Semiconductor wafer carrier structure and metal-organic chemical vapor deposition device

Abstract

A semiconductor wafer carrier structure includes a carrier body having a surface; a protective film covering the surface; a susceptor disposed on the carrier body; and a patterned coating film on the susceptor, wherein the patterned coating film has two or more different thicknesses, wherein patterns of the patterned coating film are symmetrically distributed with respect to a center of the susceptor.

What is claimed is: 
     
         1 . A semiconductor wafer carrier structure, comprising:
 a carrier body having a surface;   a protective film covering the surface;   a susceptor disposed on the carrier body; and   a patterned coating film on the susceptor, wherein the patterned coating film has two or more different thicknesses.   
     
     
         2 . The carrier structure as claimed in  claim 1 , wherein patterns of the patterned coating film are symmetrically distributed with respect to a center of the susceptor. 
     
     
         3 . The carrier structure as claimed in  claim 1 , wherein the patterned coating film is formed of a material comprising SiC, TaC, graphite, ceramic, quartz, graphene, diamond-like film, or a combination thereof. 
     
     
         4 . The carrier structure as claimed in  claim 3 , wherein the susceptor is formed of a material comprising SiC, graphene, or a combination thereof. 
     
     
         5 . The carrier structure as claimed in  claim 1 , wherein a cross-sectional shape of the patterned coating film comprises a rectangle, a trapezoid, an arc, a triangle, or a combination thereof. 
     
     
         6 . The carrier structure as claimed in  claim 1 , wherein the patterned coating film is defined with a reference surface, and the patterned coating film further comprises a protrusive portion above the reference surface, a depressed portion below the reference surface, or a combination thereof. 
     
     
         7 . The carrier structure as claimed in  claim 6 , wherein the protrusive portion protrudes above the reference surface by a thickness of 1 μm to 100 μm. 
     
     
         8 . The carrier structure as claimed in  claim 6 , wherein the protrusive portion comprises a first protrusive portion and a second protrusive portion surrounding the first protrusive portion. 
     
     
         9 . The carrier structure as claimed in  claim 8 , wherein the first protrusive portion covers a center of the susceptor. 
     
     
         10 . The carrier structure as claimed in  claim 9 , wherein the second protrusive portion is disposed annularly on the susceptor. 
     
     
         11 . The carrier structure as claimed in  claim 10 , wherein the second protrusive portion is intermittently distributed on the susceptor. 
     
     
         12 . The carrier structure as claimed in  claim 1 , wherein the patterned coating film comprises:
 a first coating film on the susceptor; and   a second coating film with a different material than the first coating film, wherein the second coating film is patterned and distributed on the susceptor, and at least a portion of the second coating film is stacked on the first coating film.   
     
     
         13 . The carrier structure as claimed in  claim 1 , wherein the patterned coating film is formed of a single material and with various thickness. 
     
     
         14 . The carrier structure as claimed in  claim 13 , wherein a thickness of the patterned coating film varies in a step-shape manner. 
     
     
         15 . The carrier structure as claimed in  claim 1 , wherein the susceptor has a plurality of supporting parts, the supporting parts are located at an edge of the susceptor, and a top of each supporting part is higher than a top of the patterned coating film in a thickness direction of the susceptor. 
     
     
         16 . The carrier structure as claimed in  claim 1 , wherein a ratio of a diameter of the patterned coating film at a center of the susceptor to a diameter of the susceptor ranges from greater than 0 to less than ⅓. 
     
     
         17 . The carrier structure as claimed in  claim 1 , wherein a passivation layer is formed on a peripheral surface of the susceptor, and a material of the passivation layer is different from the patterned coating film. 
     
     
         18 . A metal-organic chemical vapor deposition device, comprising:
 a chamber;   the semiconductor wafer carrier structure as claimed in  claim 1  placed in the chamber;   a support member for supporting the semiconductor wafer carrier structure; and   a heater disposed below the semiconductor wafer carrier structure for heating the semiconductor wafer carrier structure.