Insulating film, method for manufacturing semiconductor device, and semiconductor device

Abstract

In a semiconductor device including a transistor including an oxide semiconductor film and a protective film over the transistor, an oxide insulating film containing oxygen in excess of the stoichiometric composition is formed as the protective film under the following conditions: a substrate placed in a treatment chamber evacuated to a vacuum level is held at a temperature higher than or equal to 180° C. and lower than or equal to 260° C.; a source gas is introduced into the treatment chamber so that the pressure in the treatment chamber is set to be higher than or equal to 100 Pa and lower than or equal to 250 Pa; and a high-frequency power higher than or equal to 0.17 W/cm2 and lower than or equal to 0.5 W/cm2 is supplied to an electrode provided in the treatment chamber.

1 . A method for manufacturing a semiconductor device, comprising the step of holding a substrate placed in a treatment chamber at a first temperature, introducing a source gas into the treatment chamber, and supplying a high-frequency power to an electrode in the treatment chamber so that an insulating film is formed over the substrate,
 wherein the first temperature is higher than or equal to 180° C. and lower than or equal to 260° C.,   wherein a pressure in the treatment chamber is set to be higher than or equal to 100 Pa and lower than or equal to 250 Pa when the source gas is introduced, and   wherein the high-frequency power is higher than or equal to 0.17 W/cm 2  and lower than or equal to 0.5 W/cm 2 .