Semiconductor device

Abstract

A semiconductor device includes a substrate, an oxide semiconductor film on the substrate, a first gate structure on the oxide semiconductor film and a contact that is in contact with the oxide semiconductor film, the contact being disposed on a boundary surface with the oxide semiconductor film, and including a metal oxide film that includes a transition metal.

What is claimed is: 
     
         1 . A semiconductor device, comprising:
 a substrate;   an oxide semiconductor film arranged on the substrate and including a first side and a second side opposite the first side;   a gate electrode on the first side of the oxide semiconductor film;   a gate insulating film between the first side of the oxide semiconductor film and the gate electrode;   a metal pattern on the second side of the oxide semiconductor film; and   a metal oxide film between the second side of the oxide semiconductor film and the metal pattern, wherein:   the metal pattern includes a transition metal, and   a metal constituting the metal oxide film is the same metal as the transition metal constituting the metal pattern.   
     
     
         2 . The semiconductor device of  claim 1 , wherein:
 the transition metal of the metal pattern includes at least one of tantalum (Ta), titanium (Ti), or molybdenum (Mo), and   the metal oxide film includes at least one of tantalum oxide (TaOx), titanium oxide (TiOx), or molybdenum oxide (MoOx).   
     
     
         3 . The semiconductor device of  claim 1 , wherein the oxide semiconductor film includes one of indium oxide, tin oxide, zinc oxide, In-Zn-based oxide (IZO), Sn-Zn-based oxide, Al-Zn-based oxide, Zn-Mg-based oxide, Sn-Mg-based oxide, In-Mg-based oxide, In-Ga-based oxide (IGO), In-Ga-Zn-based oxide (IGZO), In-Sn-based oxide (ITO), In-Ga-Sn-based oxide (IGTO), In-Al-Zn-based oxide, In-Sn-Zn-based oxide, Sn-Ga-Zn-based oxide, Al-Ga-Zn-based oxide, Sn-Al-Zn-based oxide, In-Hf-Zn-based oxide, In-La-Zn-based oxide, In-Ce-Zn-based oxide, In-Pr-Zn-based oxide, In-Nd-Zn-based oxide, In-Sm-Zn-based oxide, In-Eu-Zn-based oxide, In-Gd-Zn-based oxide, In-Tb-Zn-based oxide, In-Dy-Zn-based oxide, In-Ho-Zn-based oxide, In-Er-Zn-based oxide, In-Tm-Zn-based oxide, In-Yb-Zn-based oxide, In-Lu-Zn-based oxide, In-Sn-Ga-Zn-based oxide, In-Hf-Ga-Zn-based oxide, In-Al-Ga-Zn-based oxide, In-Sn-Al-Zn-based oxide, In-Sn-Hf-Zn-based oxide, In-Hf-Al-Zn-based oxide, and Ba-Sn-based oxide. 
     
     
         4 . The semiconductor device of  claim 1 , wherein the gate electrode includes at least one of titanium nitride (TiN), tantalum carbide (TaC), tantalum nitride (TaN), titanium silicon nitride (TiSiN), tantalum silicon nitride (TaSiN), tantalum titanium nitride (TaTiN), titanium aluminum nitride (TiAlN), tantalum aluminum nitride (TaAlN), tungsten nitride (WN), ruthenium (Ru), titanium aluminum (TiAl), titanium aluminum carbonitride (TiAlC—N), titanium aluminum carbide (TiAlC), titanium carbide (TiC), tantalum carbonitride (TaCN), tungsten (W), aluminum (Al), copper (Cu), cobalt (Co), titanium (Ti), tantalum (Ta), nickel (Ni), platinum (Pt), nickel platinum (Ni-Pt), niobium (Nb), niobium nitride (NbN), niobium carbide (NbC), molybdenum (Mo), molybdenum nitride (MoN), molybdenum carbide (MoC), tungsten carbide (WC), rhodium (Rh), palladium (Pd), iridium (Ir), osmium (Os), silver (Ag), gold (Au), zinc (Zn), vanadium (V), impurity-doped polysilicon, impurity-doped polysilicon germanium, a conductive metal oxide thereof, or a conductive metal oxynitride thereof. 
     
     
         5 . The semiconductor device of  claim 1 , wherein:
 the gate insulating film includes at least one of silicon oxide, silicon oxynitride, silicon nitride, or a high-dielectric constant material having a dielectric constant higher than that of silicon oxide, and   the high-dielectric constant material includes one or more of hafnium oxide, hafnium silicon oxide, hafnium aluminum oxide, lanthanum oxide, lanthanum aluminum oxide, zirconium oxide, zirconium silicon oxide, tantalum oxide, titanium oxide, barium strontium titanium oxide, barium titanium oxide, strontium titanium oxide, yttrium oxide, aluminum oxide, lead scandium tantalum oxide, or lead zinc niobate.   
     
     
         6 . The semiconductor device of  claim 1 , wherein the oxide semiconductor film includes a polycrystalline region. 
     
     
         7 . The semiconductor device of  claim 1 , wherein one of the metal pattern and the metal oxide film is not electrically or physically connected to any conductive line. 
     
     
         8 . The semiconductor device of  claim 1 , wherein the metal oxide film contacts the second side of the oxide semiconductor film. 
     
     
         9 . The semiconductor device of  claim 1 , further comprising a conductive line that is between the substrate and the oxide semiconductor film. 
     
     
         10 . The semiconductor device of  claim 9 , wherein one of the metal pattern and the metal oxide film is not physically connected to the gate electrode and the conductive line. 
     
     
         11 . The semiconductor device of  claim 1 , wherein one of the metal pattern and the metal oxide film is opposite to the gate electrode with respect to the oxide semiconductor film. 
     
