Metal etching with in situ plasma ashing

Abstract

An apparatus for perform metal etching and plasma ashing includes: a processing chamber having an enclosed area; an electrostatic chuck disposed in the enclosed area and configured to secure a wafer, the electrostatic chuck connected with a bias power; at least one coil connected with a source power; a etchant conduit configured provide an etchant to a metal of the wafer within the processing chamber in accordance with a photoresist mask of the wafer; and a gas intake conduit connected with a gas source, wherein the gas intake conduit is configured to supply the processing chamber with a gas from the gas source during performance of plasma ashing within the processing chamber.

What is claimed is: 
     
         1 . A processing chamber, comprising:
 an electrostatic chuck configured to secure a wafer, the electrostatic chuck connected with a bias power;   at least one coil connected with a source power;   an etchant intake conduit configured provide an etchant to a metal of the wafer within the processing chamber in accordance with a photoresist mask of the wafer; and   a gas intake conduit connected with a gas source, wherein the gas intake conduit is configured to supply the processing chamber with a gas from the gas source during performance of plasma ashing within the processing chamber.   
     
     
         2 . The processing chamber of  claim 1 , wherein the processing chamber is part of a semiconductor processing workstation with a loadlock for ingress or egress of the wafer. 
     
     
         3 . The processing chamber of  claim 2 , wherein the semiconductor processing workstation is configured to move the wafer from an alignment chamber to the processing chamber, and then to the loadlock for egress of the wafer from the processing chamber. 
     
     
         4 . The processing chamber of  claim 1 , wherein the processing chamber comprises a suction conduit configured to remove ash produced during the plasma ashing from the processing chamber via suction forces. 
     
     
         5 . The processing chamber of  claim 1 , wherein the metal comprises aluminum. 
     
     
         6 . The processing chamber of  claim 1 , wherein the metal comprises aluminum with a top layer of titanium nitride (TiN). 
     
     
         7 . An apparatus, comprising:
 a processing chamber comprising an enclosed area in which both metal etching and plasma ashing are performed in situ, the enclosed area configured to receive a wafer therein;   an etchant conduit coupled to the processing chamber and configured to provide an etchant into the enclosed area for etching a metal layer of the wafer in accordance with a photoresist mask placed on the wafer when the wafer is positioned within the enclosed area;   an ashing conduit coupled to the processing chamber and configured to provide an ashing gas into the enclosed area to remove photoresist material after etching is completed; and   a power source coupled to the processing chamber configured to provide a predetermined power to at least one coil within the enclosed area during an ashing process.   
     
     
         8 . The apparatus of  claim 7 , wherein the predetermined power is greater than 1600 watts. 
     
     
         9 . The apparatus of  claim 7 , wherein the processing chamber comprises a wall that separates the at least one coil from the metal layer. 
     
     
         10 . The apparatus of  claim 7 , wherein the ashing gas is at least one of: pure O 2 , pure N 2 , and a mixture of N 2  and O 2 . 
     
     
         11 . The apparatus of  claim 10 , wherein the ashing gas comprises 0 to 10 percent of O 2 . 
     
     
         12 . The apparatus of  claim 7 , wherein the processing chamber further comprises an electrostatic chuck for supporting the wafer within the enclosed area. 
     
     
         13 . The apparatus of  claim 12 , wherein the electrostatic chuck is biased with a predetermined bias power. 
     
     
         14 . The apparatus of  claim 13 , wherein the predetermined bias power is 0 watts during a plasma ashing process. 
     
     
         15 . An apparatus, comprising:
 a loadlock;   a processing chamber comprising an enclosed area in which both metal etching and plasma ashing are performed in situ, the enclosed area configured to receive a wafer therein, and the processing chamber further comprising a wafer chuck configured to support the wafer within the enclosed area;   an etchant conduit coupled to the processing chamber and configured to provide an etchant into the enclosed area for etching a metal layer of the wafer in accordance with a photoresist mask placed on the wafer when the wafer is positioned within the enclosed area;   an ashing conduit coupled to the processing chamber and configured to provide an ashing gas into the enclosed area to remove photoresist material after etching is completed;   a power source coupled to the processing chamber configured to provide a predetermined power to at least one coil within the enclosed area during an ashing process; and   a robotic arm configured to transfer the wafer from the loadlock onto the wafer chuck in the enclosed area of the processing.   
     
     
         16 . The apparatus of  claim 15 , wherein the processing chamber comprises a wall that separates the at least one coil from the metal layer. 
     
     
         17 . The apparatus of  claim 15 , wherein the wafer chuck comprises an electrostatic chuck for supporting the wafer within the enclosed area. 
     
     
         18 . The apparatus of  claim 17 , wherein the electrostatic chuck is biased with a predetermined bias power. 
     
     
         19 . The apparatus of  claim 18 , wherein the predetermined bias power is 0 watts during a plasma ashing process. 
     
     
         20 . The apparatus of  claim 15 , wherein the loadlock is configured to receive the wafer from an external automated material handling system.