Device, system, and method for qubit calibration, measurement and control

Abstract

The present disclosure relates to a qubit calibration device and a qubit measurement and control method. The qubit calibration device includes a qubit processing unit including circuitry configured to, after receiving a qubit control signal, process one or more qubits; and an adjustable device configured to, after receiving the qubit control signal, generate a detection signal used to further adjust the qubit control signal, wherein the qubit processing unit and the adjustable device are disposed on a same substrate.

1 . A qubit calibration device, comprising:
 a qubit processing unit including circuitry configured to, after receiving a qubit control signal, process one or more qubits; and   an adjustable device configured to, after receiving the qubit control signal, generate a detection signal used to further adjust the qubit control signal, wherein the qubit processing unit and the adjustable device are disposed on a same substrate.   
     
     
         2 . The qubit calibration device according to  claim 1 , wherein
 the one or more qubits are based on a superconducting Josephson junction.   
     
     
         3 . The qubit calibration device according to  claim 1 , further comprising: a first mode selection device located on one side of the qubit processing unit and disposed on the same substrate. 
     
     
         4 . The qubit calibration device according to  claim 3 , further comprising: a second mode selection device located on the other side of the qubit processing unit from the first mode selection device, and the second mode selection device being disposed on the same substrate. 
     
     
         5 . The qubit calibration device according to  claim 1 , wherein the qubit control signal comprises a microwave signal or a laser signal. 
     
     
         6 . The qubit calibration device according to  claim 1 , wherein the qubit control signal is adjusted by at least one of the parameters including phase, intensity, and frequency. 
     
     
         7 . The qubit calibration device according to  claim 1 , wherein
 the substrate is disposed in a low-temperature environment comprising a liquid helium temperature zone.   
     
     
         8 . The qubit calibration device according to  claim 1 , wherein the substrate is a single chip or a printed circuit board (PCB). 
     
     
         9 . A qubit measurement and control method, comprising:
 receiving a qubit control signal at an adjustable device;   detecting, by the adjustable device, the qubit control signal to obtain a detection signal,   wherein the qubit control signal is adjusted based on a comparison between the detection signal and the qubit control signal.   
     
     
         10 . The qubit measurement and control method according to  claim 9 , wherein
 the qubit control signal comprises a microwave signal or a laser signal.   
     
     
         11 . The qubit measurement and control method according to  claim 9 , wherein
 the qubit control signal is adjusted by at least one of the following parameters: phase, intensity, and frequency.   
     
     
         12 . The qubit measurement and control method according to  claim 9 , wherein
 the detection signal is transmitted to a control device via a reflection mode or a through mode.