US2023034399A1PendingUtilityA1

Substrate processing system and method of processing substrate

Assignee: TOKYO ELECTRON LTDPriority: Jul 27, 2021Filed: Jul 26, 2022Published: Feb 2, 2023
Est. expiryJul 27, 2041(~15 yrs left)· nominal 20-yr term from priority
H10P 72/0604H10P 72/0462H10P 72/0461H10P 72/0452H10P 72/0402G01F 15/005G01F 15/185G01F 15/02G01F 1/34H10P 72/0451G01F 1/50H01L 21/67253
46
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Claims

Abstract

A substrate processing system includes a chamber group including chambers configured to process a substrate in a desired process gas, a gas box group including gas boxes configured to supply the process gas to each of the chambers, a flow rate measuring device configured to measure a flow rate of the process gas supplied from the gas box group, and an exhaust device connected to the chamber group and the flow rate measuring device. The flow rate measuring device includes a measuring instrument and a measurement pipe connected to the gas box group and the measuring instrument and configured to flow the process gas through the gas box group and the measuring instrument. The measurement pipe includes branch pipes connected to each of the gas boxes, a main pipe connected to each of the branch pipes and the measuring instrument, and branch pipe valves provided in the branch pipes.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A substrate processing system comprising:
 a chamber group including a plurality of chambers configured to process a substrate in a desired process gas;   a gas box group including a plurality of gas boxes configured to supply the process gas to each of the plurality of chambers;   a flow rate measuring device configured to measure a flow rate of the process gas supplied from the gas box group; and   an exhaust device connected to the chamber group and the flow rate measuring device,   wherein the flow rate measuring device includes a measuring instrument and a measurement pipe connected to the gas box group and the measuring instrument and configured to flow the process gas through the gas box group and the measuring instrument,   wherein the measurement pipe includes a plurality of branch pipes connected to each of the plurality of gas boxes, a main pipe connected to each of the plurality of branch pipes and the measuring instrument, and branch pipe valves provided in the plurality of branch pipes, and   wherein the measuring instrument includes one or more pressure sensors configured to measure an internal pressure of the measuring instrument, a temperature sensor configured to measure an internal temperature of the measuring instrument, a measuring instrument primary valve provided at an end portion of the side connected to the measurement pipe in the measuring instrument, and a measuring instrument secondary valve provided at an end portion of the side connected to the exhaust device.   
     
     
         2 . The substrate processing system of  claim 1 , wherein the chamber group, the gas box group, and the measurement pipe are each provided in a plural number, and the plurality of measurement pipes include a main pipe valve provided in the main pipe. 
     
     
         3 . The substrate processing system of  claim 2 , wherein the exhaust device includes an exhaust pipe connected to the chambers and provided with a valve, and a plurality of exhaust pipes connected to the flow rate measuring device and corresponding to the plurality of gas box groups,
 wherein the plurality of exhaust pipes include an exhaust main pipe provided with a valve, and a plurality of exhaust branch pipes connected to the exhaust main pipe and provided with a valve, and   wherein the exhaust pipe connected to the chambers and the exhaust branch pipes merge.   
     
     
         4 . The substrate processing system of  claim 3 , further comprising: a controller configured to control the gas box group so that when the process gas is output from one gas box in the gas box group, the process gas is not output from the other gas boxes. 
     
     
         5 . The substrate processing system of  claim 1 , further comprising: a controller configured to control the gas box group so that when the process gas is output from one gas box in the gas box group, the process gas is not output from the other gas boxes. 
     
