Deposition apparatus and deposition method using the same

Abstract

A deposition apparatus including a gas supply unit, including: a first process gas supply unit blowing a first process gas onto a deposition-target surface; a second process gas supply unit blowing a second process gas different from the first process gas onto the deposition-target surface of the substrate; and air curtain units blocking an area between an area where the process gas is blown and an area where the second process gas is blown, by blowing an inert gas.

What is claimed is: 
     
         1 . A deposition apparatus, comprising:
 a deposition chamber;   a susceptor configured for supporting a substrate in the deposition chamber; and   a gas supply unit configured for supplying a process gas to the substrate,   wherein the gas supply unit comprises:
 a first process gas supply unit configured for blowing a first process gas onto a deposition-target surface; 
 a second process gas supply unit configured for blowing a second process gas different from the first process gas onto the surface of the substrate; and 
 air curtain units configured to blow an inert gas for blocking a first area disposed between a second area where the first process gas is blown and a third area where the second process gas is blown. 
   
     
     
         2 . The deposition apparatus of  claim 1 , wherein the gas supply unit further comprises:
 a first exhaust unit configured to form a circulation path for the first process gas between the deposition-target surface of the substrate and the first process supply unit by withdrawing the first process gas; and   a second exhaust unit configured to form a circulation path for the second process gas between the deposition-target surface of the substrate and the second process gas supply unit by withdrawing the second process gas.   
     
     
         3 . The deposition apparatus of  claim 2 , wherein a distance between the gas supply unit and the deposition-target surface of the substrate is in a range of 1.5 mm to 4 mm. 
     
     
         4 . The deposition apparatus of  claim 1 , wherein the susceptor is configured to perform a reciprocating motion in the deposition chamber, having the gas supply unit at a center thereof. 
     
     
         5 . The deposition apparatus of  claim 4 , wherein the deposition chamber comprises extra areas sufficient for the deposition-target surface of the substrate to pass an entire area comprising the first process gas supply unit and the second process gas supply unit. 
     
     
         6 . The deposition apparatus of  claim 1 , wherein:
 the first process gas comprises a mixture forming a nitride film on the deposition-target surface of the substrate; and   the second process gas comprises a mixture forming an oxide film on the deposition-target surface of the substrate.   
     
     
         7 . The deposition apparatus of  claim 1 , wherein:
 the first process gas comprises a mixture forming an inorganic layer on the substrate; and   the second process gas comprises a mixture forming an organic layer on the substrate.   
     
     
         8 . The deposition apparatus of  claim 1 , wherein:
 the first process gas comprises an atomic layer reaction source to be absorbed by the substrate; and   the second process gas comprises an atomic layer reaction gas to cause a film-formation reaction with the absorbed reaction source.   
     
     
         9 . The deposition apparatus of  claim 8 , wherein the inert gas also purges extra reaction source overlaid on and absorbed by an atomic layer formed by the film-forming reaction. 
     
     
         10 . The deposition apparatus of  claim 1 , wherein:
 the first process gas comprises source to form a film on the substrate; and   the second process gas comprises surface treatment gas to reform a thin film made of the first process gas.