Erosion resistant metal silicate coatings

Abstract

Disclosed are rare earth metal containing silicate coatings, coated articles (e.g., heaters and susceptors) or bodies of articles and methods of coating such articles with a rare earth metal containing silicate coating.

What is claimed is: 
     
         1 . A method comprising:
 performing a deposition process to deposit a rare earth metal containing silicate coating on a surface of a chamber component for a processing chamber, wherein the rare earth metal containing silicate coating has a thickness of about 5 nm to about 250 μm, and   optionally, performing a PVD or PEPVD deposition process to deposit a thick rare earth metal silicate layer above or below the rare earth metal containing silicate coating, and   wherein the rare earth metal containing silicate coating comprises at least one of yttrium monosilicate (Y 2 SiO 5 ), yttrium disilicate (Y 2 Si 2 O 7 ), erbium monosilicate (Er 2 SiO 5 ), erbium disilicate (Er 2 Si 2 O 7 ), tantalum monosilicate (Ta 2 SiO 5 ), tantalum disilicate (Ta 2 Si 2 O 7 ), iridium monosilicate (Ir 2 SiO 5 ), iridium disilicate (Ir 2 Si 2 O 7 ), rhodium monosilicate (Rh 2 SiO 5 ), rhodium disilicate (Rh 2 Si 2 O 7 ), lanthanum monosilicate (La 2 SiO 5 ), lanthanum disilicate (La 2 Si 2 O 7 ), lutetium monosilicate (Lu 2 SiO 5 ), lutetium disilicate (Lu 2 Si 2 O 7 ), scandium monosilicate (Sc 2 SiO 5 ), scandium disilicate (Sc 2 Si 2 O 7 ), gadolinium monosilicate (Gd 2 SiO 5 ), gadolinium disilicate (Gd 2 Si 2 O 7 ), samarium monosilicate (Sm 2 SiO 5 ), samarium disilicate (Sm 2 Si 2 O 7 ), dysprosium monosilicate (Dy 2 SiO 5 ), dysprosium disilicate (Dy 2 Si 2 O 7 ) and combinations thereof.   
     
     
         2 . The method of  claim 1 , wherein the deposition process comprises at least one of chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), physical vapor deposition (PVD), plasma enhanced physical vapor deposition (PEPVD) and atomic layer deposition (ALD). 
     
     
         3 . The method of  claim 1 , further comprising:
 forming a buffer layer on the surface of the chamber component prior to performing the deposition process to deposit the rare earth metal containing silicate coating on the surface of the chamber component.   
     
     
         4 . The method of  claim 1 , wherein forming the rare earth metal containing silicate coating comprises:
 forming a multi-layer stack by alternately depositing layers of a rare earth metal monosilicate and a rare earth metal disilicate,   wherein the rare earth metal monosilicate comprises at least one of Y 2 SiO 5 , Er 2 SiO 5 , Ta 2 SiO 5 , Ir 2 SiO 5 , Rh 2 SiO 5 , La 2 SiO 5 , Lu 2 SiO 5 , Sc 2 SiO 5 , Gd 2 SiO 5 , Sm 2 SiO 5  and Dy 2 SiO 5 , and   wherein the rare earth metal disilcate comprises at least one of Y 2 Si 2 O 7 , Er 2 Si 2 O 7 , Ta 2 Si 2 O 7 , Ir 2 Si 2 O 7 , Rh 2 Si 2 O 7 , La 2 Si 2 O 7 , Lu 2 Si 2 O 7 , Sc 2 Si 2 O 7 , Gd 2 Si 2 O 7 , Sm 2 Si 2 O 7  and Dy 2 Si 2 O 7 .   
     
     
         5 . The method of  claim 1 , further comprising coating the rare earth metal silicate layer with a rare earth metal containing oxide coating, wherein the rare earth metal containing oxide comprises at least one of yttrium oxide (Y 2 O 3 ), erbium oxide (Er 2 O 3 ), tantalum oxide (Ta 2 SiO 5 ), iridium oxide (Ir 2 O 3 ), rhodium oxide (Rh 2 O 3 ), lanthanum oxide (La 2 O 3 ), lutetium oxide (Lu 2 O 3 ), scandium oxide (Sc 2 O 3 ), gadolinium oxide (Gd 2 O 3 ), samarium oxide (Sm 2 O 3 ), dysprosium oxide (Dy 2 O 3 ) and combinations thereof. 
     
