Integrated Memory Comprising Gated Regions Between Charge-Storage Devices and Access Devices

Abstract

Some embodiments include an integrated assembly having an access transistor. The access transistor has a first source/drain region gatedly coupled with a second source/drain region. A digit line is coupled with the first source/drain region. A charge-storage device is coupled with the second source/drain region through an interconnect. The interconnect includes a length of a semiconductor material. A protective transistor gates a portion of the length of the semiconductor material.

1 - 18 . (canceled) 
     
     
         19 . An integrated assembly, comprising:
 a first transistor comprising a first gate and a source/drain region;   an interconnect extending from the source/drain region to a charge-storage device; and   a second transistor comprising a second gate that gates a portion of a length of the interconnect, the second gate electrically coupled to the first gate.   
     
     
         20 . The integrated assembly of  claim 19  wherein the charge-storage device comprises a capacitor. 
     
     
         21 . The integrated assembly of  claim 20  wherein the capacitor comprises an upper node that is not configured as an upwardly-opening container. 
     
     
         22 . The integrated assembly of  claim 20  wherein the capacitor comprises an insulative material configured an upwardly-opening container and an upper node filling an entirety of the upwardly-opening container. 
     
     
         23 . The integrated assembly of  claim 19  wherein the interconnect does not extend vertically. 
     
     
         24 . The integrated assembly of  claim 19  wherein the interconnect comprises a first material over a second material, the second material being different form the first material. 
     
     
         25 . An integrated assembly, comprising:
 a first transistor comprising a source/drain region;   an interconnect extending from the source/drain region and comprising at least:
 one or more of metals; 
 a metal-containing material; or 
 conductively-doped germanium; and 
   a second transistor comprising a gate that gates a portion of the length of the interconnect.   
     
     
         26 . The integrated assembly of  claim 25  wherein the first transistor comprises a first gate and the gate of the second transistor comprises a second gate, the first gate is electrically coupled to the second gate. 
     
     
         27 . The integrated assembly of  claim 25  wherein the one or more of metals comprises titanium, tungsten, cobalt, nickel, platinum or ruthenium. 
     
     
         28 . The integrated assembly of  claim 25  wherein the metal-containing material comprises metal silicide, metal nitride or metal carbide. 
     
     
         29 . The integrated assembly of  claim 25  wherein the interconnect comprises conductively-doped germanium and at least:
 one or more of metals; or 
 a metal-containing material. 
 
     
     
         30 . An integrated assembly, comprising:
 a first transistor comprising a first gate and a source/drain region;   an interconnect comprising a first material and a second material different from the first material, the first material extending from the source/drain region; and   a second transistor comprising a second gate that gates a portion of the interconnect at the second material.   
     
     
         31 . The integrated assembly of  claim 30  wherein the first gate is electrically coupled to the second gate. 
     
     
         32 . The integrated assembly of  claim 30  wherein the second material of the interconnect comprises conductively-doped germanium. 
     
     
         33 . The integrated assembly of  claim 30  wherein the first material of the interconnect comprises at least:
 one or more of metals; or 
 a metal-containing material. 
 
     
     
         34 . The integrated assembly of  claim 30  wherein the second material of the interconnect comprises semiconductor material and the first material comprises at least:
 one or more of metals; or 
 a metal-containing material.