Germanium-Silicon-Tin (GeSiSn) Heterojunction Bipolar Transistor Devices

Abstract

A semiconductor device having a GeSiSn base region combined with an emitter region and a collector region can be used to fabricate a bipolar transistor or a heterojunction bipolar transistor. The GeSiSn base region can be compositionally graded or latticed matched or strained to GaAs. The GeSiSn base region can be wafer bonded to a GaN or SiC collector region.

1 . A method of manufacturing a transistor, the method comprising:
 forming a GeSiSn base region;   forming an emitter region; and   forming a collector region,   wherein:
 the transistor is a NPN heterojunction bipolar transistor; and 
 the GeSiSn base region comprises a Sn content and a Si content to be latticed matched or coherently strained to GaAs. 
   
     
     
         2 . The method of  claim 1 , further comprising wafer bonding the collector region comprising a GaN collector region to the GeSiSn base region. 
     
     
         3 . The method of  claim 1 , further comprising wafer bonding the collector region comprising a SiC collector region to the GeSiSn base region. 
     
     
         4 . The method of  claim 1 , wherein the emitter region comprises GaAs. 
     
     
         5 . The method of  claim 1 , wherein the emitter region comprises InGaP. 
     
     
         6 . The method of  claim 1 , wherein the emitter region comprises AlGaAs. 
     
     
         7 . The method of  claim 2 , wherein the GaN collector region comprises a cubic GaN or wurtzite GaN. 
     
     
         8 . The method of  claim 3 , wherein the SiC collector region comprises one of: a 3C SiC or 4H SiC or 6H SiC. 
     
     
         9 . A method of manufacturing a transistor, the method comprising:
 forming a GeSi base region;   forming an emitter region; and   forming a collector region,   wherein:
 the transistor is a NPN heterojunction bipolar transistor; and 
 the GeSi base region comprises a Si content to be latticed matched or coherently strained to GaAs. 
   
     
     
         10 . The method of  claim 9 , further comprising wafer bonding the collector region comprising a GaN collector region to the GeSi base region. 
     
     
         11 . The method of  claim 9 , further comprising wafer bonding the collector region comprising a SiC collector region to the GeSi base region. 
     
     
         12 . The method of  claim 9 , wherein the emitter region comprises GaAs. 
     
     
         13 . The method of  claim 9 , wherein the emitter region comprises InGaP. 
     
     
         14 . The method of  claim 9 , wherein the emitter region comprises AlGaAs. 
     
     
         15 . The method of  claim 10 , wherein the GaN collector region comprises a cubic GaN or wurtzite GaN. 
     
     
         16 . The method of  claim 11 , wherein the SiC collector region comprises one of: a 3C SiC or 4H SiC or 6H SiC. 
     
     
         17 . A method of manufacturing a transistor, the method comprising:
 forming a GaAs base region;   forming an InGaP emitter region;   forming a GaAs emitter cap region;   forming an emitter base stack, wherein the emitter base stack comprises the GaAs emitter cap region, the InGaP emitter region, and the GaAs base region; and   forming a collector region,   wherein:
 the transistor is a NPN heterojunction bipolar transistor; 
 the InGaP emitter region comprises one of: an ordered phase or disordered phase or mixed phase; 
 the InGaP emitter region is lattice matched or near latticed matched to GaAs; and 
 the GaAs base region is wafer bonded to the collector region. 
   
     
     
         18 . The method of  claim 17 , further comprising wafer bonding the collector region comprising a GaN collector region to the GaAs base region. 
     
     
         19 . The method of  claim 17 , further comprising wafer bonding the collector region comprising a SiC collector region to the GaAs base region. 
     
     
         20 . The method of  claim 17 , wherein the GaAs base region to the InGaP emitter region has a conduction band offset less than 0.2 eV.