US2022352085A1PendingUtilityA1

Package structure with fan-out structure

Assignee: TAIWAN SEMICONDUCTOR MFG CO LTDPriority: Oct 30, 2018Filed: Jul 4, 2022Published: Nov 3, 2022
Est. expiryOct 30, 2038(~12.3 yrs left)· nominal 20-yr term from priority
H10W 74/15H10W 90/724H10W 90/734H10W 72/07232H10W 72/016H10P 72/7424H10P 72/74H10W 90/701H10W 90/401H10W 74/117H10W 74/019H10W 70/093H10W 70/614H10W 95/00H01L 23/3128H01L 21/565H01L 21/568H01L 23/5386H01L 21/4857H01L 23/5389H01L 21/6835H01L 23/49811H01L 23/5383H01L 2221/68345H01L 21/4853H01L 23/5385H01L 23/49833H01L 23/3142H01L 23/49816H10D 84/0151H10D 84/038H10D 86/441H10D 89/10H10D 84/0158H10D 86/0214
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Claims

Abstract

A package structure is provided. The package structure includes a first redistribution structure and a second redistribution structure over the first redistribution structure. The package structure also includes. The package structure further includes a semiconductor chip between the first redistribution structure and the second redistribution structure. In addition, the package structure includes a protective layer surrounding the semiconductor chip and a conductive structure penetrating through the protective layer. The conductive structure has a solder element and a conductive pillar, the conductive pillar has a first end and a second end, and the first end is between the second end and the solder element. The solder element has a protruding portion extending from an interface between the conductive pillar and the solder element towards the second end. A terminal of the protruding portion is vertically between the first end and the second end.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A package structure, comprising:
 a first redistribution structure;   a second redistribution structure over the first redistribution structure;   a semiconductor chip between the first redistribution structure and the second redistribution structure;   a protective layer surrounding the semiconductor chip; and   a conductive structure penetrating through the protective layer, wherein the conductive structure comprises a solder element and a conductive pillar, the conductive pillar has a first end and a second end, the first end is between the second end and the solder element, the solder element has a protruding portion extending from an interface between the conductive pillar and the solder element towards the second end, and a terminal of the protruding portion is vertically between the first end and the second end.   
     
     
         2 . The package structure as claimed in  claim 1 , wherein the protruding portion of the solder element has an inner sidewall, and the inner sidewall and a sidewall of the conductive pillar define an acute angle. 
     
     
         3 . The package structure as claimed in  claim 1 , wherein the protruding portion of the solder element laterally and partially surrounds of a sidewall of the conductive pillar. 
     
     
         4 . The package structure as claimed in  claim 1 , wherein the solder element has a first side surface extending into the second redistribution structure, the solder element has a second side surface extending along a bottom surface of the second redistribution structure, the first side surface and the second side surface define an angle, and the angle is in a range from about 90 degrees to about 140 degrees. 
     
     
         5 . The package structure as claimed in  claim 1 , further comprising:
 connectors between the semiconductor chip and the first redistribution structure; and   an underfill layer between the connectors and the protective layer.   
     
     
         6 . The package structure as claimed in  claim 5 , wherein the conductive pillar is between the first redistribution structure and the solder element. 
     
     
         7 . The package structure as claimed in  claim 5 , wherein the interface between the conductive pillar and the solder element is vertically between a top surface of the semiconductor chip and a bottom surface of the semiconductor chip. 
     
     
         8 . The package structure as claimed in  claim 1 , wherein a portion of the protective layer is between the protruding portion of the solder element and the conductive pillar. 
     
     
         9 . The package structure as claimed in  claim 1 , wherein the protective layer laterally surrounds the protruding portion of the solder element. 
     
     
         10 . The package structure as claimed in  claim 1 , wherein the protruding portion of the solder element continuously surrounds the conductive pillar. 
     
     
         11 . A package structure, comprising:
 a first redistribution structure;   a second redistribution structure over the first redistribution structure;   a semiconductor chip between the first redistribution structure and the second redistribution structure;   a conductive pillar bonded with the first redistribution structure;   a solder element bonded with the second redistribution structure, wherein the solder element has a protruding portion extending towards the first redistribution structure and extending across an end of the conductive pillar; and   a protective layer surrounding the semiconductor chip, the solder element, and the conductive pillar, wherein the protective layer fills a recess between the protruding portion of the solder element and the conductive pillar.   
     
     
         12 . The package structure as claimed in  claim 11 , wherein a portion of the protective layer is between the protruding portion of the solder element and the first redistribution structure. 
     
     
         13 . The package structure as claimed in  claim 11 , wherein the conductive pillar is closer to the first redistribution structure than the solder element. 
     
     
         14 . The package structure as claimed in  claim 11 , wherein the protruding portion of the solder element has an inner sidewall, and the inner sidewall and a sidewall of the conductive pillar define an acute angle. 
     
     
         15 . The package structure as claimed in  claim 11 , wherein the protective layer is in direct contact with the solder element and the conductive pillar. 
     
     
         16 . A package structure, comprising:
 a first redistribution structure;   a second redistribution structure over the first redistribution structure;   a semiconductor chip between the first redistribution structure and the second redistribution structure;   a conductive pillar bonded with the first redistribution structure; and   a solder element bonded with the second redistribution structure, wherein the solder element has a protruding portion extending towards the first redistribution structure to exceed an end of the conductive pillar and, and the conductive pillar is closer to the first redistribution structure than the solder element.   
     
     
         17 . The package structure as claimed in  claim 16 , further comprising a protective layer surrounding the semiconductor chip, wherein a portion of the protective layer is between the conductive pillar and the protruding portion of the solder element. 
     
     
         18 . The package structure as claimed in  claim 17 , wherein the protective layer is in direct contact with the protruding portion of the solder element. 
     
     
         19 . The package structure as claimed in  claim 16 , wherein the semiconductor chip is bonded with the first redistribution structure. 
     
     
         20 . The package structure as claimed in  claim 16 , wherein the protruding portion of the solder element has an inner sidewall, and the inner sidewall and a sidewall of the conductive pillar define an acute angle.

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