Semiconductor light-emitting device and method for manufacturing the same

Abstract

A semiconductor light-emitting device includes a semiconductor light-emitting element that emits ultraviolet radiation at a wavelength of not more than 360 nm, a package substrate that houses the semiconductor light-emitting element, a thin film layer that is formed on the package substrate and has a predetermined thickness, and a sealing material made of a silicone resin which is provided on the thin film layer so as to have a lens shape and seals the semiconductor light-emitting element, in which the sealing material forms a contact angle of not less than 15° with the thin film layer.

What is claimed is: 
     
         1 . A semiconductor light-emitting device, comprising:
 a semiconductor light-emitting element that emits ultraviolet radiation at a wavelength of not more than 360 nm;   a package substrate that houses the semiconductor light-emitting element;   a thin film layer that is formed on the package substrate and has a predetermined thickness; and   a sealing material that comprises a silicone resin, is provided on the thin film layer so as to have a lens shape that seals the semiconductor light-emitting element such that the semiconductor light-emitting element is embedded in the sealing material,   wherein the thin film layer is formed continuously around the semiconductor light-emitting element,   wherein the sealing material forms a contact angle of not less than 15° with the thin film layer.   
     
     
         2 . The semiconductor light-emitting device according to  claim 1 , wherein a recessed portion that houses the semiconductor light-emitting element is formed in the package substrate,
 the thin film is formed on a rim face that is an end face of the package substrate on an opening side of the recessed portion.   
     
     
         3 . The semiconductor light-emitting device according to  claim 1 , wherein wettability of the thin film layer to the silicone resin is smaller than wettability of the package substrate to the silicone resin. 
     
     
         4 . The semiconductor light-emitting device according to  claim 3 , wherein the thin film layer comprises a metal layer formed of metal comprising at least one of gold (Au), silver (Ag), platinum (Pt), palladium (Pd) and rhodium (Rh). 
     
     
         5 . The semiconductor light-emitting device according to  claim 1 , wherein an adhesive layer for bonding the package substrate to the thin film layer is further provided between the package substrate and the thin film layer. 
     
     
         6 . The semiconductor light-emitting device according to  claim 5 , wherein the adhesive layer comprises at least one of nickel (Ni), chromium (Cr) and tungsten (W). 
     
     
         7 . The semiconductor light-emitting device according to  claim 1 , wherein the contact angle is not less than 30° and not more than 80°. 
     
     
         8 . A method for manufacturing a semiconductor light-emitting device, comprising:
 forming a thin film layer with a predetermined thickness on a package substrate;   placing a semiconductor light-emitting element that emits ultraviolet radiation at a wavelength of not more than 360 nm so as to be housed in the package substrate;   applying a sealing material onto the thin film layer so as to embed the semiconductor light-emitting element in the sealing material, the sealing material comprising a silicone resin that seals the semiconductor light-emitting element;   shaping the applied sealing material into a lens shape so as to form a contact angle of not less than 15° with the thin film layer; and   curing the sealing material having the lens shape,   wherein in the forming the thin film layer, the thin film layer is formed continuously around the semiconductor light-emitting element.