     
         6 . A substrate processing system comprising:
 a plurality of chamber groups including a plurality of chambers configured to process a substrate in a desired process gas;   a plurality of gas box groups including a plurality of gas boxes configured to supply the process gas to each of the plurality of chambers;   a flow rate measuring device configured to measure a flow rate of the process gas supplied from one of the plurality of gas box groups; and   an exhaust device connected to the chamber groups and the flow rate measuring device,   wherein the flow rate measuring device includes a measuring instrument and a plurality of measurement pipes connected to each of the plurality of gas box groups and the measuring instrument and configured to flow the process gas through the gas box groups and the measuring instrument,   wherein one of the measurement pipes includes a plurality of branch pipes connected to each of the plurality of gas boxes in the corresponding one gas box group, a main pipe connected to each of the plurality of branch pipes and the measuring instrument, and a main pipe valve provided in the main pipe, and   wherein the measuring instrument includes one or more pressure sensors configured to measure an internal pressure of the measuring instrument, a temperature sensor configured to measure an internal temperature of the measuring instrument, a measuring instrument primary valve provided at an end portion of the side connected to the measurement pipe in the measuring instrument, and a measuring instrument secondary valve provided at an end portion of the side connected to the exhaust device.   
     
     
         7 . A method of processing a substrate in a substrate processing system, wherein the substrate processing system includes:
 a chamber group including a plurality of chambers configured to process a substrate in a desired process gas;   a gas box group including a plurality of gas boxes configured to supply the process gas to each of the plurality of chambers;   a flow rate measuring device configured to measure a flow rate of the process gas supplied from the gas box group; and   an exhaust device connected to the chamber group and the flow rate measuring device,   wherein the flow rate measuring device includes a measuring instrument and a measurement pipe connected to the gas box group and the measuring instrument and configured to flow the process gas through the gas box group and the measuring instrument,   wherein the measurement pipe includes a plurality of branch pipes connected to each of the plurality of gas boxes, a main pipe connected to each of the plurality of branch pipes and the measuring instrument, and branch pipe valves provided in the plurality of branch pipes, and   wherein the measuring instrument includes one or more pressure sensors configured to measure an internal pressure of the measuring instrument, a temperature sensor configured to measure an internal temperature of the measuring instrument, a measuring instrument primary valve provided at an end portion of the side connected to the measurement pipe in the measuring instrument, and a measuring instrument secondary valve provided at an end portion of the side connected to the exhaust device,   the method comprising:   forming a closed state of the branch pipe valve in the branch pipe connected to another gas box other than one gas box that supplies the process gas whose flow rate is measured; and   in the closed state, measuring the flow rate of the process gas supplied from the one gas box that supplies the process gas whose flow rate is measured.   
     
     
         8 . A method of processing a substrate in a substrate processing system, wherein the substrate processing system includes:
 a plurality of chamber groups including a plurality of chambers configured to process a substrate in a desired process gas;   a plurality of gas box groups including a plurality of gas boxes configured to supply the process gas to each of the plurality of chambers;   a flow rate measuring device configured to measure a flow rate of the process gas supplied from one of the plurality of gas box groups; and   an exhaust device connected to the chamber groups and the flow rate measuring device,   wherein the flow rate measuring device includes a measuring instrument and a plurality of measurement pipes connected to each of the plurality of gas box groups and the measuring instrument and configured to flow the process gas through the gas box groups and the measuring instrument,   wherein one of the measurement pipes includes a plurality of branch pipes connected to each of the plurality of gas boxes in the corresponding one gas box group, a main pipe connected to each of the plurality of branch pipes and the measuring instrument, and a main pipe valve provided in the main pipe,   wherein the measuring instrument includes one or more pressure sensors configured to measure an internal pressure of the measuring instrument, a temperature sensor configured to measure an internal temperature of the measuring instrument, a measuring instrument primary valve provided at an end portion of the side connected to the measurement pipe in the measuring instrument, and a measuring instrument secondary valve provided at an end portion of the side connected to the exhaust device,   wherein the exhaust device includes an exhaust pipe connected to the chambers and provided with a valve, and a plurality of exhaust pipes connected to the flow rate measuring device and corresponding to the plurality of gas box groups,   wherein the plurality of exhaust pipes include an exhaust main pipe provided with a valve and a plurality of exhaust branch pipes connected to the exhaust main pipe and provided with a valve, and   wherein the exhaust pipe connected to the chambers and the exhaust branch pipes merge,   the method comprising:   forming a closed state of the main pipe valve of the measurement pipe connected to another gas box group other than one gas box group including one gas box that supplies the process gas whose flow rate is measured; and   in the closed state, measuring the flow rate of the process gas supplied from the one gas box that supplies the process gas whose flow rate is measured.

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