     
         6 . The method of  claim 1 , wherein forming the rare earth metal containing silicate coating comprises:
 depositing a multi-layer stack by alternately depositing layers of Y 2 O 3  and SiO 2 , and   annealing the multi-layer stack to form at least one of: a) a solid phase of a rare earth metal monosilicate or a solid phase of a rare earth metal disilicate, b) a double phases of a rare earth metal monosilicate and a rare earth metal disilicate, c) a mixed phase material of a rare earth metal monosilicate, yttria and silica, d) a mixed phase material of a rare earth metal disilicate, yttria and silica, and e) a mixed phase material of a rare earth metal monosilicate, a rare earth metal disilicate, yttria and silica.   
     
     
         7 . The method of  claim 6 , wherein depositing the multi-layer stack comprises:
 depositing at least one Y 2 O 3  layer using precursors of tris(N,N-bis(trimethylsilyl)amide)yttrium (III), yttrium (III)butoxide, tris(cyclopentadienyl)yttrium(III), or Y(thd)3 (thd=2,2,6,6-tetramethyl-3,5-heptanedionato) and a reactant comprising at least one of O 2 , H 2 O and O 3 , and   depositing at least one SiO 2  layer using precursors of as silane, dichlorosilane, 2,4,6,8-tetramethylcyclotetrasiloxane, dimethoxydimethylsilane, disilane, methylsilane, octamethylcyclotetrasiloxane, tris(isopropoxy)silanol, tris(tert-butoxy)silanol, tris(tert-pentoxy)silanol and a reactant comprising at least one of O 2 , H 2 O and O 3 .   
     
     
         8 . The method of  claim 7 , wherein each of the alternating layers in the multi-layer stack has a thickness of about 3 nm to about 300 nm. 
     
     
         9 . A method comprising:
 performing an atomic layer deposition process to deposit a rare earth metal containing silicate coating on a surface of a heater comprising aluminum nitride or a susceptor comprising graphite coated with silicon carbide, tantalum carbide or a combination thereof and   optionally, performing a PVD or PEPVD deposition process to deposit a thick rare earth metal silicate layer above or below the rare earth metal containing silicate coating,   wherein the rare earth metal containing silicate coating has a thickness of about 3 nm to about 20 μm, and   wherein the rare earth metal comprises at least one of yttrium erbium, tantalum, iridium, rhodium, lanthanum, lutetium, scandium, gadolinium, samarium, dysprosium, and combinations thereof.   
     
     
         10 . The method of  claim 9 , further comprising:
 forming a buffer layer on the surface of the heater prior to performing the atomic layer deposition process to deposit the rare earth metal containing silicate coating on the surface of the heater.   
     
     
         11 . The method of  claim 9 , wherein forming the rare earth metal containing silicate coating comprises:
 forming a multi-layer stack by alternately depositing layers of a rare earth metal monosilicate and a rare earth metal disilicate,   wherein the rare earth metal monosilicate comprises at least one of Y 2 SiO 5 , Er 2 SiO 5 , Ta 2 SiO 5 , Ir 2 SiO 5 , Rh 2 SiO 5 , La 2 SiO 5 , Lu 2 SiO 5 , Sc 2 SiO 5 , Gd 2 SiO 5 , Sm 2 SiO 5  and Dy 2 SiO 5 , and   wherein the rare earth metal disilcate comprises at least one of Y 2 Si 2 O 7 , Er 2 Si 2 O 7 , Ta 2 Si 2 O 7 , Ir 2 Si 2 O 7 , Rh 2 Si 2 O 7 , La 2 Si 2 O 7 , Lu 2 Si 2 O 7 , Sc 2 Si 2 O 7 , Gd 2 Si 2 O 7 , Sm 2 Si 2 O 7  and Dy 2 Si 2 O 7 .   
     
     
         12 . The method of  claim 9 , further comprising coating the rare earth metal silicate layer with a rare earth metal containing oxide coating, wherein the rare earth metal containing oxide comprises at least one of yttrium oxide (Y 2 O 3 ), erbium oxide (Er 2 O 3 ), tantalum oxide (Ta 2 SiO 5 ), iridium oxide (Ir 2 O 3 ), rhodium oxide (Rh 2 O 3 ), lanthanum oxide (La 2 O 3 ), lutetium oxide (Lu 2 O 3 ), scandium oxide (Sc 2 O 3 ), gadolinium oxide (Gd 2 O 3 ), samarium oxide (Sm 2 O 3 ), dysprosium oxide (Dy 2 O 3 ) and combinations thereof. 
     
