Metal component and manufacturing method thereof and process chamber having the metal component

Abstract

This invention relates to a metal component, a manufacturing method thereof, and a process chamber having the metal component, and particularly to a metal component useful in a display or semiconductor manufacturing process, a manufacturing method thereof, and a process chamber having the metal component, wherein among addition elements of an aluminum alloy that constitutes the metal substrate of the metal component, the addition element existing on the surface thereof is removed, and a barrier layer having no pores is formed, thereby solving problems attributable to a conventional anodized film having a porous layer and attributable to the addition element in the form of particles on the surface of the metal substrate.

What is claimed is: 
     
         1 . A metal internal component provided to an inside of a process chamber into which a process gas is supplied, wherein the metal internal component contacts with a plasma of the process gas, the metal internal component comprising:
 a metal substrate composed of an aluminum alloy containing aluminum and addition elements, wherein an upper surface of the metal substrate comprises plane regions which are on a plane, and concave regions formed on the plane, the concave regions being recessed on the plane; and   an anodized barrier layer comprising anodized aluminum (Al 2 O 3 ) formed by anodizing the aluminum alloy,   wherein the anodized barrier layer does not have a porous layer within the anodized barrier layer,   wherein the concave regions of the metal substrate each have a shape recessed in an inward direction of the metal substrate from the plane,   wherein the concave regions of the metal substrate have the recessed shape formed by removing first addition elements among the addition elements from the metal substrate, the first addition elements having been exposed into air from the metal substrate, so that surfaces of the concave regions of the metal substrate have the aluminum without the first addition elements.   
     
     
         2 . The metal internal component of  claim 1 , wherein the aluminum alloy is a 6000 series aluminum alloy, and the at least one of the addition elements removed from the upper surface of the metal substrate includes silicon (Si). 
     
     
         3 . The metal internal component of  claim 1 , wherein the aluminum alloy is a 5000 series aluminum alloy, and the at least one of the addition elements removed from the upper surface of the metal substrate includes magnesium (Mg). 
     
     
         4 . The metal internal component of  claim 1 , wherein the addition elements comprise one of silicon (Si), iron (Fe), copper (Cu), manganese (Mn), magnesium (Mg), zinc (Zn), chromium (Cr), and titanium (Ti). 
     
     
         5 . The metal internal component of  claim 1 , wherein the process chamber is one of a CVD (Chemical Vapor Deposition) process chamber a dry-etching process chamber. 
     
     
         6 . The metal internal component of  claim 1 , wherein the anodized aluminum (Al2O3) is continuously formed with a predetermined thickness on the entire upper surface of the metal substrate including the plane regions and the concave regions. 
     
     
         7 . The metal internal component of  claim 1 , wherein the anodized barrier layer includes concave portions provided on an upper surface of the anodized barrier layer, each of the concave portions of the anodized barrier layer having a shape corresponding to the recessed shape of each of the concave regions of the metal substrate 
     
     
         8 . The metal internal component of  claim 1 , wherein a first portion of the anodized barrier layer is formed on the upper surface of the metal substrate when current is allowed to flow to the metal substrate, and a second portion of the anodized barrier layer is grown from the first portion of the anodized barrier layer until an increased voltage reaches a certain voltage.