Euv light source and apparatus for lithography

Abstract

An extreme ultra violet (EUV) radiation source apparatus includes a collector mirror, a target droplet generator for generating a tin (Sn) droplet, a rotatable debris collection device, one or more coils for generating an inductively coupled plasma (ICP), a gas inlet for providing a source gas for the ICP, and a chamber enclosing at least the collector mirror and the rotatable debris collection device. The gas inlet and the one or more coils are configured such that the ICP is spaced apart from the collector mirror.

What is claimed is: 
     
         1 . An extreme ultra violet (EUV) radiation source apparatus, comprising:
 a collector mirror;   a target droplet generator for generating a tin (Sn) droplet;   a rotatable debris collection device;   one or more coils for generating an inductively coupled plasma (ICP);   a gas inlet for providing a source gas for the ICP; and   a chamber enclosing at least the collector mirror and the rotatable debris collection device,   wherein the gas inlet and the one or more coils are configured such that the ICP is spaced apart from the collector mirror.   
     
     
         2 . The EUV radiation source apparatus of  claim 1 , wherein the source gas includes one or more of He, Ar, Xe, Cl 2 , H 2 , O 2 , SiH 4 , SiCl 4  and SiH 2 Cl 2 . 
     
     
         3 . The EUV radiation source apparatus of  claim 1 , wherein the source gas is a Cl containing gas. 
     
     
         4 . The EUV radiation source apparatus of  claim 1 , further comprising a lower cone provided between the rotatable debris collection device and an EUV output port,
 wherein at least one coil surrounds or covers the lower cone.   
     
     
         5 . The EUV radiation source apparatus of  claim 4 , wherein the gas inlet for providing the source gas is located at a position between the lower cone and the EUV output port. 
     
     
         6 . The EUV radiation source apparatus of  claim 1 , wherein at least one coil surrounds or covers the rotatable debris collection device. 
     
     
         7 . The EUV radiation source apparatus of  claim 6 , wherein the gas inlet for providing the source gas is located at a position between the rotatable debris collection device and the collector mirror. 
     
     
         8 . The EUV radiation source apparatus of  claim 7 , further comprising a lower cone provided between the rotatable debris collection device and an EUV output port,
 wherein a gas outlet port for exhausting the source gas is provided at at least one of a position between the rotatable debris collection device and the lower cone and a position between the lower cone and the EUV output port.   
     
     
         9 . The EUV radiation source apparatus of  claim 1 , further comprising an AC power source for supplying AC power to the one or more coils. 
     
     
         10 . The EUV radiation source apparatus of  claim 9 , wherein:
 two or more coils are provided, and   current for each of the two or more coils is independently tunable.   
     
     
         11 . The EUV radiation source apparatus of  claim 10 , wherein a phase of the current flowing in one of the two or more coils is different by 180 degrees from a phase of the current flowing in another one of the two or more coils. 
     
     
         12 . An extreme ultra violet (EUV) radiation source apparatus, comprising:
 a collector mirror;   a target droplet generator for generating a tin (Sn) droplet;   a rotatable debris collection device;   one or more coils for generating an inductively coupled plasma (ICP);   a gas inlet for providing a source gas including one or more of a Si containing gas and a Zr containing gas, for the ICP; and   a chamber enclosing at least the collector mirror and the rotatable debris collection device.   
     
     
         13 . The EUV radiation source apparatus of  claim 12 , wherein the source gas includes zirconium tetra-tert-butoxide. 
     
     
         14 . The EUV radiation source apparatus of  claim 12 , wherein at least one coil surrounds or covers a backside of the collector mirror. 
     
     
         15 . The EUV radiation source apparatus of  claim 12 , wherein at least one coil surrounds or covers the rotatable debris collection device. 
     
     
         16 . The EUV radiation source apparatus of  claim 12 , further comprising a lower cone provided between the rotatable debris collection device and an EUV output port,
 wherein at least one coil surrounds or covers the lower cone.   
     
     
         17 . An extreme ultra violet (EUV) radiation source apparatus, comprising:
 a collector mirror;   a target droplet generator for generating a tin (Sn) droplet;   a rotatable debris collection device;   one or more coils for generating an inductively coupled plasma (ICP);   a first gas inlet and a second gas inlet for providing a source gas for the ICP;   a gas outlet for exhaust the source gas; and   a chamber enclosing at least the collector mirror and the rotatable debris collection device,   wherein the gas outlet is located between the first and second gas inlets.   
     
     
         18 . The EUV radiation source apparatus of  claim 17 , wherein the source gas includes one or more of He, Ar, Xe, Cl 2 , H 2 , O 2 , SiH 4 , SiCl 4  and SiH 2 Cl 2 . 
     
     
         19 . The EUV radiation source apparatus of  claim 17 , wherein the source gas is a Cl containing gas. 
     
     
         20 . The EUV radiation source apparatus of  claim 17 , wherein the first gas inlet is located at a lower cone.