to a compound that is contained in a process gas used for processing the substrate is lower than that of a material constituting an inner surface of the second exhaust piping.   
     
     
         16 . A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform:
 (a) placing a substrate in a process chamber;   (b) exhausting an inner atmosphere of the process chamber until an inner pressure of the process chamber reaches a pressure within a first pressure range; and   (c) exhausting the inner atmosphere of the process chamber until the inner pressure of the process chamber reaches a pressure within a second pressure range,   wherein (a) and (b) are performed by a gas supply system comprising:   a first exhaust piping configured to be capable of exhausting the inner atmosphere of the process chamber until the inner pressure of the process chamber reaches the pressure within the first pressure range;   a second exhaust piping configured to be capable of exhausting the inner atmosphere of the process chamber until the inner pressure of the process chamber reaches the pressure within the second pressure range that is lower than the first pressure range; and   a common exhaust piping in communication with the process chamber and configured to connect the first exhaust piping to the second exhaust piping, and   wherein an inner surface of the first exhaust piping is made of a material whose reactivity to a compound that is contained in a process gas used for processing the substrate is lower than that of a material constituting an inner surface of the second exhaust piping.