Substrate Processing Apparatus

Abstract

Described herein is a technique capable of capable of uniformly processing a surface of a substrate even when an inductive coupling type substrate processing apparatus is used. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber in which a substrate is processed; a gas supply part configured to supply a gas into the process chamber; a high frequency power supply part configured to supply a high frequency power; a plasma generator including a resonance coil wound on a side of the process chamber, the plasma generator configured to generate a plasma in the process chamber when the high frequency power is supplied to the resonance coil; and a substrate support on which the substrate is placed such that a horizontal center position of the substrate in the process chamber does not overlap with a horizontal center position of the resonance coil.

What is claimed is: 
     
         1 . A substrate processing apparatus comprising:
 a process chamber in which a substrate is processed;   a gas supply part configured to supply a gas into the process chamber;   a plasma generator configured to generate a plasma in the process chamber when a high frequency power is supplied to a resonance coil; and   a substrate support on which the substrate is placed.