Compact emitter design for a vertical-cavity surface-emitting laser

Abstract

A surface emitting laser may include an isolation layer including a first center portion and a first plurality of outer portions extending from the first center portion, and a metal layer including a second center portion and a second plurality of outer portions extending from the second center portion. The metal layer may be formed on the isolation layer such that a first outer portion, of the second plurality of outer portions, is formed over one of the first plurality of outer portions. The surface emitting laser may include a passivation layer including a plurality of openings. An opening may be formed over the first outer portion. The surface emitting laser may include a plurality of oxidation trenches. An oxidation trench may be positioned at least partially between the first outer portion and a second outer portion of the second plurality of outer portions.

1 - 20 . (Canceled) 
     
     
         21 . A vertical cavity surface emitting laser (VCSEL) array, comprising:
 a plurality of VCSELs, each of the plurality of VCSELs having a diameter;
 wherein a pitch between two adjacent VCSELs, of the plurality of VCSELs, is less than the diameter of each of the two adjacent VCSELs. 
   
     
     
         22 . The VCSEL array of  claim 21 , wherein each diameter, of the plurality of VCSELs, is inclusive of an oxidation trench. 
     
     
         23 . The VCSEL array of  claim 21 , further comprising:
 oxidation trenches interdigitized with extended portions along an outer perimeter of an isolation layer of at least one of the plurality of VCSELs.   
     
     
         24 . The VCSEL array of  claim 23 , wherein the extended portions along the outer perimeter of the isolation layer are shaped as a cog wheel shape. 
     
     
         25 . The VCSEL array of  claim 23 , further comprising:
 a metal layer formed on the isolation layer.   
     
     
         26 . The VCSEL array of  claim 25 , wherein a radius, associated with the isolation layer, is less than or equal to a radius associated with the metal layer. 
     
     
         27 . The VCSEL array of  claim 21 , further comprising:
 a dielectric via opening formed on a dielectric layer of at least one of the plurality of VCSELs,
 wherein the dielectric via opening includes a plurality of connected dielectric via opening portions. 
   
     
     
         28 . The VCSEL array of  claim 27 , wherein the plurality of connected dielectric via opening portions are connected via at least one arcuate segment between two or more oxidation trenches. 
     
     
         29 . The VCSEL array of  claim 27 , wherein the plurality of connected dielectric via opening portions form a full ring-shape. 
     
     
         30 . The VCSEL array of  claim 27 , wherein the plurality of connected dielectric via opening portions form a partial ring-shape. 
     
     
         31 . The VCSEL array of  claim 21 , wherein at least one of the plurality of VCSELs comprises:
 an optical aperture to emit a laser beam; and   an oxidation aperture formed by an oxidation layer.   
     
     
         32 . The VCSEL array of  claim 31 , wherein the oxidation layer is located below the optical aperture. 
     
     
         33 . The VCSEL array of  claim 31 , wherein, for the at least one of the plurality of VCSELs, an oxidation trench includes one or more openings that allow oxygen to access an epitaxial layer from which the oxidation layer is formed. 
     
     
         34 . The VCSEL array of  claim 21 , further comprising:
 a passivation layer that includes a plurality of openings,
 wherein a metal layer is located in each of the plurality of openings. 
   
     
     
         35 . The VCSEL array of  claim 21 , further comprising at least one oxidation trench formed in an irregular shape. 
     
     
         36 . The VCSEL array of  claim 21 , wherein the VCSEL array is a non-grid VCSEL array. 
     
     
         37 . An emitter array, comprising:
 a first emitter; and   a second emitter, adjacent to the first emitter,
 wherein a distance from a center of the first emitter to a center of the second emitter is less than a first diameter of the first emitter and less than a second diameter of the second emitter. 
   
     
     
         38 . The emitter array of  claim 37 , further comprising:
 oxidation trenches interdigitized with extended portions along an outer perimeter of an isolation layer of at least one of the first emitter or the second emitter.   
     
     
         39 . The emitter array of  claim 38 , wherein the oxidation trenches are irregularly shaped. 
     
     
         40 . The emitter array of  claim 37 , wherein the first emitter and the second emitter are vertical cavity surface emitting lasers (VCSELs).