Semiconductor device and manufacturing method of semiconductor device

Abstract

A method of manufacturing a semiconductor device includes: forming a first stack structure; forming first holes penetrating the first stack structure; forming a second stack structure on the first stack structure; forming second holes penetrating the second stack structure; measuring first direction distances between edges of the first holes and edges of the second holes; and correcting a first direction position at which the second holes are to be formed. The second holes may include one of a first shift hole shifted in a positive first direction from a first hole and a second shift hole shifted in a negative first direction from a first hole.

What is claimed is: 
     
         1 . A semiconductor device comprising:
 a first stack structure;   a plurality of first holes penetrating the first stack structure;   a second stack structure located on the first stack structure;   a first shift hole penetrating the second stack structure, the first shift hole being shifted in a positive first direction from a first hole among the plurality of first holes; and   a second shift hole penetrating the second stack structure, the second shift hole being shifted in a negative first direction from a first hole among the plurality of first holes.   
     
     
         2 . The semiconductor device of  claim 1 , further comprising:
 a third shift hole penetrating the second stack structure, the third shift hole being shifted in a positive second direction from a first hole among the plurality of first holes; and   a fourth shift hole penetrating the second stack structure, the fourth shift hole being shifted in a negative second direction from a first hole among the plurality of first holes.   
     
     
         3 . The semiconductor device of  claim 1 , further comprising a non-shift hole penetrating the second stack structure, the non-shift hole being aligned with a first hole among the plurality of first holes. 
     
     
         4 . The semiconductor device of  claim 1 , further comprising:
 a first cell stack structure;   first channel structures penetrating the first cell stack structure;   a second cell structure on the first cell stack structure; and   second channel structures penetrating the second cell structure.