Light-emitting diode epitaxial structure and manufacturing method thereof, and light-emitting diode device

Abstract

A light-emitting diode (LED) epitaxial structure, an LED device, and a manufacturing method of an LED epitaxial structure are provided. The LED epitaxial structure 100 includes an n-type confinement layer 20, an n-type waveguide layer 30, a light-emitting layer 40, a p-type waveguide layer 50, and a p-type confinement layer 60 that are sequentially stacked. The p-type waveguide layer 50 includes a first p-type waveguide sub-layer 51, an electron blocking layer 52, and a second p-type waveguide sub-layer 53 that are sequentially stacked, where the first p-type waveguide sub-layer 51 is disposed closer to the light-emitting layer 40 than the second p-type waveguide sub-layer 53, and the electron blocking layer 52 includes at least one oxide layer of aluminumygallium1-yarsenide (AlyGa1-yAs) 521.

What is claimed is: 
     
         1 . A light-emitting diode (LED) epitaxial structure, comprising an n-type confinement layer, an n-type waveguide layer, a light-emitting layer, a p-type waveguide layer, and a p-type confinement layer that are sequentially stacked, wherein
 the p-type waveguide layer comprises a first p-type waveguide sub-layer, an electron blocking layer, and a second p-type waveguide sub-layer that are sequentially stacked, wherein the first p-type waveguide sub-layer is disposed closer to the light-emitting layer than the second p-type waveguide sub-layer, and the electron blocking layer comprises at least one oxide layer of aluminum y gallium 1-y arsenide (Al y Ga 1-y As).   
     
     
         2 . The LED epitaxial structure of  claim 1 , wherein the oxide layer of Al y Ga 1-y As has a thickness ranging from 0.5 nm to 5 nm. 
     
     
         3 . The LED epitaxial structure of  claim 1 , wherein the electron blocking layer comprises at least two oxide layers of Al y Ga 1-y As and at least one (aluminum x gallium 1-x ) 0.5 indium 0.5 phosphorus ((Al x Ga 1-x ) 0.5 In 0.5 P) layer that are stacked, and the (Al x Ga 1-x ) 0.5 In 0.5 P layer and the oxide layers of Al y Ga 1-y As are alternately stacked, wherein the number of oxide layers of Al y Ga 1-y As is one more than the number of (Al x Ga 1-x ) 0.5 In 0.5 P layers, and two layers among the at least two oxide layers of Al y Ga 1-y As are respectively disposed close to the first p-type waveguide sub-layer and the second p-type waveguide sub-layer. 
     
     
         4 . The LED epitaxial structure of  claim 3 , wherein the electron blocking layer comprises 3 to 11 oxide layers of Al y Ga 1-y As and 2 to 10 (Al x Ga 1-x ) 0.5 In 0.5 P layers. 
     
     
         5 . The LED epitaxial structure of  claim 1 , wherein a value of y of an oxide of Al y Ga 1-y As satisfies 0.5≤y≤1.0. 
     
     
         6 . The LED epitaxial structure of  claim 1 , wherein the oxide layer of Al y Ga 1-y As comprises an oxide of carbon-doped Al y Ga 1-y As. 
     
     
         7 . The LED epitaxial structure of  claim 3 , wherein a value of x of (Al x Ga 1-x ) 0.5 In 0.5 P satisfies 0.5≤x≤1.0. 
     
     
         8 . The LED epitaxial structure of  claim 1 , wherein the light-emitting layer is a multiple quantum well (MQW) active layer, wherein the MQW active layer comprises at least one potential barrier layer and at least one potential well layer that are alternately stacked. 
     
     
         9 . A light-emitting diode (LED) device, comprising an n electrode, a p electrode, and an LED epitaxial structure comprising an n-type confinement layer, an n-type waveguide layer, a light-emitting layer, a p-type waveguide layer, and a p-type confinement layer that are sequentially stacked, wherein the p-type waveguide layer comprises a first p-type waveguide sub-layer, an electron blocking layer, and a second p-type waveguide sub-layer that are sequentially stacked, wherein the first p-type waveguide sub-layer is disposed closer to the light-emitting layer than the second p-type waveguide sub-layer, and the electron blocking layer comprises at least one oxide layer of aluminum y gallium 1-y arsenide (Al y Ga 1-y As) and wherein the n electrode is electrically coupled with the n-type confinement layer, and the p electrode is electrically coupled with the p-type confinement layer. 
     
     
         10 . The LED device of  claim 9 , wherein the oxide layer of Al y Ga 1-y As has a thickness ranging from 0.5 nm to 5 nm. 
     
