Image sensor

Abstract

An image sensor includes at least one image cell having a photodiode disposed in a substrate, a charge storage region disposed in the substrate to be spaced apart from the photodiode, a transfer gate electrode disposed on a channel region between the photodiode and the charge storage region to transfer a charge from the photodiode to the charge storage region, and a dummy pattern disposed on the substrate and configured to inhibit light from being introduced into the charge storage region from an adjacent image cell.

What is claimed is: 
     
         1 . An image sensor comprising:
 a plurality of image cells, at least one image cell of the plurality of image cells comprising:
 a photodiode disposed in a substrate; 
 a charge storage region disposed in the substrate to be spaced apart from the photodiode; 
 a transfer gate electrode disposed on a channel region between the photodiode and the charge storage region to transfer a charge from the photodiode to the charge storage region; and 
 a dummy pattern disposed on the substrate and configured to inhibit light from being introduced into the charge storage region from an adjacent image cell of the plurality of image cells. 
   
     
     
         2 . The image sensor of  claim 1 , wherein the dummy pattern is disposed on a surface portion of the substrate between the charge storage region and a photodiode of the adjacent image cell and is made of the same material as the transfer gate electrode. 
     
     
         3 . The image sensor of  claim 1 , wherein the dummy pattern comprises polysilicon. 
     
     
         4 . The image sensor of  claim 1 , wherein the at least one image cell further comprises:
 an insulating layer disposed on the substrate, the transfer gate electrode, and the dummy pattern; and   a light shield layer disposed on the insulating layer and configured to inhibit light from entering the charge storage region.   
     
     
         5 . The image sensor of  claim 4 , wherein the at least one image cell further comprises:
 a light shield pattern disposed between the dummy pattern and the light shield layer and configured to pass through the insulating layer.   
     
     
         6 . The image sensor of  claim 5 , wherein the at least one image cell further comprises:
 a second light shield pattern extending from a first edge portion of the light shield layer adjacent to the adjacent image cell toward the substrate.   
     
     
         7 . The image sensor of  claim 6 , wherein the insulating layer comprises:
 a first oxide layer disposed on the substrate, the transfer gate electrode, and the dummy pattern;   a nitride layer disposed on the first oxide layer; and   a second oxide layer disposed on the nitride layer,   wherein the second light shield pattern is configured to pass through the second oxide layer.   
     
     
         8 . The image sensor of  claim 6 , wherein the at least one image cell further comprises:
 an anti-reflective layer disposed between the substrate and the insulating layer,   wherein the second light shield pattern is configured to pass through the insulating layer.   
     
     
         9 . The image sensor of  claim 5 , wherein the at least one image cell further comprises:
 a third light shield pattern extending from a second edge portion of the light shield layer adjacent to the photodiode toward the substrate.   
     
     
         10 . The image sensor of  claim 5 , wherein the at least one image cell further comprises:
 a second light shield pattern disposed between the dummy pattern and the light shield layer and configured to pass through the insulating layer.   
     
     
         11 . The image sensor of  claim 4 , wherein the at least one image cell further comprises:
 a light shield pattern disposed between the dummy pattern and a first edge portion of the light shield layer adjacent to the adjacent image cell and configured to pass through the insulating layer.   
     
     
         12 . The image sensor of  claim 4 , wherein the at least one image cell further comprises:
 a second insulating layer disposed on the insulating layer and the light shield layer;   interlayer insulating layers disposed on the second insulating layer;   metal wiring layers disposed among the interlayer insulating layers; and   a light guide pattern passing through the interlayer insulating layers and corresponding to the photodiode.   
     
     
         13 . The image sensor of  claim 12 , wherein the at least one image cell further comprises:
 an etch stop layer disposed on the second insulating layer,   wherein the light guide pattern is disposed on the etch stop layer.   
     
     
         14 . The image sensor of  claim 1 , wherein the at least one image cell further comprises:
 an isolation region disposed in a surface portion of the substrate between the charge storage region and a photodiode of the adjacent image cell.   
     
     
         15 . The image sensor of  claim 14 , wherein the dummy pattern is disposed on the isolation region. 
     
     
         16 . The image sensor of  claim 14 , wherein the dummy pattern comprises a lower pattern disposed in the isolation region, and an upper pattern disposed on the lower pattern. 
     
