Manufacturing method of embedded component structure

Abstract

A method for manufacturing an embedded component structure includes providing a circuit board having a through hole and a heat dissipation layer; disposing a chip in the through hole; forming a dielectric layer on a first surface and a second surface of the circuit board to seal the chip and cover a lower surface of the heat dissipation layer; removing a first part of the dielectric layer to form a first opening from which a upper surface of the heat dissipation layer is exposed and a second opening from which the lower surface of the heat dissipation layer is exposed; and forming a thermal conductive material layer in the first and the second opening to form a heat dissipation element surrounding the chip. The upper surface of the heat dissipation layer is exposed from the through hole. The chip, the circuit board, and the heat dissipation element are electrically connected.

What is claimed is: 
     
         1 . A method for manufacturing an embedded component structure, comprising:
 providing a circuit board having a through hole, wherein
 the circuit board has a first surface and a second surface opposite to each other; 
 the circuit board comprises a heat dissipation layer having an upper surface and a lower surface opposite to each other; and 
 the upper surface of the heat dissipation layer is exposed from the through hole; 
   disposing a chip in the through hole;   forming a dielectric layer on the first surface and the second surface to seal the chip and cover the lower surface of the heat dissipation layer;   removing a first part of the dielectric layer to form a first opening from which the upper surface of the heat dissipation layer is exposed and a second opening from which the lower surface of the heat dissipation layer is exposed; and   forming a thermal conductive material layer in the first opening and the second opening to form a heat dissipation element surrounding the chip, wherein the chip, the circuit board, and the heat dissipation element are electrically connected.   
     
     
         2 . The method for manufacturing the embedded component structure according to  claim 1 , wherein
 the heat dissipation element comprises a first part, a second part, and a third part located between the first part and the second part;   the thermal conductive material layer in the first opening is the first part;   the thermal conductive material layer in the second opening is the second part; and   the heat dissipation layer is the third part.   
     
     
         3 . The method for manufacturing the embedded component structure according to  claim 1 , wherein the chip is disposed in the through hole by using an adhesive layer. 
     
     
         4 . The method for manufacturing the embedded component structure according to  claim 1 , wherein a side wall and an active surface of the chip are exposed from the first opening. 
     
     
         5 . The method for manufacturing the embedded component structure according to  claim 4 , wherein the step of exposing, by using the first opening, the side wall and the active surface of the chip comprises:
 after the first part of the dielectric layer is removed, removing a second part of the dielectric layer to expand the first opening to expose a part of the side wall and the active surface of the chip.   
     
     
         6 . The method for manufacturing the embedded component structure according to  claim 5 , wherein the side wall and the active surface of the chip are not exposed after the first part of the dielectric layer is removed. 
     
     
         7 . The method for manufacturing the embedded component structure according to  claim 5 , wherein the second part of the dielectric layer is removed by performing a plasma process and a de-smear process. 
     
     
         8 . The method for manufacturing the embedded component structure according to  claim 1 , wherein the step of removing the first part of the dielectric layer further comprises:
 forming a plurality of vias from which a pad on an active surface of the chip is exposed, and forming the thermal conductive material layer in the plurality of vias to form a plurality of conductive terminals, wherein the plurality of conductive terminals are electrically connected to the circuit board.   
     
     
         9 . The method for manufacturing the embedded component structure according to  claim 8 , wherein the plurality of conductive terminals are columnar structures when viewed from above. 
     
     
         10 . The method for manufacturing the embedded component structure according to  claim 8 , wherein the plurality of conductive terminals further comprises an extension part extending toward an edge of the chip.