Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

Abstract

There is provided a technique having a process that includes forming a film, which contains a first element and a second element on a substrate by performing a cycle a predetermined number of times, the cycle sequentially performing: (a) supplying a first precursor gas containing the first element to the substrate in a process chamber; (b) supplying a second precursor gas, which contains the first element and has a pyrolysis temperature lower than a pyrolysis temperature of the first precursor gas, to the substrate; and (c) supplying a reaction gas, which contains the second element that is different from the first element, to the substrate.

What is claimed is: 
     
         1 . A method of manufacturing a semiconductor device, comprising:
 forming a film containing a first element on a substrate by performing a cycle a predetermined number of times, the cycle including performing:
 (a) forming a first layer containing the first element on the substrate by supplying a first precursor gas containing the first element and not containing a bond between atoms of the first element to the substrate; 
 (b) forming a second layer containing the first element on the substrate by supplying a second precursor gas containing the first element and containing a bond between atoms of the first element to the substrate on which the first layer is formed; and 
 (c) supplying a reaction gas to the substrate on which the second layer is formed. 
   
     
     
         2 . The method of  claim 1 , wherein the first layer is a layer that suppresses the first element from being adsorbed on the first layer, and
 wherein in (b), the second layer is formed on the substrate by adsorbing the first element on an adsorption site left on the substrate.   
     
     
         3 . The method of  claim 1 , wherein the first layer has no adsorption site on which the first element is adsorbed. 
     
     
         4 . The method of  claim 1 , wherein the first precursor gas contains a halogen element, and
 wherein bonding hands other than bonding hands adsorbed on a surface of the substrate, among a plurality of bonding hands of atoms of the first element constituting the first layer, are terminated by atoms of the halogen element.   
     
     
         5 . The method of  claim 1 , wherein halosilane-based gases different from each other are used as the first precursor gas and the second precursor gas, respectively. 
     
     
         6 . The method of  claim 1 , wherein in the first precursor gas, a number of atoms of the first element contained in one molecule is one. 
     
     
         7 . The method of  claim 1 , wherein a gas, which contains at least any one selected from the group of a nitriding gas and an oxidizing gas, is used as the reaction gas. 
     
     
         8 . The method of  claim 1 , wherein a thickness of the second layer is greater than a thickness of the first layer. 
     
     
         9 . The method of  claim 1 , wherein the second layer is a layer containing a bond between atoms of the first element. 
     
     
         10 . The method of  claim 9 , wherein the bond between atoms of the first element contained in the second layer is formed by bonding the first element having a dangling bond, which is generated by pyrolysis of the second precursor gas, to each other. 
     
     
         11 . The method of  claim 1 , wherein the substrate has a recess structure on its surface, and
 wherein the film containing the first element is formed within the recess structure.   
     
     
         12 . The method of  claim 1 , wherein a ratio of the first element contained in the film containing the first element is controlled by changing a ratio of a supply amount of the second precursor gas per cycle to a supply amount of the first precursor gas per cycle. 
     
     
         13 . A method of manufacturing a semiconductor device comprising the method of  claim 1 . 
     
     
         14 . A method of manufacturing a semiconductor device comprising the method of  claim 2 . 
     
     
         15 . A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform a process in a process chamber of the substrate processing apparatus, the process comprising:
 forming a film containing a first element on a substrate by performing a cycle a predetermined number of times, the cycle including performing:
 (a) forming a first layer containing the first element on the substrate by supplying a first precursor gas containing the first element and not containing a bond between atoms of the first element to the substrate; 
 (b) forming a second layer containing the first element on the substrate by supplying a second precursor gas containing the first element and containing a bond between atoms of the first element to the substrate on which the first layer is formed; and 
 (c) supplying a reaction gas to the substrate on which the second layer is formed. 
   
     
     
         16 . The non-transitory computer-readable recording medium of  claim 15 , wherein the first layer is a layer that suppresses the first element from being adsorbed on the first layer, and
 wherein in (b), the second layer is formed on the substrate by adsorbing the first element on an adsorption site left on the substrate.   
     
     
         17 . The non-transitory computer-readable recording medium of  claim 15 , wherein the second layer is a layer containing a bond between atoms of the first element. 
     
     
         18 . A substrate processing apparatus, comprising:
 a process chamber in which a substrate is accommodated;   a first precursor gas supply system configured to supply a first precursor gas containing a first element into the process chamber;   a second precursor gas supply system configured to supply a second precursor gas containing the first element into the process chamber;   a reaction gas supply system configured to supply a reaction gas into the process chamber; and   a controller configured to be capable of controlling the first precursor gas supply system, the second precursor gas supply system, and the reaction gas supply system so as to perform a process including forming a film containing the first element on the substrate in the process chamber by performing a cycle a predetermined number of times, the cycle including performing:
 (a) forming a first layer containing the first element on the substrate by supplying a first precursor gas containing the first element and not containing a bond between atoms of the first element to the substrate; 
 (b) forming a second layer containing the first element on the substrate by supplying a second precursor gas containing the first element and containing a bond between atoms of the first element to the substrate on which the first layer is formed; and 
 (c) supplying a reaction gas to the substrate on which the second layer is formed. 
   
     
     
         19 . The substrate processing apparatus of  claim 18 , wherein the first layer is a layer that suppresses the first element from being adsorbed on the first layer, and
 wherein in (b), the second layer is formed on the substrate by adsorbing the first element on an adsorption site left on the substrate.   
     
     
         20 . The substrate processing apparatus of  claim 18 , wherein the second layer is a layer containing a bond between atoms of the first element.