Quality Control of High Performance Superconductor Tapes
Abstract
A superconductor tape and method for manufacturing, measuring, monitoring, and controlling same are disclosed. Embodiments are directed to a superconductor tape which includes a superconductor film overlying a buffer layer which overlies a substrate. In one embodiment, the superconductor film is defined as having a c-axis lattice constant higher than 11.74 Angstroms. In another embodiment, the superconductor film comprises BaMO3, where M=Zr, Sn, Ta, Nb, Hf, or Ce, and which has a (101) peak of BaMO3 elongated along an axis that is between 60° to 90° from an axis of the (001) peaks of the superconductor film. These and other embodiments achieve well-aligned nanocolumnar defects and thus a high lift factor, which can result in superior critical current performance of the tape in, for example, high magnetic fields.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A method of measuring a c-axis lattice parameter of a superconductor film in a superconductor tape, the method comprising:
providing a superconductor tape comprising:
a substrate;
a buffer layer overlying the substrate; and
a superconductor film deposited over the buffer layer;
measuring the c-axis lattice parameter of the superconductor film via in-line X-ray Diffraction in real-time subsequent the deposition of the superconductor film over the buffer layer.
2 . The method of claim 1 , wherein the superconductor film is over 10 meters in length.
3 . The method of claim 1 , wherein the superconductor film comprises 5 to 30 mol % of dopant selected from the group consisting of Zr, Sn, Ta, Nb, Hf, Ce, and a combination thereof
4 . The method of claim 1 , wherein the c-axis lattice parameter is a c-axis lattice constant higher than 11.74 Angstroms.
5 . The method of claim 1 , wherein the superconductor film comprises BaMO 3 , where M=Zr, Sn, Ta, Nb, Hf, or Ce, and which has a (101) peak of BaMO3 elongated along an axis that is between 60° to 90° from an axis of the (001) peaks of the superconductor film.
6 . The method of claim 1 , wherein the superconductor film comprises BaMO 3 , where M=Zr, Sn, Ta, Nb, Hf, or Ce, and which has a (101) peak of BaMO 3 located at a 2 theta angle higher than 30° when measured by X-ray Diffraction using copper k alpha radiation.
7 . The method of claim 1 , wherein the superconductor film comprises BaMO3, where M=Zr, Sn, Ta, Nb, Hf, or Ce, and which has a (101) peak of BaMO 3 located at a 2 theta angle less than 2.6° from the (103) peak of the superconductor phase when measured by X-ray Diffraction using copper k alpha radiation.
8 . A method of measuring the (101) X-ray Diffraction peak of BaMO 3 in a superconductor film in a superconductor tape, the method comprising:
providing a superconductor tape comprising:
a substrate;
a buffer layer overlying the substrate; and
a superconductor film deposited over the buffer layer;
wherein the superconductor film comprises BaMO 3 , where M=Zr, Sn, Ta, Nb, Hf, or Ce; and
measuring the (101) X-ray Diffraction peak of BaMO 3 via in-line X-ray Diffraction in real-time subsequent the deposition of the superconductor film over the buffer layer.
9 . The method of claim 8 , wherein the superconductor film is over 10 meters in length.
10 . The method of claim 8 , wherein the superconductor film comprises 5 to 30 mol % of dopant selected from the group consisting of Zr, Sn, Ta, Nb, Hf, Ce, and a combination thereof
11 . The method of claim 8 , wherein the superconductor film is defined as having a c-axis lattice constant higher than 11.74 Angstroms.
12 . The method of claim 8 , wherein the superconductor film comprises BaMO 3 , where M=Zr, Sn, Ta, Nb, Hf, or Ce, and which has a (101) peak of BaMO 3 elongated along an axis that is between 60° to 90° from an axis of the (001) peaks of the superconductor film.
13 . The method of claim 8 , wherein the superconductor film comprises BaMO 3 , where M=Zr, Sn, Ta, Nb, Hf, or Ce, and which has a (101) peak of BaMO 3 located at a 2 theta angle higher than 30° when measured by X-ray Diffraction using copper k alpha radiation.
14 . The method of claim 8 , wherein the superconductor film comprises BaMO 3 , where M=Zr, Sn, Ta, Nb, Hf, or Ce, and which has a (101) peak of BaMO 3 located at a 2 theta angle less than 2.6° from the (103) peak of the superconductor phase when measured by X-ray Diffraction using copper k alpha radiation.
15 . A method of measuring the X-ray Diffraction peak of RE 2 O 3 in a superconductor film in a superconductor tape, the method comprising:
providing a superconductor tape comprising:
a substrate;
a buffer layer overlying the substrate; and
a superconductor film deposited over the buffer layer;
wherein the superconductor film comprises RE 2 O 3 , where RE=rare earth; and
measuring the X-ray Diffraction peak of RE 2 O 3 via in-line X-ray Diffraction in real-time subsequent the deposition of the superconductor film over the buffer layer.
16 . The method of claim 15 , wherein the superconductor film is over 10 meters in length.Join the waitlist — get patent alerts
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