Counter electrode for electrochromic devices

Abstract

The embodiments herein relate to electrochromic stacks, electrochromic devices, and methods and apparatus for making such stacks and devices. In various embodiments, an anodically coloring layer in an electrochromic stack or device is fabricated to include nickel-tungsten-tin-oxide (NiWSnO). This material is particularly beneficial in that it is very transparent in its clear state.

What is claimed is: 
     
         1 . A method of fabricating an electrochromic stack, the method comprising:
 forming a cathodically coloring layer comprising a cathodically coloring electrochromic material; and   forming an anodically coloring layer comprising nickel-tungsten-tin-oxide (NiWSnO).   
     
     
         2 . The method of  claim 1 , wherein the NiWSnO comprises an atomic ratio of Ni:(W+Sn) that is between about 1:1 and 4:1. 
     
     
         3 . The method of  claim 2 , wherein the NiWSnO comprises an atomic ratio of Ni:(W+Sn) that is between about 1:1 and 3:1. 
     
     
         4 . The method of  claim 3 , wherein the NiWSnO comprises an atomic ratio of Ni:(W+Sn) that is between about 2:1 and 3:1. 
     
     
         5 . The method of  claim 3 , wherein the NiWSnO comprises an atomic ratio of Ni:(W+Sn) that is between about 1.5:1 and 2.5:1. 
     
     
         6 . The method of  claim 5 , wherein the NiWSnO comprises an atomic ratio of Ni:(W+Sn) that is between about 2:1 and 2.5:1. 
     
     
         7 . The method of any one of  claims 1 - 6 , wherein the NiWSnO comprises an atomic ratio of W: Sn that is between about 1:9 and 9:1. 
     
     
         8 . The method of  claim 7 , wherein the NiWSnO comprises an atomic ratio of W:Sn that is between about 1:1 and 3:1. 
     
     
         9 . The method of  claim 8 , wherein the NiWSnO comprises an atomic ratio of W:Sn that is between about 1.5:1 and 2.5:1. 
     
     
         10 . The method of  claim 9 , wherein the NiWSnO comprises an atomic ratio of W:Sn that is between about 1.5:1 and 2:1. 
     
     
         11 . The method of any one of  claims 1 - 10 , wherein forming the anodically coloring layer comprises sputtering one or more sputter targets to form the NiWSnO. 
     
     
         12 . The method of  claim 11 , wherein at least one of the one or more of the sputter targets comprise an elemental metal selected from the group consisting of: nickel, tungsten, and tin. 
     
     
         13 . The method of  claim 11  or  12 , wherein at least one of the one or more of the sputter targets comprise an alloy comprising two or more metals selected from the group consisting of: nickel, tungsten, and tin. 
     
     
         14 . The method of any one of  claims 11 - 13 , wherein at least one of the one or more of the sputter targets comprise an oxide. 
     
     
         15 . The method of any one of  claims 1 - 14 , wherein the anodically coloring layer is substantially amorphous. 
     
     
         16 . The method of any one of  claims 1 - 15 , wherein the cathodically coloring layer and the anodically coloring layer are formed in direct physical contact with one another, without a separate ion conductor layer deposited between them. 17 The method of any of  claims 1 - 16 , wherein the cathodically coloring layer comprises tungsten oxide, optionally doped with one or more dopants selected from the group consisting of molybdenum, vanadium, and titanium. 
     
     
         18 . An electrochromic stack, comprising:
 a cathodically coloring layer comprising a cathodically coloring material; and   an anodically coloring layer comprising nickel-tungsten-tin-oxide (NiWSnO).   
     
     
         19 . The electrochromic stack of  claim 18 , wherein the NiWSnO comprises an atomic ratio of Ni:(W+Sn) that is between about 1:1 and 4:1. 
     
     
         20 . The electrochromic stack of  claim 19 , wherein the NiWSnO comprises an atomic ratio of Ni:(W+Sn) that is between about 1:1 and 3:1. 
     
     
         21 . The electrochromic stack of  claim 20 , wherein the NiWSnO comprises an atomic ratio of Ni:(W+Sn) that is between about 2:1 and 3:1. 
     
     
         22 . The electrochromic stack of  claim 20 , wherein the NiWSnO comprises an atomic ratio of Ni:(W+Sn) that is between about 1.5:1 and 2.5:1. 
     
     
         23 . The electrochromic stack of  claim 22 , wherein the NiWSnO comprises an atomic ratio of Ni:(W+Sn) that is between about 2:1 and 2.5:1. 
     
     
         24 . The electrochromic stack of any one of  claims 18 - 23 , wherein the NiWSnO comprises an atomic ratio of W:Sn that is between about 1:9 and 9:1. 
     
     
         25 . The electrochromic stack of  claim 24 , wherein the NiWSnO comprises an atomic ratio of W:Sn that is between about 1:1 and 3:1. 
     
     
         26 . The electrochromic stack of  claim 25 , wherein the NiWSnO comprises an atomic ratio of W:Sn that is between about 1.5:1 and 2.5:1. 
     
