Micro light emitting diode chip and method for manufacturing micro light emitting diode device including the same

Abstract

A micro-LED chip includes an epitaxial layered structure, and first and second electrodes. The epitaxial layered structure includes first-type and second-type semiconductor layers, and a light emitting layer sandwiched therebetween. The first and second electrodes are electrically connected to the first-type and second-type semiconductor layers, respectively. The micro-LED chip has a first distinctive region on an electrode surface of the first electrode. The first distinctive region has a surface morphology different from that of an adjacent region of the electrode surface of the first electrode. A method for manufacturing a micro-LED device including at least one micro-LED chip is also provided.

What is claimed is: 
     
         1 . A micro light emitting diode (micro-LED) device, comprising:
 a carrier substrate;   a plurality of micro-LED chips which are disposed on the carrier substrate and spaced apart from each other, each of said micro-LED chips including:
 an epitaxial layered structure that includes a first-type semiconductor layer, a light emitting layer and a second-type semiconductor layer sequentially disposed on said carrier substrate in such order; 
 a first electrode electrically connected to said first-type semiconductor layer; and 
 a second electrode electrically connected to said second-type semiconductor layer, 
   a plurality of metal wires each of which connects two adjacent ones of said micro-LED chips,   wherein each of said micro-LED chips has a size that is equal to or smaller than 100 μm×100 μm, and   wherein a total area of a projection of said first electrode on said first-type semiconductor layer and a projection of said second electrode on said first-type semiconductor layer is not smaller than 40% of an area of a projection of each of said micro-LED chips on an imaginary plane parallel to a semiconductor surface of said first-type semiconductor layer.   
     
     
         2 . The micro-LED device of  claim 1 , further comprising a securing layer that is formed between said carrier substrate and said micro-LED chips. 
     
     
         3 . The micro-LED device of  claim 2 , further comprising a plurality of supporters, each connecting a corresponding one of said micro-LED chips to said carrier substrate through said securing layer. 
     
     
         4 . The micro-LED device of  claim 1 , wherein said first electrode and said second electrode are located on the same side of said epitaxial layered structure of each of said micro-LED chips. 
     
     
         5 . The micro-LED device of  claim 1 , further comprising a material layer that includes an oxide or a nitride, said material layer being formed on said second electrode of each of said micro-LED chips. 
     
     
         6 . The micro-LED device of  claim 5 , wherein said material layer has a thickness ranging from 0.1 μm to 5 μm. 
     
     
         7 . The micro-LED device of  claim 1 , wherein said micro-LED chips are electrically connected to each other in series through said metal wires. 
     
     
         8 . The micro-LED device of  claim 1 , wherein each of said micro-LED chips has a thickness that is equal to or smaller than 20 μm. 
     
     
         9 . The micro-LED device of  claim 1 , wherein said first-type semiconductor layer is one of a p-type semiconductor layer and an n-type semiconductor layer, and said second-type semiconductor layer is the other one of said p-type semiconductor layer and said n-type semiconductor layer. 
     
     
         10 . A micro light emitting diode (micro-LED) device, comprising:
 a carrier substrate;   a plurality of micro-LED chips which are disposed on the carrier substrate and spaced apart from each other, each of said micro-LED chips including:
 an epitaxial layered structure that includes a first-type semiconductor layer, a light emitting layer and a second-type semiconductor layer sequentially disposed on said carrier substrate in such order; 
 a first electrode electrically connected to said first-type semiconductor layer; and 
 a second electrode electrically connected to said second-type semiconductor layer, 
   a plurality of metal wires each of which connects two adjacent ones of said micro-LED chips,   wherein each of said micro-LED chips has a size that is equal to or smaller than 100 μm×100 μm, and   wherein said first electrode and said second electrode are disposed on opposite sides of said epitaxial layered structure.   
     
     
         11 . The micro-LED device of  claim 10 , further comprising a securing layer that is formed between said carrier substrate and said micro-LED chips. 
     
     
         12 . The micro-LED device of  claim 11 , further comprising a plurality of supporters, each connecting a corresponding one of said micro-LED chips to said carrier substrate through said securing layer. 
     
     
         13 . The micro-LED device of  claim 10 , wherein each of said micro-LED chips has a thickness that is equal to or smaller than 20 μm. 
     
     
         14 . The micro-LED device of  claim 10 , further comprising a material layer that includes metal, said material layer being formed on said second electrode of each of said micro-LED chips opposite to said second semiconductor layer. 
     
     
         15 . The micro-LED device of  claim 14 , wherein said material layer and said metal wires are made of a same material. 
     
     
         16 . The micro-LED device of  claim 14 , wherein said material layer and said metal wires are made of different materials. 
     
     
         17 . The micro-LED device of  claim 14 , wherein said material layer has a thickness ranging from 0.1 μm to 5 μm. 
     
     
         18 . The micro-LED device of  claim 17 , wherein said material layer is electrically connected to said second electrodes of said micro-LED chips so that said second electrodes have the same electrical potential. 
     
     
         19 . The micro-LED device of  claim 10 , wherein said first electrodes of said micro-LED chips are electrically connected to each other through said metal wires so that said first electrodes have the same electrical potential. 
     
     
         20 . The micro-LED device of  claim 10 , wherein said first-type semiconductor layer is one of a p-type semiconductor layer and an n-type semiconductor layer, and said second-type semiconductor layer is the other one of said p-type semiconductor layer and said n-type semiconductor layer.