US2022336531A1PendingUtilityA1

Semiconductor memory device and method of manufacturing the same

Assignee: KIOXIA CORPPriority: Aug 31, 2015Filed: Jul 5, 2022Published: Oct 20, 2022
Est. expiryAug 31, 2035(~9.1 yrs left)· nominal 20-yr term from priority
Inventors:Takuya Konno
G11C 13/0007G11C 13/0002G11C 2213/51G11C 2213/71H01L 27/2463H01L 45/085H01L 45/1675H01L 45/1266H01L 45/1608H01L 45/145H10N 70/245H10N 70/883H10B 63/84H10N 70/063H10N 70/8416H10N 70/8833H10B 63/80H10N 70/021H10N 70/826
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Claims

Abstract

According to an embodiment, a semiconductor memory device comprises first wiring lines, second wiring lines, and first variable resistance elements. The first wiring lines are arranged in a first direction and have as their longitudinal direction a second direction intersecting the first direction. The second wiring lines are arranged in the second direction and have the first direction as their longitudinal direction. The first variable resistance elements are respectively provided at intersections of the first wiring lines and the second wiring lines. In addition, this semiconductor memory device comprises a first contact extending in a third direction that intersects the first direction and second direction and having one end thereof connected to the second wiring line. The other end and a surface intersecting the first direction of this first contact are covered by a first conductive layer.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A memory device comprising:
 a substrate;   a first wiring extending in a first direction;   a second wiring being located away from the first wiring and being located closer to the first wiring than the substrate in a second direction crossing the first direction and perpendicular to the substrate   a third wiring being provided between the first wiring and the second wiring, the third wiring extending in a third direction crossing the first and the second directions;   a first variable resistance element being provided between the first wiring and the third wiring;   a second variable resistance element being provided between the second wiring and the third wiring;   a first contact extending in the second direction, and one end of the first contact being connected to the first wiring, the other end of the first contact being located closer to the substrate than the third wiring in the second direction;   a second contact being connected to the first contact and extending in the second direction, the second contact being located below the second wiring;   a third contact extending in the second direction, and one end of the third contact being connected to the second wiring;   a fourth contact extending in the second direction, and one end of the fourth contact being connected to the third wiring, the other end of the third contact being located closer to the substrate than the second wiring in the second direction; and   a fifth contact being connected to the fourth contact and extending in the second direction.

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