Magnetoelectric spin orbit logic transistor with a spin filter

Abstract

An apparatus is provided which comprises: a first stack comprising a magnetic insulating material (MI such as, EuS, EuO, YIG, TmIG, or GaMnAs) and a transition metal dichalcogenide (TMD such as MoS 2 , MoSe 2 , WS 2 , WSe 2 , PtS 2 , PtSe 2 , WTe 2 , MoTe 2 , or graphene; a second stack comprising an MI material and a TMD, wherein the first and second stacks are separated by an insulating material (e.g., oxide); a magnet (e.g., a ferromagnet or a paramagnet) adjacent to the TMDs of the first and second stacks, and also adjacent to the insulating material; and a magnetoelectric material (e.g., (LaBi)FeO 3 , LuFeO 3 , PMN-PT, PZT, AlN, or (SmBi)FeO 3 ) adjacent to the magnet.

We claim: 
     
         1 . An apparatus, comprising:
 a stack comprising a magnetic insulating material and a transition metal dichalcogenide;   an interconnect separated from the stack by an insulating material;   a magnet adjacent to the transition metal dichalcogenide, the interconnect, and the insulating material; and   a magnetoelectric material adjacent to the magnet.   
     
     
         2 . The apparatus of  claim 1 , wherein the magnet comprises one or more of Pt, Pd, W, Ce, Al, Li, Mg, Na, Cr, O, Co, Dy, Er, Eu, Gd, Fe, Nd, K, Pr, Sm, Tb, Tm, or V. 
     
     
         3 . The apparatus of  claim 1 , wherein the magnet comprises one or a combination of materials comprising one or more of: a Heusler alloy, Co, Fe, Ni, Gd, B, Ge, Ga, permalloy, or Yttrium Iron Garnet (YIG), and wherein the Heusler alloy is a material which includes one or more of: Cu, Mn, Al, In, Sn, Ni, Sb, Ga, Co, Fe, Si, Pd, Sb, Si, V, or Ru. 
     
     
         4 . The apparatus of  claim 1 , wherein the interconnect is a first interconnect, and wherein the apparatus comprises a second interconnect adjacent to the magnetoelectric material, wherein the first or second interconnect comprises one or more of Cu, Ag, Al, Au, or graphene. 
     
     
         5 . The apparatus of  claim 1 , wherein the magnetoelectric material comprises one of Cr, O, or multiferroic material, and wherein the multiferroic material comprises one or more of Bi, Fe, O, Lu, or La. 
     
     
         6 . The apparatus of  claim 1 , wherein the magnet and the magnetic insulating material have in-plane magnetic anisotropy, or wherein the magnet and the magnetic insulating material have perpendicular magnetic anisotropy. 
     
     
         7 . The apparatus of  claim 1 , wherein the magnetic insulating material comprises one or more of Eu, S, O, Y, Fe, Tm, Ga, Mn, or As, and wherein the transition metal dichalcogenide of the first or second stacks comprises one or more of: Mo, S, Se, W, Pt, Te, or graphene. 
     
     
         8 . A system, comprising:
 a memory;   a processor coupled to the memory, the processor comprising a spin filter device comprising:
 a stack comprising a magnetic insulating material and a transition metal dichalcogenide; 
 an interconnect separated from the stack by an insulating material; 
 a magnet adjacent to the transition metal dichalcogenide, the interconnect, and the insulating material; and 
 a magnetoelectric material adjacent to the magnet; and 
   a wireless interface configured to communicate with another device.   
     
     
         9 . The system of  claim 8 , wherein the magnet comprises one or more of Pt, Pd, W, Ce, Al, Li, Mg, Na, Cr, O, Co, Dy, Er, Eu, Gd, Fe, Nd, K, Pr, Sm, Tb, Tm, or V. 
     
     
         10 . The system of  claim 8 , wherein the magnet comprises one or a combination of materials comprising one or more of: a Heusler alloy, Co, Fe, Ni, Gd, B, Ge, Ga, permalloy, or Yttrium Iron Garnet (YIG), and wherein the Heusler alloy is a material which includes one or more of: Cu, Mn, Al, In, Sn, Ni, Sb, Ga, Co, Fe, Si, Pd, Sb, Si, V, or Ru. 
     
     
         11 . The system of  claim 8 , wherein the interconnect is a first interconnect, and wherein the apparatus comprises a second interconnect adjacent to the magnetoelectric material, wherein the first or second interconnect comprises one or more of Cu, Ag, Al, Au, or graphene. 
     
     
         12 . The system of  claim 8 , wherein the magnetoelectric material comprises one of Cr, O, or multiferroic material, and wherein the multiferroic material comprises one or more of Bi, Fe, O, Lu, or La. 
     
     
         13 . The system of  claim 8 , wherein the magnet and the magnetic insulating material have in-plane magnetic anisotropy, or wherein the magnet and the magnetic insulating material have perpendicular magnetic anisotropy. 
     
     
         14 . The system of  claim 8 , wherein the magnetic insulating material comprises one or more of Eu, S, O, Y, Fe, Tm, Ga, Mn, or As, and wherein the transition metal dichalcogenide of the first or second stacks comprises one or more of: Mo, S, Se, W, Pt, Te, or graphene. 
     
     
         15 . An apparatus, comprising:
 a source separated from a drain by an insulating material, one of the source and drain comprising one or more of Cu, Al, Au, Ag, carbon nanotubes, or graphene, and the other of the source and drain comprising a transition metal dichalcogenide over a magnetic insulating material;   a magnet adjacent to the source, drain, and the insulating material; and   a magnetoelectric material over the magnet.   
     
     
         16 . The apparatus of  claim 15 , wherein the magnet comprises one or more of Pt, Pd, W, Ce, Al, Li, Mg, Na, Cr, O, Co, Dy, Er, Eu, Gd, Fe, Nd, K, Pr, Sm, Tb, Tm, or V. 
     
     
         17 . The apparatus of  claim 15 , wherein the magnet comprises one or a combination of materials comprising one or more of: a Heusler alloy, Co, Fe, Ni, Gd, B, Ge, Ga, permalloy, or Yttrium Iron Garnet (YIG), and wherein the Heusler alloy is a material which includes one or more of: Cu, Mn, Al, In, Sn, Ni, Sb, Ga, Co, Fe, Si, Pd, Sb, Si, V, or Ru. 
     
     
         18 . The apparatus of  claim 15 , further comprising an interconnect adjacent to the magnetoelectric material, wherein the interconnect comprises one or more of Cu, Ag, Al, Au, or graphene. 
     
     
         19 . The apparatus of  claim 15 , wherein the magnetoelectric material comprises one of Cr, O, or multiferroic material, and wherein the multiferroic material comprises one or more of Bi, Fe, O, Lu, or La. 
     
     
         20 . The apparatus of  claim 15 , wherein the magnetic insulating material comprises one or more of Eu, S, O, Y, Fe, Tm, Ga, Mn, or As, and wherein the transition metal dichalcogenide of the first or second stacks comprises one or more of: Mo, S, Se, W, Pt, Te, or graphene.