     
         12 . The semiconductor device of  claim 9 , wherein:
 one of the oxide semiconductor film and the gate electrode extends in a first direction, and   the conductive line extends in a second direction that is perpendicular to the first direction.   
     
     
         13 . The semiconductor device of  claim 6 , wherein the metal oxide film contacts the polycrystalline region of the oxide semiconductor film. 
     
     
         14 . A semiconductor device, comprising:
 a substrate;   a first insulating film on the substrate;   an oxide semiconductor film on the first insulating film, the oxide semiconductor film including a first side and a second side opposite the first side, wherein the first side of the oxide semiconductor film is adjacent to the first insulating film;   a gate structure on the second side of the oxide semiconductor film, the gate structure including a gate insulating film, a gate electrode that is on the gate insulating film, a gate capping pattern that is on the gate electrode, and a gate spacer that contacts a side surface of the gate electrode;   a second insulating film on the gate structure;   a metal pattern passing through the second insulating film and arranged on the second side of the oxide semiconductor film; and   a metal oxide film between the second side of the oxide semiconductor film and the metal pattern, wherein:   the metal pattern includes a transition metal,   a metal constituting the metal oxide film is the same metal as the transition metal constituting the metal pattern, and   the metal oxide film contacts the second side of the oxide semiconductor film.   
     
     
         15 . The semiconductor device of  claim 14 , wherein:
 the transition metal of the metal pattern includes at least one of tantalum (Ta), titanium (Ti), or molybdenum (Mo), and   the metal oxide film includes at least one of tantalum oxide (TaOx), titanium oxide (TiOx), or molybdenum oxide (MoOx).   
     
     
         16 . The semiconductor device of  claim 14 , wherein the oxide semiconductor film includes one of indium oxide, tin oxide, zinc oxide, In-Zn-based oxide (IZO), Sn-Zn-based oxide, Al-Zn-based oxide, Zn-Mg-based oxide, Sn-Mg-based oxide, In-Mg-based oxide, In-Ga-based oxide (IGO), In-Ga-Zn-based oxide (IGZO), In-Sn-based oxide (ITO), In-Ga-Sn-based oxide (IGTO), In-Al-Zn-based oxide, In-Sn-Zn-based oxide, Sn-Ga-Zn-based oxide, Al-Ga-Zn-based oxide, Sn-Al-Zn-based oxide, In-Hf-Zn-based oxide, In-La-Zn-based oxide, In-Ce-Zn-based oxide, In-Pr-Zn-based oxide, In-Nd-Zn-based oxide, In-Sm-Zn-based oxide, In-Eu-Zn-based oxide, In-Gd-Zn-based oxide, In-Tb-Zn-based oxide, In-Dy-Zn-based oxide, In-Ho-Zn-based oxide, In-Er-Zn-based oxide, In-Tm-Zn-based oxide, In-Yb-Zn-based oxide, In-Lu-Zn-based oxide, In-Sn-Ga-Zn-based oxide, In-Hf-Ga-Zn-based oxide, In-Al-Ga-Zn-based oxide, In-Sn-Al-Zn-based oxide, In-Sn-Hf-Zn-based oxide, In-Hf-Al-Zn-based oxide, and Ba-Sn-based oxide. 
     
     
         17 . The semiconductor device of  claim 14 , wherein the oxide semiconductor film includes a polycrystalline region. 
     
     
         18 . The semiconductor device of  claim 17 , wherein the metal oxide film contacts the polycrystalline region of the oxide semiconductor film. 
     
     
         19 . A semiconductor device, comprising:
 a substrate;   an oxide semiconductor film on the substrate, the oxide semiconductor film including an amorphous region and a polycrystalline region that is on the amorphous region;   a gate electrode fully buried in the polycrystalline region of the oxide semiconductor film;   a storage plug on the polycrystalline region of the oxide semiconductor film;   a storage pad on the storage plug; and   a capacitor on the storage pad, wherein:   the storage plug contacts the polycrystalline region of the oxide semiconductor film, and   the gate electrode is spaced apart from the amorphous region of the oxide semiconductor film.   
     
     
         20 . The semiconductor device of  claim 19 , wherein the oxide semiconductor film includes one of indium oxide, tin oxide, zinc oxide, In-Zn-based oxide (IZO), Sn-Zn-based oxide, Al-Zn-based oxide, Zn-Mg-based oxide, Sn-Mg-based oxide, In-Mg-based oxide, In-Ga-based oxide (IGO), In-Ga-Zn-based oxide (IGZO), In-Sn-based oxide (ITO), In-Ga-Sn-based oxide (IGTO), In-Al-Zn-based oxide, In-Sn-Zn-based oxide, Sn-Ga-Zn-based oxide, Al-Ga-Zn-based oxide, Sn-Al-Zn-based oxide, In-Hf-Zn-based oxide, In-La-Zn-based oxide, In-Ce-Zn-based oxide, In-Pr-Zn-based oxide, In-Nd-Zn-based oxide, In-Sm-Zn-based oxide, In-Eu-Zn-based oxide, In-Gd-Zn-based oxide, In-Tb-Zn-based oxide, In-Dy-Zn-based oxide, In-Ho-Zn-based oxide, In-Er-Zn-based oxide, In-Tm-Zn-based oxide, In-Yb-Zn-based oxide, In-Lu-Zn-based oxide, In-Sn-Ga-Zn-based oxide, In-Hf-Ga-Zn-based oxide, In-Al-Ga-Zn-based oxide, In-Sn-Al-Zn-based oxide, In-Sn-Hf-Zn-based oxide, In-Hf-Al-Zn-based oxide, and Ba-Sn-based oxide.