Rf baw resonator filter architecture for 6.5ghz wi-fi 6e coexistence and other ultra-wideband applications

Abstract

A multi-stage matching network filter circuit device. The device comprises bulk acoustic wave (BAW) resonator device having an input node, an output node, and a ground node. A first matching network circuit is coupled to the input node. A second matching network circuit is coupled to the output node. A ground connection network circuit coupled to the ground node. The first or second matching network circuit can include an inductive ladder network including a plurality of series inductors in a series configuration and a plurality of grounded inductors wherein each of the plurality of grounded inductors is coupled to the connection between each connected pair of series inductors. The inductive ladder network can include one or more LC tanks, wherein each of the one or more LC tanks is coupled between a connection between a series inductor and a subsequent series inductor, which is also coupled to a grounded inductor.

1 . (canceled) 
     
     
         2 . The device of  claim 27 , wherein the piezoelectric material including aluminum scandium nitride overlapping the first electrode and overlying the multilayer reflector structure includes an essentially single crystal aluminum scandium nitride (AlScN) bearing material. 
     
     
         3 . The device of  claim 27 , wherein the piezoelectric material including aluminum scandium nitride overlapping the first electrode and overlying the multilayer reflector structure includes a polycrystalline aluminum scandium nitride (AlScN) bearing material. 
     
     
         4 . The device of  claim 27 , wherein passivation material including nitride overlying the second electrode includes a silicon nitride bearing material or an oxide bearing material configured with a silicon nitride material. 
     
     
         5 - 7 . (canceled) 
     
     
         8 . The device of  claim 11 , wherein a plurality of parallel resonators are coupled between the fourth node and the electrical ground. 
     
     
         9 . The device of  claim 32 , the circuit comprising a first node and a second node, wherein a plurality of series resonators are coupled between the first node and the second node. 
     
     
         10 . The device of  claim 9 , the circuit comprising a third node, wherein a plurality of series resonators are coupled between the second node and the third node. 
     
     
         11 . The device of  claim 10 , the circuit comprising a fourth node, wherein a plurality of series resonators are coupled between the third node and the fourth node. 
     
     
         12 . The device of  claim 9 , wherein a plurality of parallel resonators are coupled between the first node and the electrical ground. 
     
     
         13 . The device of  claim 9 , wherein a plurality of parallel resonators are coupled between the second node and an electrical ground. 
     
     
         14 . The device of  claim 10 , wherein a plurality of parallel resonators are coupled between the third node and an electrical ground. 
     
     
         15 - 26 . (canceled) 
     
     
         27 . An RF filter circuit device, the device comprising:
 a plurality of bulk acoustic wave resonators arranged in a circuit, the circuit including a series arrangement of resonators and a parallel arrangement of resonators, the circuit having a circuit response corresponding to the series arrangement of resonators and the parallel arrangement of resonators of the plurality of bulk acoustic wave resonators, each resonator of the plurality of resonators comprising:
 a substrate including a multilayer reflector structure including two pairs of a low impedance material layer and a high impedance material layer when the material layers are compared to each other; 
 a bottom electrode including tungsten overlying the multilayer reflector structure; 
 a piezoelectric material including aluminum scandium nitride overlapping the first electrode and overlying the multilayer reflector structure; 
 a top electrode including tungsten overlapping the piezoelectric film, overlapping the first electrode, and overlying the multilayer reflector; and 
 a passivation material including nitride overlying the second electrode; wherein, 
   the substrate includes a cavity region, and at least one resonator of the plurality of bulk acoustic wave resonators includes at least a portion of the bottom electrode in the cavity region of the support member; and   the circuit response corresponding to the serial configuration and the parallel configuration of the plurality of resonators has a transmission loss from a pass band having a bandwidth from 5.855 GHz to 5.925 GHz, at least one of the insulating material and the top electrode of at least one of the series resonators and parallel resonators has a thickness sufficient to provide a pass band having a bandwidth from 5.855 GHz to 5.925 GHz, the thickness of the at least one of the insulating material and the top electrode of the at least one of the series resonators and parallel resonators including a first thickness and a second thickness, the first thickness being thinner than the second thickness of the at least one of the insulating material and the top electrode.   
     
     
         28 . The device of  claim 27 , wherein,
 the at least one of the series resonators and parallel resonators including at least a portion of the bottom electrode located within the cavity region of the substrate, and   the at least one of the series resonators and parallel resonators including the at least one of the insulating material and the top electrode of having the first thickness sufficient to provide a pass band with the desired bandwidth, the first thickness being thinner than the second thickness of the at least one of the insulating material and the top electrode,   are the same resonator.   
     
     
         29 . The device of  claim 27 , the substrate including an upper surface, wherein the one resonator of the plurality of resonators that includes at least a portion of the bottom electrode located within the cavity region of the support member, further comprises:
 the bottom electrode being completely located within the cavity region of the support member such that a top surface of the bottom electrode aligns with the upper surface of the substrate.   
     
     
         30 . The device of  claim 27 , further comprising:
 at least one resonator of the plurality of resonators comprising a via through the piezoelectric material, a portion of the top electrode physically coupled to a bottom electrode of a resonator through the via of the piezoelectric material.   
     
     
         31 . The device of  claim 30 , further comprising:
 a mass loaded area overlying the top electrode of the at least one resonator, the passivation layer including nitride of the at least one resonator overlying the mass loaded area.   
     
     
         32 . The device of  claim 27 , the circuit including a plurality of electrical nodes, wherein the circuit including the series arrangement of resonators and the parallel arrangement of resonators has a ladder topology including a series circuit component from the arrangement of the series resonators coupled between the plurality of electrical nodes and a parallel circuit component from the arrangement of parallel resonators coupled between the plurality of electrical nodes and electrical ground. 
     
     
         33 . The device of  claim 32 , further comprising:
 one or more inductors coupled to at least one of the plurality of electrical nodes.   
     
     
         34 . The device of  claim 33 , wherein the one or more inductors are located off of a chip that includes the device. 
     
     
         35 . The device of  claim 33 , wherein the one or more inductors coupled to at least one of the plurality of electrical nodes are also coupled to the electrical ground. 
     
     
         36 . The device of  claim 33 , wherein the one or more inductors coupled to at least one of the plurality of electrical nodes are also coupled to one of and input node and an output node.