US2022384282A1PendingUtilityA1

Housing for an optoelectronic device,and method for producing same, and lid for a housing

Assignee: SCHOTT AGPriority: Jun 6, 2017Filed: Aug 4, 2022Published: Dec 1, 2022
Est. expiryJun 6, 2037(~10.8 yrs left)· nominal 20-yr term from priority
Inventors:Robert Hettler
H10W 99/00H10W 90/00H10W 76/60H10W 76/18H01L 23/08H01L 31/02325H01L 23/10H01L 31/0203H01L 31/02327H01L 25/167H01L 33/58H01L 33/483H01L 21/4803H10H 20/855H10H 20/8506H10F 55/25H10F 77/413H10F 77/407H10F 77/50
65
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Claims

Abstract

A housing for at least one electronic device includes: a base part including a mounting area for the at least one electronic device; a lid made of glass, the lid made of glass having at least one window integrated therein that is made of a material transparent to infrared radiation; a first mounting area which is arranged under a portion of the lid made of glass; and a second mounting area arranged under the at least one window.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A housing for at least one electronic device, the housing comprising:
 a base part including a mounting area for the at least one electronic device;   a lid made of glass, wherein the lid made of glass has at least one window integrated therein that is made of a material transparent to infrared radiation;   a first mounting area which is arranged under a portion of the lid made of glass; and   a second mounting area arranged under the at least one window.   
     
     
         2 . The housing as claimed in  claim 1 , wherein the at least one window is transparent to at least one of UV radiation or visible light. 
     
     
         3 . The housing as claimed in  claim 1 , wherein the at least one window made of an infrared radiation transparent material is made of silicon, aluminum oxide, in particular sapphire, or germanium. 
     
     
         4 . The housing as claimed in  claim 1 , wherein the lid is made of a glass having a coefficient of mean linear thermal expansion (a) at 20 to 300° C. of 2 to 5 ppm/K. 
     
     
         5 . The housing as claimed in  claim 1 , wherein the at least one window, at 20° C., is under a stress ranging between −100 MPa of compressive stress and +30 MPa of tensile stress. 
     
     
         6 . The housing as claimed in  claim 1 , wherein the lid is made of a glass having a coefficient of mean linear thermal expansion (a) at 20 to 300° C. of 3 to 5 ppm/K and a glass transition temperature (Tg) between 300 and 600° C. 
     
     
         7 . The housing as claimed in  claim 1 , wherein the at least one window has been integrated into the lid by fusing. 
     
     
         8 . The housing as claimed in  claim 1 , wherein the lid is made of borosilicate glass. 
     
     
         9 . A housing for at least one electronic device, the housing comprising:
 a housing base part;   a lid connected to the housing base part and including a window, the lid being comprised of a material transparent to infrared radiation or a glass and the window being comprised of a glass, wherein the glass window is integrated into the lid by fusing, soldering with a solder glass, anodic bonding, or welding.   
     
     
         10 . The housing as claimed in  claim 9 , wherein the glass window is integrated into the lid by anodic bonding. 
     
     
         11 . The housing as claimed in  claim 9 , wherein at 20° C. the glass window is under a stress ranging between −100 MPa of compressive stress and +30 MPa of tensile stress. 
     
     
         12 . The housing as claimed in  claim 9 , wherein the housing is hermetically sealed by the connection of the lid to the housing base part. 
     
     
         13 . The housing as claimed in  claim 9 , wherein the lid is made of silicon, aluminum oxide, sapphire, or germanium. 
     
     
         14 . The housing as claimed in  claim 9 , wherein the glass of the glass window has a coefficient of mean thermal expansion a at 20 to 300° C. of 3 to 5 ppm/K and a glass transition temperature T g  between 300° C. to 600° C. 
     
     
         15 . The housing as claimed in  claim 14 , wherein the glass of the glass window has a coefficient of mean thermal expansion a at 20 to 300° C. of 3 to 4 ppm/K and a glass transition temperature T g  between 500° C. to 600° C. 
     
     
         16 . A method for producing a housing for an electronic device, including the steps of:
 providing a housing base part;   providing a lid including a window, the lid being comprised of a material transparent to infrared radiation or a glass, and the window being comprised of a material transparent to infrared radiation or a glass; connecting the lid to the base part.   
     
     
         17 . The method as claimed in  claim 16 , including the step, using a wafer as the base part, and, once the lid has been connected to the base part, the method furthermore including dicing the wafer along a separation line for dicing, which divides the housing into a first housing being comprised of a window that is transparent to infrared radiation or a glass lid and a second housing being comprised of a glass lid having a window transparent to infrared radiation. 
     
     
         18 . The method as claimed in  claim 16 , wherein the glass window is integrated into the lid using one of fusing, soldering using a solder glass, anodically bonding, and welding. 
     
     
         19 . The method as claimed in  claim 16 , wherein a lid made of glass is connected to the housing base part and/or to a window that is transparent to infrared radiation by anionic bonding.

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