     
         11 . The LED device of  claim 9 , wherein the electron blocking layer comprises at least two oxide layers of Al y Ga 1-y As and at least one (aluminum x gallium 1-x ) 0.5 indium 0.5 phosphorus ((Al x Ga 1-   x ) 0.5 In 0.5 P) layer that are stacked, and the (Al x Ga 1-x ) 0.5 In 0.5 P layer and the oxide layers of Al y Ga 1-y As are alternately stacked, wherein the number of oxide layers of Al y Ga 1-y As is one more than the number of (Al x Ga 1-x ) 0.5 In 0.5 P layers, and two layers among the at least two oxide layers of Al y Ga 1- y As are respectively disposed close to the first p-type waveguide sub-layer and the second p-type waveguide sub-layer. 
     
     
         12 . The LED device of  claim 11 , wherein the electron blocking layer comprises 3 to 11 oxide layers of Al y Ga 1-y As and 2 to 10 (Al x Ga 1-x ) 0.5 In 0.5 P layers. 
     
     
         13 . The LED device of  claim 9 , wherein a value of y of an oxide of Al y Ga 1-y As satisfies 0.5≤y≤1.0. 
     
     
         14 . The LED device of  claim 9 , wherein the oxide layer of Al y Ga 1-y As comprises an oxide of carbon-doped Al y Ga 1-y As. 
     
     
         15 . The LED device of  claim 11 , wherein a value of x of (Al x Ga 1-x ) 0.5 In 0.5 P satisfies 0.5≤×≤1.0. 
     
     
         16 . The LED device of  claim 16 , wherein the light-emitting layer is a multiple quantum well (MQW) active layer, wherein the MQW active layer comprises at least one potential barrier layer and at least one potential well layer that are alternately stacked. 
     
     
         17 . A manufacturing method of a light-emitting diode (LED) epitaxial structure, comprising: 
 providing a substrate;   forming an n-type confinement layer on the substrate;   forming an n-type waveguide layer on one side of the n-type confinement layer away from the substrate;   forming a light-emitting layer on one side of the n-type waveguide layer away from the n-type confinement layer;   forming a p-type waveguide layer on one side of the light-emitting layer away from the n-type waveguide layer, wherein forming the p-type waveguide layer comprises forming, on one side of the light-emitting layer away from the n-type waveguide layer, a first p-type waveguide sub-layer, an electron blocking layer, and a second p-type waveguide sub-layer that are sequentially stacked, and the electron blocking layer comprises at least one oxide layer of aluminum y gallium 1- y arsenide (Al y Ga 1-y As); and   forming a p-type confinement layer on one side of the p-type waveguide layer away from the light-emitting layer.   
     
     
         18 . The manufacturing method of an LED epitaxial structure of  claim 17 , wherein forming the electron blocking layer comprises:
 forming an Al y Ga 1-y As layer on one side of the first p-type waveguide sub-layer away from the light-emitting layer by introducing arsine, trimethylgallium (TMGa), and trimethylaluminium (TMAl); and   forming the oxide layer of Al y Ga 1-y As by oxidizing the Al y Ga 1-y As layer.   
     
     
         19 . The manufacturing method of an LED epitaxial structure of  claim 18 , wherein forming the Al y Ga 1-y As layer on the side of the first p-type waveguide sub-layer away from the light-emitting layer by introducing arsine, TMGa, and TMAl comprises:
 forming a carbon-doped Al y Ga 1-y As layer on the side of the first p-type waveguide sub-layer away from the light-emitting layer by introducing arsine, TMGa, TMAl, and a carbon precursor, wherein the carbon precursor comprises tetrabromomethane or tetrachloromethane.   
     
     
         20 . The manufacturing method of an LED epitaxial structure of  claim 17 , wherein the electron blocking layer comprises at least two oxide layers of Al y Ga 1-y As, and forming the electron blocking layer comprises:
 forming an Al y Ga 1-y As layer on one side of the first p-type waveguide sub-layer away from the light-emitting layer by introducing arsine, TMGa, and TMAl;   forming an (aluminum x gallium 1-x ) 0.5 indium 0.5 phosphorus ((Al x Ga 1-x ) 0.5 In 0.5 P) layer on one side of the Al y Ga 1-y As layer away from the first p-type waveguide sub-layer by introducing phosphine, TMGa, TMAl, and trimethylindium;   forming, on the side of the first p-type waveguide sub-layer away from the light-emitting layer, Al y Ga 1-y As layers and (Al x Ga 1-x ) 0.5 In 0.5 P layers that are alternately stacked by repeatedly and alternately forming the Al y Ga 1-y As layers and the (Al x Ga 1-x ) 0.5 In 0.5 P layers; and   forming the oxide layers of Al y Ga 1-y As by oxidizing the Al y Ga 1-y As layers.