Sensing device and electronic device

Abstract

A sensing device is provided. The sensing device includes a driving substrate, a sensing module, and a plurality of bonding pads. The driving substrate includes a first substrate and a plurality of driving circuits disposed on the first substrate. Each of the driving circuits includes a plurality of thin-film transistors. The sensing module is bonded to the driving substrate, and the sensing module includes a second substrate and a plurality of sensing elements disposed on the second substrate. The sensing module is bonded to the driving substrate through the bonding pads. In addition, each of the driving circuits is electrically connected to at least one of the sensing elements. An electronic device including the sensing device is also provided.

What is claimed is: 
     
         1 . A sensing device, comprising:
 a driving substrate, comprising a first substrate and a plurality of driving circuits disposed on the first substrate, each of the plurality of driving circuits comprising a plurality of thin-film transistors;   a sensing module bonded to the driving substrate, the sensing module comprising a second substrate and a plurality of sensing elements disposed on the second substrate; and   a plurality of bonding pads, wherein the sensing module is bonded to the driving substrate through the plurality of bonding pads;   wherein each of the plurality of driving circuits is electrically connected to at least one of the plurality of sensing elements.   
     
     
         2 . The sensing device as claimed in  claim 1 , wherein the plurality of thin-film transistors comprise a first thin-film transistor and a plurality of second thin-film transistors, the first thin-film transistor is electrically connected to the plurality of sensing elements through the plurality of second thin-film transistors, respectively. 
     
     
         3 . The sensing device as claimed in  claim 2 , wherein the plurality of second thin-film transistors are transfer transistors. 
     
     
         4 . The sensing device as claimed in  claim 1 , wherein at least one of the plurality of sensing elements comprises a semiconductor material, and the semiconductor material comprises indium phosphide (InP), indium antimonide (InSb), indium gallium arsenide (InGaAs), lead sulfide (PbS), lead selenide (PbSe), mercury cadmium telluride (HgCdTe), or a combination thereof. 
     
     
         5 . The sensing device as claimed in  claim 1 , wherein a material of the first substrate comprises glass or polyimide. 
     
     
         6 . The sensing device as claimed in  claim 1 , wherein the second substrate is an epitaxial substrate. 
     
     
         7 . The sensing device as claimed in  claim 1 , wherein the first substrate and the second substrate are curved substrates. 
     
     
         8 . The sensing device as claimed in  claim 1 , comprising a plurality of sensing modules, wherein the plurality of sensing modules are bonded to the driving substrate. 
     
     
         9 . The sensing device as claimed in  claim 1 , wherein the plurality of sensing elements are used for absorbing light in an infrared wavelength range. 
     
     
         10 . The sensing device as claimed in  claim 9 , wherein the infrared wavelength range is greater than or equal to 750 nm and less than or equal to 1500 nm. 
     
     
         11 . The sensing device as claimed in  claim 1 , further comprising a plurality of first electrodes disposed on the driving substrate and a plurality of second electrodes disposed on the sensing module, wherein the plurality of bonding pads are disposed between the plurality of first electrodes and the plurality of second electrodes. 
     
     
         12 . The sensing device as claimed in  claim 1 , wherein a pitch between the plurality of sensing elements is greater than or equal to 10 μm and less than or equal to 30 μm. 
     
     
         13 . An electronic device, comprising:
 a display panel having a display side; and   a sensing device attached to a side of the display panel opposite to the display side, the sensing device comprising:
 a driving substrate, comprising a first substrate and a plurality of driving circuits disposed on the first substrate, each of the plurality of driving circuits comprising a plurality of thin-film transistors; 
 a sensing module bonded to the driving substrate, the sensing module comprising a second substrate and a plurality of sensing elements disposed on the second substrate; and 
 a plurality of bonding pads, wherein the sensing module is bonded to the driving substrate through the plurality of bonding pads; 
   wherein each of the plurality of driving circuits is electrically connected to at least one of the plurality of sensing elements.   
     
     
         14 . The electronic device as claimed in  claim 13 , wherein the display panel comprises a display layer and a light source, and the display layer and the light source do not overlap in a normal direction of the display layer. 
     
     
         15 . The electronic device as claimed in  claim 14 , wherein the light source provides light in an infrared wavelength range. 
     
     
         16 . The electronic device as claimed in  claim 15 , wherein the infrared wavelength range is greater than or equal to 750 nm and less than or equal to 1500 nm. 
     
     
         17 . The electronic device as claimed in  claim 14 , wherein the display panel further comprises a cover plate disposed on the display layer. 
     
     
         18 . The electronic device as claimed in  claim 13 , further comprising an adhesive layer disposed between the display panel and the sensing device. 
     
     
         19 . The electronic device as claimed in  claim 13 , wherein at least one of the plurality of sensing elements comprises a semiconductor material, and the semiconductor material comprises indium phosphide (InP), indium antimonide (InSb), indium gallium arsenide (InGaAs), lead sulfide (PbS), lead selenide (PbSe), mercury cadmium telluride (HgCdTe), or a combination thereof. 
     
     
         20 . The electronic device as claimed in  claim 13 , wherein a material of the first substrate comprises glass or polyimide.