     
         27 . The electrochromic stack of  claim 26 , wherein the NiWSnO comprises an atomic ratio of W:Sn that is between about 1.5:1 and 2:1. 
     
     
         28 . The electrochromic stack of any of  claims 18 - 27 , wherein the anodically coloring layer is substantially amorphous. 
     
     
         29 . The electrochromic stack of any of  claims 18 - 28 , wherein the anodically coloring layer comprises an amorphous matrix of a first material having domains of a second material dispersed throughout the amorphous matrix. 
     
     
         30 . The electrochromic stack of any of  claims 18 - 29 , wherein the cathodically coloring layer is in direct physical contact with the anodically coloring layer. 
     
     
         31 . The electrochromic stack of any of  claims 18 - 30 , wherein the cathodically coloring layer comprises tungsten oxide, optionally doped with one or more dopants selected from the group consisting of molybdenum, vanadium, and titanium. 
     
     
         32 . An integrated deposition system for fabricating an electrochromic stack, the system comprising:
 a plurality of deposition stations aligned in series and interconnected and operable to pass a substrate from one station to the next without exposing the substrate to an external environment, wherein the plurality of deposition stations comprise
 (i) a first deposition station containing one or more material sources for depositing a cathodically coloring layer; 
 (ii) a second deposition station containing one or more material sources for depositing an anodically coloring layer comprising nickel-tungsten-tin-oxide (NiWSnO); and 
   a controller comprising program instructions for passing the substrate through the plurality of stations in a manner that deposits on the substrate (i) the cathodically coloring layer, and (ii) the anodically coloring layer to form a stack comprising at least the cathodically coloring layer and the anodically coloring layer.   
     
     
         33 . The integrated deposition system of  claim 32 , wherein the NiWSnO comprises an atomic ratio of Ni:(W+Sn) that is between about 1:1 and 4:1. 
     
     
         34 . The integrated deposition system of  claim 33 , wherein the NiWSnO comprises an atomic ratio of Ni:(W+Sn) that is between about 1:1 and 3:1. 
     
     
         35 . The integrated deposition system of  claim 34 , wherein the NiWSnO comprises an atomic ratio of Ni:(W+Sn) that is between about 2:1 and 3:1. 
     
     
         36 . The integrated deposition system of  claim 34 , wherein the NiWSnO comprises an atomic ratio of Ni:(W+Sn) that is between about 1.5:1 and 2.5:1. 
     
     
         37 . The integrated deposition system of  claim 36 , wherein the NiWSnO comprises an atomic ratio of Ni:(W+Sn) that is between about 2:1 and 2.5:1. 
     
     
         38 . The integrated deposition system of any one of  claims 32 - 37 , wherein the NiWSnO comprises an atomic ratio of W:Sn that is between about 1:9 and 9:1. 
     
     
         39 . The integrated deposition system of  claim 38 , wherein the NiWSnO comprises an atomic ratio of W:Sn that is between about 1:1 and 3:1. 
     
     
         40 . The integrated deposition system of  claim 39 , wherein the NiWSnO comprises an atomic ratio of W:Sn that is between about 1.5:1 and 2.5:1. 
     
     
         41 . The integrated deposition system of  claim 40 , wherein the NiWSnO comprises an atomic ratio of W: Sn that is between about 1.5:1 and 2:1. 
     
     
         42 . The integrated deposition system of claim any one of  claims 32 - 41 , wherein at least one of the one or more material sources for depositing the anodically coloring layer comprise an elemental metal selected from the group consisting of: nickel, tungsten, and tin. 
     
     
         43 . The integrated deposition system of any one of  claims 32 - 42 , wherein at least one of the one or more material sources for depositing the anodically coloring layer comprise an alloy comprising two or more metals selected from the group consisting of: nickel, tungsten, and tin. 
     
     
         44 . The integrated deposition system of any one of  claims 32 - 43 , wherein at least one of the one or more material sources for depositing the anodically coloring layer comprise an oxide. 
     
     
         45 . The integrated deposition system of any one of  claims 32 - 44 , wherein the deposition system is configured to deposit the anodically coloring layer as a substantially amorphous material. 
     
     
         46 . The integrated deposition system of any of  claims 32 - 45 , wherein the integrated deposition system is configured to deposit the cathodically coloring layer and the anodically coloring layer in direct physical contact with one another. 
     
     
         47 . The integrated deposition system of any of  claims 32 - 46 , wherein at least one of the one or more material sources for depositing the anodically coloring layer is a sputter target comprising nickel, tungsten, and tin. 
     
     
         48 . The integrated deposition system of any of  claims 32 - 47 , further comprising one or more lithium sources. 
     
     
         49 . The integrated deposition system of  claim 48 , wherein the controller comprises instructions for passing the substrate through the plurality of stations in a manner that deposits lithium on the cathodically coloring layer and/or on the anodically coloring layer. 
     
     
         50 . The integrated deposition system of  claim 49 , wherein the controller comprises instructions for passing the substrate through the plurality of stations in a manner that deposits lithium on the cathodically coloring layer and on the anodically coloring layer.