Semiconductor memory device

Abstract

A semiconductor memory device includes a capacitor on a substrate. The capacitor includes a first electrode, a second electrode on the first electrode, and a dielectric layer between the first electrode and the second electrode. The second electrode includes a first layer, a second layer, and a third layer. The first layer is adjacent to the dielectric layer, and the third layer is spaced apart from the first layer with the second layer interposed therebetween. A concentration of nickel in the third layer is higher than a concentration of nickel in the first layer.

What is claimed is: 
     
         1 . A semiconductor device comprising:
 a substrate;   a first electrode on the substrate;   a dielectric insulating film on the first electrode; and   a second electrode on the dielectric insulating film, the second electrode including a first layer,   wherein the first electrode is pillar-shaped and includes titanium nitride (TiN) and silicon (Si),   the dielectric insulating film includes hafnium (Hf), zirconium (Zr) and aluminum (Al), and   the first layer of the second electrode includes nickel (Ni).   
     
     
         2 . The semiconductor device of  claim 1 , wherein the dielectric insulating film includes at least one of silicon (Si), titanium (Ti), lanthanum (La), or tantalum (Ta). 
     
     
         3 . The semiconductor device of  claim 1 , wherein the dielectric insulating film includes silicon (Si). 
     
     
         4 . The semiconductor device of  claim 1 , wherein the dielectric insulating film includes titanium (Ti). 
     
     
         5 . The semiconductor device of  claim 1 , wherein the dielectric insulating film includes silicon (Si) and titanium (Ti). 
     
     
         6 . The semiconductor device of  claim 1 , wherein the second electrode includes a second layer between the dielectric insulating film and the first layer of the second electrode, and a third layer between the second layer of the second electrode and the first layer of the second electrode,
 the second layer of the second electrode includes titanium nitride (TiN), and   the third layer of the second electrode includes nickel (Ni), titanium (Ti) and nitrogen (N).   
     
     
         7 . The semiconductor device of  claim 1 , further comprises a metal oxide film between the dielectric insulating film and the second electrode,
 wherein the metal oxide film includes titanium oxide (TiO).   
     
     
         8 . The semiconductor device of  claim 1 , wherein the second electrode includes titanium nitride (TiN). 
     
     
         9 . A semiconductor device comprising:
 a substrate;   a first electrode on the substrate;   a dielectric insulating film on the first electrode;   a metal oxide film on the dielectric insulating film; and   a second electrode on the dielectric insulating film,   wherein the first electrode includes titanium nitride (TiN),   the dielectric insulating film includes hafnium (Hf), zirconium (Zr) and aluminum (Al), and   the second electrode includes a titanium nitride (TiN) layer and a nickel (Ni) layer.   
     
     
         10 . The semiconductor device of  claim 9 , wherein the first electrode is pillar-shaped and includes silicon (Si). 
     
     
         11 . The semiconductor device of  claim 9 , wherein the metal oxide film includes titanium oxide (TiO). 
     
     
         12 . The semiconductor device of  claim 9 , wherein the dielectric insulating film includes at least one of silicon (Si), titanium (Ti), lanthanum (La), or tantalum (Ta). 
     
     
         13 . The semiconductor device of  claim 9 , wherein the dielectric insulating film includes silicon (Si). 
     
     
         14 . The semiconductor device of  claim 9 , wherein the dielectric insulating film includes titanium (Ti). 
     
     
         15 . The semiconductor device of  claim 9 , wherein the dielectric insulating film includes silicon (Si) and titanium (Ti). 
     
     
         16 . The semiconductor device of  claim 9 , wherein the second electrode includes a layer between the titanium nitride (TiN) layer and the nickel (Ni) layer of the second electrode, and
 the layer of the second electrode includes nickel (Ni), titanium (Ti) and nitrogen (N).   
     
     
         17 . A semiconductor device comprising:
 a substrate;   a first electrode on the substrate;   a dielectric insulating film on the first electrode;   a metal oxide film on the dielectric insulating film; and   a second electrode on the dielectric insulating film,   wherein the first electrode is pillar-shaped and includes titanium nitride (TiN), the dielectric insulating film includes hafnium (Hf), zirconium (Zr) and aluminum (Al),   the metal oxide film includes titanium oxide (TiO), and   the second electrode includes a titanium nitride (TiN) layer and a layer including at least one of nickel (Ni), titanium (Ti), or nitrogen (N).   
     
     
         18 . The semiconductor device of  claim 17 , wherein the first electrode includes silicon 
     
     
         19 . The semiconductor device of  claim 17 , wherein the dielectric insulating film includes at least one of silicon (Si), titanium (Ti), lanthanum (La), or tantalum (Ta). 
     
     
         20 . The semiconductor device of  claim 17 , wherein the dielectric insulating film includes silicon (Si) and titanium (Ti).