US2022351893A1PendingUtilityA1

High-Aspect Ratio Electroplated Structures And Anisotropic Electroplating Processes

Assignee: HUTCHINSON TECHNOLOGYPriority: Nov 18, 2016Filed: Jul 11, 2022Published: Nov 3, 2022
Est. expiryNov 18, 2036(~10.3 yrs left)· nominal 20-yr term from priority
H01F 41/042H01F 5/00C25D 5/02C23C 18/1653C25D 7/00H01F 5/003C25D 1/003H01F 27/28H01F 38/14H01F 27/2804
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Claims

Abstract

A device includes a dielectric layer having a first surface and a second surface. The device also includes a first set of high-aspect ratio electroplated structures disposed on the first surface of the dielectric layer and a second set of high-aspect ratio electroplated structures disposed on the second surface of the dielectric layer opposite the first set of high-aspect ratio electroplated structures.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A method comprising:
 disposing a dielectric layer on a conductive substrate;   forming a first set of high-aspect ratio electroplated structures from at least a portion of a second set of traces on the conductive substrate, the first set of high-aspect ratio electroplated structures disposed on a first surface of the dielectric layer;   forming a second set of high-aspect ratio electroplated structures from at least a portion of a second set of traces included on the dielectric layer, the set of high-aspect ratio electroplated structures disposed on a second surface of the dielectric layer.   
     
     
         2 . The method of  claim 1 , further comprising:
 disposing a second dielectric layer on the first set of high-aspect ratio electroplated structures.   
     
     
         3 . The method of  claim 1 , further comprising:
 disposing a third dielectric layer on the second set of high-aspect ratio electroplated structures.   
     
     
         4 . The method of  claim 1 , wherein the dielectric layer includes a via to electrically couple at least one high-aspect ratio electrical plated structure of the first set of high-aspect ratio electroplated structures with at least one high-aspect ratio electrical plated structure of the second set of high-aspect ratio electroplated structures. 
     
     
         5 . The method of  claim 1 , wherein the first set of high-aspect ratio electroplated structures and the second set of high-aspect ratio electroplated structures are configured to form an inductive coupling coil. 
     
     
         6 . The method of  claim 1 , further comprising:
 forming a coil having two outer coil sections and an inner coil section between the two outer coils.   
     
     
         7 . The method of  claim 1 , further comprising:
 disposing a first terminal pad coupled with at least one high-aspect ratio electrical plated structure of the first set of high-aspect ratio electroplated structures.   
     
     
         8 . The method of  claim 7 , wherein the first terminal pad is a nickel terminal plated with a gold layer. 
     
     
         9 . The method of  claim 1 , further comprising:
 forming at least a portion of the first set of high-aspect ratio electroplated structures using a crown plating process.   
     
     
         10 . The method of  claim 1 , wherein the second set of high-aspect ratio electroplated structures are formed by etching the conductive substrate. 
     
     
         11 . The method of  claim 1 , further comprising:
 forming a first metal crown portion over at least a portion of each trace of the second set of traces using a crown plating process.   
     
     
         12 . A method for manufacturing a coil, the method comprising:
 etching or plating a conductive substrate to form a first plurality of traces;   disposing a dielectric layer on the conductive substrate;   disposing a second plurality of traces on the dielectric layer;   forming a first set of high-aspect ratio electroplated structures disposed on the dielectric layer; and   forming a second set of high-aspect ratio electroplated structures disposed on a surface of the dielectric layer opposite the first set of high-aspect ratio electroplated structures.   
     
     
         13 . The method of  claim 12 , wherein the dielectric layer includes a via to electrically couple at least one high-aspect ratio electrical plated structure of the first set of high-aspect ratio electroplated structures with at least one high-aspect ratio electrical plated structure of the second set of high-aspect ratio electroplated structures. 
     
     
         14 . The method of  claim 12 , wherein the first set of high-aspect ratio electroplated structures and the second set of high-aspect ratio electroplated structures form a first coil section of the coil. 
     
     
         15 . The method of  claim 14 , further comprising:
 forming a third set of high-aspect ratio electroplated structures and a fourth set of high-aspect ratio electroplated structures to form a second coil section of the coil.   
     
     
         16 . The method of  claim 15 , further comprising:
 forming a fifth set of high-aspect ratio electroplated structures and a sixth set of high-aspect ratio electroplated structures to form a third coil section of the coil.   
     
     
         17 . The method of  claim 16 , wherein the first coil section is electrically coupled with the second coil section and the third coil section. 
     
     
         18 . The method of  claim 16 , wherein the second coil section is electrically coupled with the third coil section. 
     
     
         19 . The method of  claim 12 , wherein the second set of high-aspect ratio electroplated structures are formed by etching the conductive substrate. 
     
     
         20 . The method of  claim 19 , wherein at least a portion of the second set of high-aspect ratio electroplated structures are formed using a crown plating process.

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