Plasma processing apparatus

Abstract

A plasma processing apparatus includes an electrostatic chuck, a connection surface being provided at a periphery of the electrostatic chuck; an edge adjustment ring, arranged around the electrostatic chuck in a circumferential direction, an inner wall of the edge adjustment ring being opposite to an outer wall of the electrostatic chuck; and an edge ring, arranged around the electrostatic chuck and above the connection surface, and located above the edge adjustment ring. The edge adjustment ring includes an annular body and an annular protrusion protruding toward the edge ring, and the annular body is relatively close to the electrostatic chuck.

1 . A plasma processing apparatus, comprising:
 an electrostatic chuck, wherein a connection surface is provided at a periphery of the electrostatic chuck;   an edge adjustment ring, arranged around the electrostatic chuck in a circumferential direction, wherein an inner wall of the edge adjustment ring is opposite to an outer wall of the electrostatic chuck; and   an edge ring, arranged around the electrostatic chuck and above the connection surface, and located above the edge adjustment ring,   wherein the edge adjustment ring comprises an annular body and an annular protrusion protruding toward the edge ring, and the annular body is relatively close to the electrostatic chuck.   
     
     
         2 . The plasma processing apparatus of  claim 1 , wherein the edge adjustment ring further comprises:
 grooves recessed in a direction away from the edge ring, and located at a surface of the annular body relatively close to the edge ring and between the annular protrusion and the electrostatic chuck.   
     
     
         3 . The plasma processing apparatus of  claim 2 , further comprising:
 a first thermally conductive structure, located between the annular body and the edge ring, configured to bond the edge adjustment ring and the edge ring, and further configured to transfer heat between the annular body and the edge ring.   
     
     
         4 . The plasma processing apparatus of  claim 3 , wherein
 the first thermally conductive structure partially fills in the grooves, such that there are gaps between a bottom of the first thermally conductive structure and bottoms of the grooves, and volume of a gap is smaller than that of a groove.   
     
     
         5 . The plasma processing apparatus of  claim 1 , further comprising:
 a cooling assembly, located below the electrostatic chuck and configured to cool the electrostatic chuck; and   a second thermally conductive structure, located in the annular body and in contact with the cooling assembly, and configured to conduct heat to the cooling assembly.   
     
     
         6 . The plasma processing apparatus of  claim 5 , wherein the plasma processing apparatus comprises:
 a plurality of second thermally conductive structures, located in the annular body and disposed at equal intervals in a circumferential direction of the annular body.   
     
     
         7 . The plasma processing apparatus of  claim 5 , further comprising:
 a first temperature sensing unit, located in the edge adjustment ring, and configured to measure a temperature of the edge adjustment ring to obtain a first measurement result; and   a second temperature sensing unit, located in a cavity of the plasma processing apparatus, and configured to measure a temperature in the plasma processing apparatus to obtain a second measurement result, wherein the cavity is configured to accommodate the electrostatic chuck, the edge adjustment ring, and the edge ring.   
     
     
         8 . The plasma processing apparatus of  claim 7 , further comprising:
 a temperature control structure, electrically connected to the first temperature sensing unit and the second temperature sensing unit, and configured to control the temperature of the edge adjustment ring according to the first measurement result and the second measurement result.   
     
     
         9 . The plasma processing apparatus of  claim 8 , further comprising:
 a reminder structure, electrically connected to the first temperature sensing unit and the second temperature sensing unit, and configured to output, in response to an absolute value of a difference between the first measurement result and the second measurement result being greater than a preset threshold, an indication signal indicating that a temperature of the plasma processing apparatus is abnormal.   
     
     
         10 . The plasma processing apparatus of  claim 8 , further comprising: a transmission structure and a data analysis structure, wherein
 the transmission structure is electrically connected to the temperature control structure and the data analysis structure, and configured to receive data generated during temperature adjustment and sent by the temperature control structure, and transmit the data to the data analysis structure; and   the data analysis structure is configured to analyze the data received to obtain an analysis result.   
     
     
         11 . The plasma processing apparatus of  claim 1 , further comprising:
 a base, arranged around the electrostatic chuck in the circumferential direction, wherein the edge adjustment ring is located between the base and the edge ring.   
     
     
         12 . The plasma processing apparatus of  claim 11 , wherein a pull rod is provided in the base and configured to fix the edge adjustment ring. 
     
     
         13 . The plasma processing apparatus of  claim 1 , wherein
 the electrostatic chuck further has a top surface on a side of the electrostatic chuck where the connection surface is provided;   in a direction perpendicular to the electrostatic chuck, the top surface of the electrostatic chuck is relatively distant from the edge adjustment ring, and the connection surface is relatively close to the edge adjustment ring;   a part of the edge ring in contact with the connection surface is provided with a stepped surface; and   in the direction perpendicular to the electrostatic chuck, the top surface of the electrostatic chuck is relatively distant from the edge adjustment ring, and the stepped surface is relatively close to the edge adjustment ring.   
     
     
         14 . The plasma processing apparatus of  claim 13 , wherein
 a height difference between the stepped surface and the top surface in the direction perpendicular to the electrostatic chuck ranges from 0.004 feet to 0.012 feet.   
     
     
         15 . The plasma processing apparatus of  claim 1 , wherein the edge adjustment ring is made of ceramic.