Solid-state imaging device and electronic apparatus

Abstract

A solid-state imaging device includes a plurality of pixels each of which includes a photoelectric conversion unit that generates charges by photoelectrically converting light, and a transistor that reads a pixel signal of a level corresponding to the charges generated in the photoelectric conversion unit. A phase difference pixel which is at least a part of the plurality of pixels is configured in such a manner that the photoelectric conversion unit is divided into a plurality of photoelectric conversion units and an insulated light shielding film is embedded in a region for separating the plurality of photoelectric conversion units, which are divided, from each other.

What is claimed is: 
     
         1 . A light detecting device comprising:
 a pixel comprising:
 a microlens disposed above a substrate; 
 a first photoelectric conversion region disposed in the substrate, the first photoelectric conversion region being configured to receive light through the micorolens; and 
 a second photoelectric conversion region disposed in the substrate, the second photoelectric conversion region being configured to receive light through the micorolens, 
 wherein a trench is formed in the substrate, and, in a plan view, at least a part of the trench is between the first photoelectric conversion region and the second photoelectric conversion region. 
   
     
     
         2 . The light detecting device according to  claim 1 , wherein the trench is formed at a light incident surface of the substrate. 
     
     
         3 . The light detecting device according to  claim 1 , further comprising a fixed charge film disposed in the trench. 
     
     
         4 . The light detecting device according to  claim 1 , further comprising an insulating film disposed in the trench. 
     
     
         5 . The light detecting device according to  claim 1 , wherein, in a plan view, the trench has a cross shape. 
     
     
         6 . The light detecting device according to  claim 1 , further comprising a floating diffusion electrically connected to each of the first and second photoelectric conversion regions through a first transfer transistor and a second transfer transistor, respectively. 
     
     
         7 . The light detecting device according to  claim 1 , wherein the first photoelectric conversion region and the second photoelectric conversion region are configured to receive light of a first color. 
     
     
         8 . The light detecting device according to  claim 1 , wherein, in a plan view, a first dimension of the first photoelectric conversion region is larger than a second dimension of the first photoelectric conversion region, wherein the first dimension is parallel to the part of the trench and perpendicular to the second dimension. 
     
     
         9 . The light detecting device according to  claim 8 , wherein, in a plan view, a third dimension of the second photoelectric conversion region is larger than a fourth dimension of the second photoelectric conversion region, wherein the third dimension is parallel to the part of the trench and perpendicular to the fourth dimension. 
     
     
         10 . An electronic apparatus comprising:
 a lens;   a signal processor; and   a light detecting device comprising a pixel comprising:
 a microlens disposed above a substrate; 
 a first photoelectric conversion region disposed in the substrate, the first photoelectric conversion region being configured to receive light through the micorolens; and 
 a second photoelectric conversion region disposed in the substrate, the second photoelectric conversion region being configured to receive light through the micorolens, 
 wherein a trench is formed in the substrate, and, in a plan view, at least a part of the trench is between the first photoelectric conversion region and the second photoelectric conversion region.