Inactive Structure on SOIC

Abstract

A package device includes a first device die and second device die bonded thereto. When the area of the second device die is less than half the area of the first device die, one or more inactive structures having a semiconductor substrate is also bonded to the first device die so that the combined area of the second device die and the one or more inactive structures is greater than half the area of the first device die.

What is claimed is: 
     
         1 . A package device comprising:
 a first device die, the first device die having a first footprint;   a second device die bonded to the first device die, the second device die having a second footprint less than half the first footprint, the second device die comprising a semiconductor substrate;   one or more inactive structures bonded to the first device die adjacent the second device die, the one or more inactive structures comprising a semiconductor substrate free of any active devices;   a dielectric material laterally surrounding the second device die and the one or more inactive structures; and   a connector structure disposed over the dielectric material, the connector structure electrically coupled to the second device die.   
     
     
         2 . The package device of  claim 1 , wherein a first inactive structure of the one or more inactive structures comprises:
 a semiconductor substrate; and   a dielectric bonding layer, the dielectric bonding layer fused to a dielectric bonding layer of the first device die.   
     
     
         3 . The package device of  claim 2 , wherein the first inactive structure further comprises a tensile film layer. 
     
     
         4 . The package device of  claim 2 , wherein the first inactive structure further comprises a metallization layer. 
     
     
         5 . The package device of  claim 4 , wherein the first inactive structure further comprises bond pads disposed in the dielectric bonding layer, the bond pads bonded to corresponding bond pads of the first device die without using a solder material. 
     
     
         6 . The package device of  claim 4 , wherein the first inactive structure further comprises a through-via traversing a thickness of the semiconductor substrate, the through-via configured to disperse heat from the first device die. 
     
     
         7 . The package device of  claim 1 , wherein the one or more inactive structures are free from electrically coupling to an active device of the first device die. 
     
     
         8 . A package device comprising:
 a first device die;   a second device die bonded to the first device die;   one or more inactive structures bonded to the first device die, wherein a cumulative area of the second device die and the one or more inactive structures is greater than 50% of an area of the first device die;   a dielectric layer laterally surrounding the second device die and the one or more inactive structures; and   a connector structure disposed over the dielectric layer, the connector structure electrically coupled to the second device die.   
     
     
         9 . The package device of  claim 8 , wherein a first inactive structure of the one or more inactive structures comprises a semiconductor substrate, a dielectric bonding layer, and one or more of: a tensile film, metal lines, bond pads disposed in the dielectric bonding layer, or through-vias disposed in the semiconductor substrate. 
     
     
         10 . The package device of  claim 8 , wherein a first inactive structure of the one or more inactive structures has a first sidewall aligned to a sidewall of the first device die. 
     
     
         11 . The package device of  claim 8 , wherein a connector of the connector structure is electrically coupled to the first device die through a first inactive structure of the one or more inactive structures. 
     
     
         12 . The package device of  claim 8 , wherein the cumulative area of the second device die and the one or more inactive structures is less than 95% of the area of the first device die. 
     
     
         13 . A device comprising:
 a first device die, the first device die comprising an active device disposed therein, the first device die having a first surface area;   a second device die bonded to the first device die, the second device die having a second surface area less than one-half the first surface area;   one or more inactive structures bonded to the first device die, the one or more inactive structures having a cumulative third surface area, the second surface area and the cumulative third surface area together being greater than one-half the first surface area; and   an encapsulant laterally surrounding the second device die and the one or more inactive structures.   
     
     
         14 . The device of  claim 13 , further comprising:
 a through-via in the encapsulant, the through-via extending from an upper surface of the encapsulant to contact a contact pad in the first device die.   
     
     
         15 . The device of  claim 13 , wherein the first device die comprises a first dielectric bonding layer disposed on a front surface thereof, wherein a first inactive structure of the one or more inactive structures comprises a second dielectric bonding layer disposed on a front surface thereof, and wherein the first dielectric bonding layer is fused to the second dielectric bonding layer. 
     
     
         16 . The device of  claim 13 , wherein a first inactive structure of the one or more inactive structures has a first sidewall aligned to a second sidewall of the first device die, wherein a second inactive structure of the one or more inactive structures has a third sidewall aligned to a fourth sidewall of the first device die. 
     
     
         17 . The device of  claim 16 , wherein the first sidewall and third sidewall have the same lateral extents along an upper edge of the second sidewall and fourth sidewall, respectively. 
     
     
         18 . The device of  claim 13 , wherein a first inactive structure of the one or more inactive structures comprises: a semiconductor substrate, a dielectric bonding layer, and a dummy metal features interposed between the semiconductor substrate and the dielectric bonding layer. 
     
     
         19 . The device of  claim 18 , wherein the first inactive structure further comprises a metal pad disposed in the dielectric bonding layer, the metal pad bonded to a corresponding metal pad of the first device die. 
     
     
         20 . The device of  claim 13 , wherein the one or more inactive structures are free from an electrical coupling to the active device of the first device die.