Solid-state imaging device and electronic apparatus

Abstract

A solid-state imaging device according to the present disclosure includes a photoelectric conversion film that is provided outside a semiconductor substrate on a pixel-by-pixel basis, performs photoelectric conversion on light having a predetermined wavelength range, and transmits light having wavelength ranges other than the predetermined wavelength range, and a photoelectric conversion region that is provided inside the semiconductor substrate on a pixel-by-pixel basis and performs photoelectric conversion on the light having the wavelength ranges, the light having the wavelength ranges having passed through the photoelectric conversion film. The photoelectric conversion film includes a film having an avalanche function.

1 . A light detecting device, comprising:
 a first photoelectric conversion region outside a semiconductor substrate, wherein
 the first photoelectric conversion region is configured to perform photoelectric conversion on light having a first wavelength range, and 
 the first photoelectric conversion region comprises at least one of selenium (Se), Copper Indium Gallium DiSelenide (CIGS), or indium gallium arsenic (InGaAs); and 
   a second photoelectric conversion region inside the semiconductor substrate, wherein
 the first photoelectric conversion region is adjacent to the second photoelectric conversion region in a depth direction, and 
 the second photoelectric conversion region is configured to perform photoelectric conversion on the light having a second wavelength range. 
   
     
     
         2 . The light detecting device according to  claim 1 , wherein the first photoelectric conversion region is further configured to accumulate charge obtained by the photoelectric conversion on the light having the first wavelength range. 
     
     
         3 . The light detecting device according to  claim 1 , wherein
 the first photoelectric conversion region includes laminated photoelectric conversion films corresponding to two colors, and   each of the laminated photoelectric conversion films includes a film having an avalanche function.   
     
     
         4 . The light detecting device according to  claim 3 , wherein each of the laminated photoelectric conversion films is an inorganic film that includes an inorganic material. 
     
     
         5 . The light detecting device according to  claim 3 , wherein
 a first photoelectric conversion film of the laminated photoelectric conversion films is on an incident light side of the light detecting device,   the first photoelectric conversion film is configured to perform the photoelectric conversion on blue light,   a second photoelectric conversion film of the laminated photoelectric conversion films is on a semiconductor substrate side of the light detecting device,   the second photoelectric conversion film is configured to perform the photoelectric conversion on green light, and   the second photoelectric conversion region inside the semiconductor substrate is further configured to perform the photoelectric conversion on red light.   
     
     
         6 . The light detecting device according to  claim 1 , wherein the second photoelectric conversion region inside the semiconductor substrate corresponds to at least one color. 
     
     
         7 . The light detecting device according to  claim 6 , further comprising a complementary color filter on an incident light side of the first photoelectric conversion region. 
     
     
         8 . A light detecting device, comprising:
 a first photoelectric conversion region outside a semiconductor substrate, wherein
 the first photoelectric conversion region is configured to perform photoelectric conversion on light having a first wavelength range, and 
 the first photoelectric conversion region has an avalanche function; and 
   a second photoelectric conversion region inside the semiconductor substrate, wherein
 the first photoelectric conversion region is adjacent to the second photoelectric conversion region in a depth direction, and 
 the second photoelectric conversion region is configured to perform photoelectric conversion on the light having a second wavelength range. 
   
     
     
         9 . The light detecting device according to  claim 8 , wherein the first photoelectric conversion region is further configured to accumulate charge obtained by the photoelectric conversion on the light having the first wavelength range. 
     
     
         10 . The light detecting device according to  claim 8 , wherein
 the first photoelectric conversion region includes laminated photoelectric conversion films corresponding to two colors, and   each of the laminated photoelectric conversion films includes a film having the avalanche function.   
     
     
         11 . The light detecting device according to  claim 10 , wherein each of the laminated photoelectric conversion films is an inorganic film that includes an inorganic material. 
     
     
         12 . The light detecting device according to  claim 10 , wherein
 a first photoelectric conversion film of the laminated photoelectric conversion films is on an incident light side of the light detecting device,   the first photoelectric conversion film is configured to perform the photoelectric conversion on blue light,   a second photoelectric conversion film of the laminated photoelectric conversion films is on a semiconductor substrate side of the light detecting device,   the second photoelectric conversion film is configured to perform the photoelectric conversion on green light, and   the second photoelectric conversion region inside the semiconductor substrate is further configured to perform the photoelectric conversion on red light.   
     
     
         13 . The light detecting device according to  claim 8 , wherein the second photoelectric conversion region inside the semiconductor substrate corresponds to at least one color. 
     
     
         14 . The light detecting device according to  claim 13 , wherein the light detecting device further includes a complementary color filter on an incident light side of the first photoelectric conversion region.