Electronic atomization device, atomization assembly, atomization element and manufacturing method therefor

Abstract

A vaporization element of an electronic vaporization device includes: a porous substrate; and a heating layer. The porous substrate includes a vaporization surface and the heating layer covers the vaporization surface. The heating layer includes a conductive layer and a stabilizing layer, the conductive layer covers the vaporization surface, and the stabilizing layer covers a surface of the conductive layer far from the porous substrate. A resistivity of the stabilizing layer is higher than a resistivity of the conductive layer. An oxidation resistance of the stabilizing layer is lower than an oxidation resistance of the conductive layer.

What is claimed is: 
     
         1 . A vaporization element of an electronic vaporization device, the vaporization element comprising:
 a porous substrate; and   a heating layer,   wherein the porous substrate comprises a vaporization surface and the heating layer covers the vaporization surface,   wherein the heating layer comprises a conductive layer and a stabilizing layer, the conductive layer covers the vaporization surface, and the stabilizing layer covers a surface of the conductive layer far from the porous substrate,   wherein a resistivity of the stabilizing layer is higher than a resistivity of the conductive layer, and   wherein an oxidation resistance of the stabilizing layer is lower than an oxidation resistance of the conductive layer.   
     
     
         2 . The vaporization element of  claim 1 , wherein a material of the stabilizing layer comprises at least one of aluminum, zinc, tin, magnesium, or titanium, and
 wherein a material of the conductive layer comprises at least one of titanium, zirconium, niobium, tantalum, or 316 stainless steel.   
     
     
         3 . The vaporization element of  claim 2 , wherein the material of the stabilizing layer comprises aluminum, and
 wherein the material of the conductive layer comprises a titanium-zirconium alloy.   
     
     
         4 . The vaporization element of  claim 1 , wherein a thickness of the heating layer ranges from 1.5 μm to 5 μm,
 wherein a thickness of the stabilizing layer ranges from 0.5 μm to 2 μm, and 
 wherein a thickness of the conductive layer ranges from 2 μm to 3 μm. 
 
     
     
         5 . The vaporization element of  claim 1 , further comprising:
 a first electrode and a second electrode located on the stabilizing layer far from the porous substrate and covering a part of the stabilizing layer.   
     
     
         6 . The vaporization element of  claim 5 , wherein materials of the first electrode and the second electrode comprise silver. 
     
     
         7 . A vaporization assembly of an electronic vaporization device, the vaporization assembly comprising:
 a liquid storage cavity configured to store an e-liquid; and   the vaporization element of  claim 1 ,   wherein the e-liquid in the liquid storage cavity is deliverable to the vaporization surface.   
     
     
         8 . An electronic vaporization device, comprising:
 a power supply assembly; and   the vaporization assembly of  claim 7 ,   wherein the power supply assembly is electrically connected to the vaporization assembly to supply power to the vaporization element of the vaporization assembly.   
     
     
         9 . A manufacturing method for a vaporization element of an electronic vaporization device, the method comprising:
 providing a porous substrate, the porous substrate comprising a vaporization surface;   arranging a conductive layer on the vaporization surface of the porous substrate; and   arranging a stabilizing layer on a surface of the conductive layer far from the porous substrate,   wherein a resistivity of the stabilizing layer is higher than a resistivity of the conductive layer, and   wherein an oxidation resistance of the stabilizing layer is lower than an oxidation resistance of the conductive layer.   
     
     
         10 . The manufacturing method of  claim 9 , wherein arranging the conductive layer on the vaporization surface of the porous substrate comprises arranging the conductive layer on the vaporization surface of the porous substrate using a direct-current sputtering deposition process or a magnetron sputtering deposition process, and/or
 wherein arranging the stabilizing layer on the surface of the conductive layer far from the porous substrate comprises forming the stabilizing layer on one side of the conductive layer far from the porous substrate using the direct-current sputtering deposition process or the magnetron sputtering deposition process.   
     
     
         11 . The manufacturing method of  claim 9 , further comprising:
 arranging a first electrode and a second electrode covering a part of the stabilizing layer on one side of the stabilizing layer far from the porous substrate in a screen-printing manner; and   performing low-temperature sintering on the first electrode and the second electrode.   
     
     
         12 . The manufacturing method of  claim 9 , wherein a total thickness of the stabilizing layer and the conductive layer ranges from 1.5 μm to 5 μm, a thickness of the stabilizing layer ranges from 0.5 μm to 2 μm, and a thickness of the conductive layer ranges from 2 μm to 3 μm, and/or
 wherein a material of the stabilizing layer comprises aluminum, zinc, tin, magnesium, or titanium, and 
 wherein a material of the conductive layer comprises titanium, zirconium, niobium, tantalum, or 316 stainless steel. 
 
     
     
         13 . The manufacturing method of  claim 12 , wherein the material of the stabilizing layer comprises aluminum, and
 wherein the material of the conductive layer comprises a titanium-zirconium alloy.