Monolithic led array structure

Abstract

A wavelength converting layer is partially diced to generate a first and second wavelength converting layer segment and to allow partial isolation between the first segment and the second segment such that the wavelength converting layer segments are connected by a connecting wavelength converting layer. The first and second wavelength converting layer segments are attached to a first and second light emitting device, respectively to create a first and second pixel. The connecting wavelength converting layer segment is removed to allow complete isolation between the first pixel and the second pixel. An optical isolation material is applied to exposed surfaces of the first and second pixel and a sacrificial portion of the wavelength converting layer segments and optical isolation material attached to the sacrificial portion is removed from a surface facing away from the first light emitting device, to expose a emitting surface of the first wavelength converting layer segment.

1 . A structure comprising:
 a wavelength converting layer having a first surface, a second surface oppositely positioned from the first surface, and first gaps extending completely through the wavelength converting layer from the first surface to the second surface, and   
       a carrier layer having a third surface, a fourth surface oppositely positioned from the third surface, and second gaps extending partially through the carrier layer from the third surface toward the fourth surface without reaching the fourth surface, the third surface disposed on the first surface of the wavelength converting layer so that the first gaps are aligned with the second gaps. 
     
     
         2 . The structure of  claim 1 , wherein the first gaps and the second gaps each extend perpendicular to the first surface of the carrier layer. 
     
     
         3 . The structure of  claim 1 , wherein the wavelength converting layer is selected from a phosphor in glass, a phosphor in silicone, and a phosphor ceramic. 
     
     
         4 . The structure of  claim 1 , wherein a first segment of the wavelength converting layer defined by adjacent ones of the first gaps is less than 500 μm wide. 
     
     
         5 . The structure of  claim 1 , wherein a coefficient of thermal expansion (CTE) of the carrier layer is substantially matched to a CTE of the wavelength converting layer. 
     
     
         6 . The structure of  claim 1 , wherein the carrier layer is one of a glass layer and a ceramic layer. 
     
     
         7 . The structure of  claim 1 , wherein the carrier layer is alumosilicate glass. 
     
     
         8 . The structure of  claim 1 , wherein the wavelength converting layer has a total thickness of 200 μm or less in a direction perpendicular to the third surface of the carrier layer. 
     
     
         9 . The structure of  claim 1 , wherein the first gap has a width of 20 μm or less in a direction perpendicular to the third surface of the carrier layer. 
     
     
         10 . The structure of  claim 1 , wherein the first gap is aligned with and has a same width as the second gap. 
     
     
         11 . A light emitting device comprising the structure of  claim 1  and a first light emitting device and a second light emitting device both disposed on the second surface of the wavelength converting layer, such that the first light emitting device and the second light emitting device are not in direct contact with each other. 
     
     
         12 . The device of  claim 11  further comprising a tape, wherein a fifth surface of the first light emitting device is in direct contact with the second surface of the wavelength converting layer, a sixth surface of the first light emitting device opposite the fifth surface of the first light emitting device is in direct contact with the tape. 
     
     
         13 . A structure comprising:
 a wavelength converting layer having a first surface, a second surface oppositely positioned from the first surface, and gaps extending partially through the wavelength converting layer from the first surface toward the second surface without reaching the second surface, the gaps extending perpendicularly to the first surface.   
     
     
         14 . The device of  claim 13 , wherein the wavelength converting layer is selected from a phosphor in glass, a phosphor in silicone, and a phosphor ceramic. 
     
     
         15 . The device of  claim 13 , wherein a first segment of the wavelength converting layer defined by adjacent ones of the gaps is less than 500 μm wide. 
     
     
         16 . The device of  claim 13 , wherein the wavelength converting layer has a thickness of 200 μm or less in a direction perpendicular to the first surface of the carrier layer. 
     
     
         17 . The device of  claim 13 , wherein the gaps have a width of 20 μm or less. 
     
     
         18 . The device of  claim 13 , wherein the carrier layer is alumosilicate glass. 
     
     
         19 . A light emitting device comprising the structure of  claim 12  and a first light emitting device disposed on a first surface a second light emitting device disposed on the first surface of the second segment, such that the first light emitting device and the second light emitting device are not in direct contact with each other. 
     
     
         20 . The light emitting device of  claim 19  further comprising a tape, wherein a fifth surface of the first light emitting device is in direct contact with the first surface of the wavelength converting layer, and a sixth surface of the first light emitting device opposite the fifth surface of the first light emitting device is in direct contact with a tape.