System and method for protecting a surface from uv radiation

Abstract

A system for and method of protecting a polymer from UV degradation includes impinging ultraviolet (“UV”) radiation from an artificial UV source onto an interior object, the interior object comprising: i) a polymer substrate; and ii) a continuous inorganic film on the polymer substrate. The continuous inorganic film protects the polymer substrate from the ultraviolet radiation.

What is claimed is: 
     
         1 . A UV radiation disinfection system, comprising:
 an interior object comprising: i) a polymer substrate; and ii) a continuous inorganic film on the polymer substrate; and   an artificial UV source directed so as to impinge ultraviolet (“UV”) radiation onto the interior object when the artificial UV source is powered on, the artificial UV source being designed to emit radiation at a UVC wavelength suitable for disinfection,   wherein the continuous inorganic film has a property of absorbing UV radiation at the UVC wavelength.   
     
     
         2 . The system of  claim 1 , wherein the artificial UV source emits radiation having a wavelength ranging from about 180 nm to about 280 nm. 
     
     
         3 . The system of  claim 1 , wherein the artificial UV source is a UVC LED, an Hg vapor lamp, or an excimer lamp. 
     
     
         4 . The system of  claim 1 , wherein the interior object is indoors and is a wall, counter, sink, handle, faucet, toilet, appliance or floor. 
     
     
         5 . The system of  claim 1 , wherein the polymer substrate comprises a polymer chosen from epoxies, polyurethanes, polyethylene, polypropylene, Polyethylene terephthalate (PET), Polyether ether ketone (PEEK), polyetherketoneketone (PEKK), Acrylonitrile butadiene styrene (ABS), polyvinylchloride (PVC), thermoplastic olefins (TPO), polytetrafluoroethylene, polyvinylfluoride (PVF), and silicones, or any combination thereof. 
     
     
         6 . The system of  claim 1 , wherein the continuous inorganic film is a semiconductor having a bandgap that is greater than 3.1 eV and less than or equal to 6.9 eV. 
     
     
         7 . The system of  claim 6 , wherein the semiconductor comprises a material that is not zinc oxide. 
     
     
         8 . The system of  claim 6 , wherein the semiconductor comprises a material chosen from diamond, lithium niobite, tin dioxide, nickel(II) oxide, zinc sulfide, boron arsenide, gallium nitride, silicon carbide, 4H-SiC, titanium dioxide, anatase, fluorinated tin oxide, indium tin oxide and mixtures thereof. 
     
     
         9 . The system of  claim 1 , wherein the continuous inorganic film is an insulator. 
     
     
         10 . The system of  claim 9 , wherein the insulator is chosen from diamond-like carbon, indium oxide, chromium nitride, aluminosilicate glass, borosilicate glass and borosilicate-lime glass. 
     
     
         11 . The system of  claim 1 , wherein the interior object further comprises a barrier layer over the continuous inorganic film. 
     
     
         12 . The system of  claim 1 , wherein the interior object is positioned in any one of an aircraft, a spacecraft, a bus, a recreational vehicle, a boat, a rail car and a building. 
     
     
         13 . An interior object comprising:
 a polymer substrate; and   a continuous inorganic film on the polymer substrate, the continuous inorganic film having a property of absorbing UV radiation at a UVC wavelength suitable for disinfection.   
     
     
         14 . The interior object of  claim 13 , wherein the interior object is indoors and is a wall, counter, sink, handle, faucet, toilet, appliance or floor. 
     
     
         15 . The interior object of  claim 13 , wherein the polymer substrate comprises a polymer chosen from epoxies, polyurethanes, polyethylene, polypropylene, Polyethylene terephthalate (PET), Polyether ether ketone (PEEK), polyetherketoneketone (PEKK), Acrylonitrile butadiene styrene (ABS), polyvinylchloride (PVC), thermoplastic olefins (TPO), polytetrafluoroethylene, polyvinylfluoride (PVF) and silicones, or any combination thereof. 
     
     
         16 . The interior object of  claim 13 , wherein the continuous inorganic film is a semiconductor having a bandgap that is greater than 3.1 eV and less than or equal to 6.9 eV. 
     
     
         17 . The interior object of  claim 16 , wherein the semiconductor comprises a material chosen from diamond, lithium niobite, tin dioxide, nickel(II) oxide, zinc sulfide, boron arsenide, gallium nitride, silicon carbide, 4H-SiC, titanium dioxide, anatase, fluorinated tin oxide, indium tin oxide and mixtures thereof. 
     
     
         18 . The interior object of  claim 13 , wherein the continuous inorganic film is an insulator. 
     
     
         19 . The interior object of  claim 18 , wherein the insulator is chosen from diamond-like carbon, indium oxide, chromium nitride, aluminosilicate glass, borosilicate glass and borosilicate-lime glass. 
     
     
         20 . The interior object of  claim 13 , wherein the interior object further comprises a barrier layer over the continuous inorganic film.