     
         17 . The image sensor of  claim 1 , wherein the at least one image cell further comprises:
 a second dummy pattern disposed on the charge storage region and configured to inhibit light from entering the charge storage region; and   an insulating layer disposed between the charge storage region and the second dummy pattern and configured to electrically insulate the charge storage region from the second dummy pattern.   
     
     
         18 . The image sensor of  claim 17 , wherein the second dummy pattern is made of a same material as the dummy pattern. 
     
     
         19 . An image sensor comprising:
 a photodiode disposed in a substrate;   a charge storage region disposed in the substrate to be spaced apart from the photodiode;   a transfer gate electrode disposed on a channel region between the photodiode and the charge storage region to transfer a charge from the photodiode to the charge storage region;   a light absorption pattern disposed on the substrate and configured to absorb light directed to the charge storage region from an adjacent image cell; and   a light reflection pattern disposed on the light absorption pattern and configured to reflect the light.   
     
     
         20 . An image sensor comprising:
 a plurality of image cells, at least one image cell of the plurality of image cells comprising:
 a photodiode disposed in a substrate; 
 a charge storage region disposed in the substrate to be spaced apart from the photodiode; 
 a transfer gate electrode disposed on a channel region between the photodiode and the charge storage region to transfer a charge from the photodiode to the charge storage region; 
 an isolation region disposed in a surface portion of the substrate between the charge storage region and a photodiode of an adjacent image cell of the plurality of image cells; 
 an insulating layer disposed on the substrate; 
 a light shield layer disposed on the insulating layer and configured to inhibit light from entering the charge storage region; 
 a first light shield pattern disposed between an edge portion of the light shield layer and an edge portion of the photodiode of the adjacent image cell and configured to inhibit light from entering the charge storage region from the adjacent image cell; and 
 a second light shield pattern disposed between the light shield layer and the isolation region and configured to inhibit light from entering the charge storage region from the adjacent image cell. 
   
     
     
         21 . The image sensor of  claim 20 , wherein the at least one image cell further comprises:
 an anti-reflective layer disposed between the substrate and the insulating layer,   wherein the first light shield pattern and the second light shield pattern pass through the insulating layer and are disposed on the anti-reflective layer.   
     
     
         22 . The image sensor of  claim 20 , wherein the insulating layer comprises:
 a first oxide layer disposed on the substrate;   a nitride layer disposed on the first oxide layer; and   a second oxide layer disposed on the nitride layer,   wherein the first light shield pattern and the second light shield pattern pass through the second oxide layer and are disposed on the nitride layer.   
     
     
         23 . An image sensor comprising:
 a plurality of image cells, at least one image cell of the plurality of image cells comprising:
 a photodiode disposed in a substrate; 
 a charge storage region disposed in the substrate to be spaced apart from the photodiode; 
 a transfer gate electrode disposed on a channel region between the photodiode and the charge storage region to transfer a charge from the photodiode to the charge storage region; 
 an isolation region disposed in a surface portion of the substrate between the charge storage region and a photodiode of an adjacent image cell of the plurality of image cells; 
 an insulating layer disposed on the substrate; 
 a light shield layer disposed on the insulating layer and configured to inhibit light from entering the charge storage region; and 
 a light shield pattern disposed between the substrate and the light shield layer and configured to inhibit light from entering the charge storage region from the adjacent image cell. 
   
     
     
         24 . The image sensor of  claim 23 , wherein a portion of the light shield pattern is disposed between the light shield layer and an edge portion of the photodiode of the adjacent image cell, and another portion of the light shield pattern is disposed between the light shield layer and the isolation region. 
     
     
         25 . The image sensor of  claim 23 , wherein the at least one image cell further comprises:
 an anti-reflective layer disposed between the substrate and the insulating layer,   wherein the light shield pattern passes through the insulating layer and is disposed on the anti-reflective layer.   
     
     
         26 . The image sensor of  claim 23 , wherein the insulating layer comprises:
 a first oxide layer disposed on the substrate;   a nitride layer disposed on the first oxide layer; and   a second oxide layer disposed on the nitride layer,   wherein the light shield pattern passes through the second oxide layer and is disposed on the nitride layer.