US2022344330A1PendingUtilityA1

Field-Effect Transistors Having Transition Metal Dichalcogenide Channels and Methods of Manufacture

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Assignee: TAIWAN SEMICONDUCTOR MFG CO LTDPriority: Mar 16, 2015Filed: Jul 11, 2022Published: Oct 27, 2022
Est. expiryMar 16, 2035(~8.6 yrs left)· nominal 20-yr term from priority
Inventors:Yee-Chia YeoLing-Yen YehYuan-Chen Sun
H10P 14/3436H10P 14/203H10P 14/36H01L 29/24H01L 29/66795H01L 21/02614H01L 21/02658H01L 21/02568H01L 21/8256H01L 27/0886H01L 29/785H01L 29/66969H10D 99/00H10D 84/02H10D 62/80H10D 30/62H10D 30/024H10D 84/834
76
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Claims

Abstract

A transistor that is formed with a transition metal dichalcogenide material is provided. The transition metal dichalcogenide material is formed using a direct deposition process and patterned into one or more fins. A gate dielectric and a gate electrode are formed over the one or more fins. Alternatively, the transition metal dichalcogenide material may be formed using a deposition of a non-transition metal dichalcogenide material followed by a treatment to form a transition metal dichalcogenide material. Additionally, fins that utilized the transition metal dichalcogenide material may be formed with sidewalls that are either perpendicular to a substrate or else are sloped relative to the substrate.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A method of manufacturing a semiconductor device, the method comprising:
 placing a hard mask over a transition metal dichalcogenide precursor material over a substrate prior to a patterning of the transition metal dichalcogenide precursor material;   patterning the transition metal dichalcogenide precursor material to form a first fin over the substrate, wherein the patterning the transition metal dichalcogenide precursor material is performed with the hard mask in place, wherein the first fin comprises a top surface parallel with the substrate, and wherein the hard mask is present over the first fin when the forming the first fin is completed, the patterning exposing the substrate;   removing the hard mask from the first fin;   after the removing the hard mask, forming a first transition metal dichalcogenide material using at least a portion of a first sidewall of the first fin as a precursor material, a portion of the substrate remaining exposed after the forming the first transition metal dichalcogenide material; and   forming a first gate dielectric located over the top surface and adjacent to the first transition metal dichalcogenide material.   
     
     
         2 . The method of  claim 1 , wherein the removing the hard mask is performed at least in part with a wet etching process. 
     
     
         3 . The method of  claim 1 , wherein the forming the first transition metal dichalcogenide material reacts a reactant with each exposed surface of the precursor material. 
     
     
         4 . The method of  claim 1 , wherein the forming the first transition metal dichalcogenide material forms a continuous layer of the first transition metal dichalcogenide material along an outer perimeter of the transition metal dichalcogenide precursor material. 
     
     
         5 . The method of  claim 1 , wherein the forming the first transition metal dichalcogenide material reacts a reactant with each a surface of the precursor material previously covered by the hard mask. 
     
     
         6 . The method of  claim 1 , wherein the transition metal dichalcogenide precursor material comprises molybdenum. 
     
     
         7 . The method of  claim 1 , wherein the forming the first transition metal dichalcogenide material uses sulfur. 
     
     
         8 . A method of manufacturing a semiconductor device, the method comprising:
 depositing a transition metal dichalcogenide precursor material onto a substrate;   placing a hard mask over the transition metal dichalcogenide precursor material;   patterning the transition metal dichalcogenide precursor material into a fin, wherein the patterning the transition metal dichalcogenide precursor material are performed with the hard mask in place;   removing the hard mask;   after the removing the hard mask, forming a transition metal dichalcogenide material from the transition metal dichalcogenide precursor material, wherein a portion of the substrate is exposed after the forming the transition metal dichalcogenide material; and   depositing a gate dielectric and a gate electrode over the fin after the forming the transition metal dichalcogenide material.   
     
     
         9 . The method of  claim 8 , wherein the removing the hard mask is performed at least in part with a wet etching process. 
     
     
         10 . The method of  claim 8 , wherein the forming the transition metal dichalcogenide material reacts a reactant with each exposed surface of the transition metal dichalcogenide precursor material. 
     
     
         11 . The method of  claim 8 , wherein the forming the transition metal dichalcogenide material forms a continuous layer of the transition metal dichalcogenide material along an outer perimeter of the transition metal dichalcogenide precursor material. 
     
     
         12 . The method of  claim 8 , wherein the forming the transition metal dichalcogenide material reacts a reactant with each a surface of the transition metal dichalcogenide precursor material previously covered by the hard mask. 
     
     
         13 . The method of  claim 8 , wherein the transition metal dichalcogenide precursor material comprises molybdenum. 
     
     
         14 . The method of  claim 8 , wherein the forming the transition metal dichalcogenide material uses sulfur. 
     
     
         15 . A method of manufacturing a semiconductor device, the method comprising:
 forming a hard mask over a transition metal dichalcogenide precursor material over a substrate;   patterning a first fin from the transition metal dichalcogenide precursor material while the hard mask is present, wherein the first fin comprises a top surface parallel with the substrate and a sidewall terminating at the substrate;   removing the hard mask;   after the removing the hard mask, reacting the transition metal dichalcogenide precursor material with a second precursor to form a first transition metal dichalcogenide material located along a first sidewall of the first fin, the first transition metal dichalcogenide material having a sidewall terminating at the substrate; and   forming a first gate dielectric located over the top surface and adjacent to the first transition metal dichalcogenide material.   
     
     
         16 . The method of  claim 15 , wherein the removing the hard mask is performed at least in part with a wet etching process. 
     
     
         17 . The method of  claim 15 , wherein the reacting the transition metal dichalcogenide precursor material reacts the second precursor with each exposed surface of the transition metal dichalcogenide precursor material. 
     
     
         18 . The method of  claim 15 , wherein the reacting the transition metal dichalcogenide precursor material forms a continuous layer of the first transition metal dichalcogenide material along an outer perimeter of the transition metal dichalcogenide precursor material. 
     
     
         19 . The method of  claim 15 , wherein the reacting the transition metal dichalcogenide precursor material reacts a reactant with each surface of the transition metal dichalcogenide precursor material previously covered by the hard mask. 
     
     
         20 . The method of  claim 15 , wherein the transition metal dichalcogenide precursor material comprises molybdenum.

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