     
         13 . The method of  claim 9 , wherein forming the rare earth metal containing silicate coating comprises:
 depositing a multi-layer stack by alternately depositing layers of Y 2 O 3  and SiO 2 ; and   annealing the multi-layer stack to form at least one of: a) a solid phase of a rare earth metal monosilicate or a solid phase of a rare earth metal disilicate, b) a double phases of a rare earth metal monosilicate and a rare earth metal disilicate, c) a mixed phase material of a rare earth metal monosilicate, yttria and silica, d) a mixed phase material of a rare earth metal disilicate, yttria and silica, and e) a mixed phase material of a rare earth metal monosilicate, a rare earth metal disilicate, yttria and silica.   
     
     
         14 . The method of  claim 13 , wherein depositing the multi-layer stack comprises:
 depositing at least one Y 2 O 3  layer using precursors of tris(N,N-bis(trimethylsilyl)amide)yttrium (III), yttrium (III)butoxide, tris(cyclopentadienyl)yttrium(III), or Y(thd)3 (thd=2,2,6,6-tetramethyl-3,5-heptanedionato) and a reactant comprising at least one of O 2 , H 2 O and O 3 , and   depositing at least one SiO 2  layer using precursors of as silane, dichlorosilane, 2,4,6,8-tetramethylcyclotetrasiloxane, dimethoxydimethylsilane, disilane, methylsilane, octamethylcyclotetrasiloxane, tris(isopropoxy)silanol, tris(tert-butoxy)silanol, tris(tert-pentoxy)silanol and a reactant comprising at least one of O 2 , H 2 O and O 3 .   
     
     
         15 . The method of  claim 14 , wherein each of the alternating layers in the multi-layer stack has a thickness of about 3 nm to about 300 nm. 
     
     
         16 . A method comprising:
 performing a deposition process to deposit a rare earth metal containing silicate coating on a surface of a chamber component for a processing chamber, wherein the rare earth metal containing silicate coating has a thickness of about 3 nm to about 250 μm; and   performing a PVD or PEPVD deposition process to deposit a thick rare earth metal silicate layer above or below the rare earth metal containing silicate coating,   wherein the rare earth metal containing silicate coating comprises at least one of yttrium monosilicate (Y 2 SiO 5 ), yttrium disilicate (Y 2 Si 2 O 7 ), erbium monosilicate (Er 2 SiO 5 ), erbium disilicate (Er 2 Si 2 O 7 ), tantalum monosilicate (Ta 2 SiO 5 ), tantalum disilicate (Ta 2 Si 2 O 7 ), iridium monosilicate (Ir 2 SiO 5 ), iridium disilicate (Ir 2 Si 2 O 7 ), rhodium monosilicate (Rh 2 SiO 5 ), rhodium disilicate (Rh 2 Si 2 O 7 ), lanthanum monosilicate (La 2 SiO 5 ), lanthanum disilicate (La 2 Si 2 O 7 ), lutetium monosilicate (Lu 2 SiO 5 ), lutetium disilicate (Lu 2 Si 2 O 7 ), scandium monosilicate (Sc 2 SiO 5 ), scandium disilicate (Sc 2 Si 2 O 7 ), gadolinium monosilicate (Gd 2 SiO 5 ), gadolinium disilicate (Gd 2 Si 2 O 7 ), samarium monosilicate (Sm 2 SiO 5 ), samarium disilicate (Sm 2 Si 2 O 7 ), dysprosium monosilicate (Dy 2 SiO 5 ), dysprosium disilicate (Dy 2 Si 2 O 7 ) and combinations thereof.   
     
     
         17 . The method of  claim 16 , wherein the chamber component comprises a material selected from the group consisting of aluminum nitride, graphite, silicon carbide, tantalum carbide and combinations thereof. 
     
     
         18 . The method of  claim 16 , wherein the chamber component is a heater or a susceptor for a processing chamber. 
     
     
         19 . The method of  claim 16 , wherein the chamber component comprises a material having a coefficient of thermal expansion (CTE) of about 4.0×10 −6 /K to about 6.5×10 −6 /K and wherein the rare earth metal containing silicate coating on the surface of the body has a CTE of about 4.5×10 −6 /K to about 7.0×10 −6 /K. 
     
     
         20 . The method of  claim 16 , wherein the rare earth metal containing silicate coating comprises a rare earth metal monosilicate and a rare earth metal disilicate at a volume ratio (monosilicate:disilicate) of about 1:20 to about 20:1.