Wafer scale packaging

Abstract

A method of wafer scale packaging acoustic resonator devices and an apparatus therefor. The method including providing a partially completed semiconductor substrate comprising a plurality of single crystal acoustic resonator devices, each having a first electrode member, a second electrode member, and an overlying passivation material. At least one of the devices to be configured with an external connection, a repassivation material overlying the passivation material, an under metal material overlying the repassivation material. Copper pillar interconnect structures are then configured overlying the electrode members, and solder bump structures are form overlying the copper pillar interconnect structures.

What is claimed is: 
     
         1 . A method of wafer scale packaging Group III-Nitride containing devices, the method comprising:
 providing a substrate member having a surface region;   forming a thickness of Group III-Nitride material overlying the surface region;   forming an insulating material overlying a portion of the thickness of Group III-Nitride material;   forming a contact region to expose a portion of the thickness of the Group III-Nitride material; and   forming a pillar structure comprising a copper material within the contact region.   
     
     
         2 . The method of  claim 1  further comprising forming a thickness of solder material overlying the pillar structure to cause formation of a solder bump; and
 bonding the solder bump to a contact member on a substrate structure. 
 
     
     
         3 . The method of  claim 1  wherein the Group III-Nitride material is deposited by LPCVD; and
 further comprising using dichlorosilane (DCS), provided with or without Ammonia, to clean and prepare a surface of the Group III-Nitride material for single crystal growth. 
 
     
     
         4 . The method of  claim 1  wherein the Group III-Nitride material is selected from at least one of a single crystal oxide including a high K dielectric, ZnO, or MgO. 
     
     
         5 . The method of  claim 1  wherein the Group III-Nitride material is characterized by X-ray diffraction with clear peak at a detector angle (2-θ) associated with single crystal film and whose Full Width Half Maximum (FWHM) is measured to be less than 1.0°. 
     
     
         6 . A wafer scale package apparatus having Group III-Nitride containing devices, the apparatus comprising:
 a substrate member having a surface region;   a thickness of Group III-Nitride material formed overlying the surface region;   an insulating material formed overlying a portion of the thickness of Group III-Nitride material;   a contact region formed to expose a portion of the thickness of the Group III-Nitride material; and   a pillar structure comprising a copper material formed within the contact region.   
     
     
         7 . The apparatus of  claim 6  further comprising a thickness of solder material formed overlying the pillar structure to cause formation of a solder bump; and
 a contact member formed on a substrate structure bonded to the solder bump. 
 
     
     
         8 . The apparatus of  claim 6  wherein the Group III-Nitride material is a Group III-Nitride material deposited by LPCVD; and
 wherein the Group III-Nitride material is a Group III-Nitride material having a surface cleaned and prepared for single crystal growth using dichlorosilane (DCS), provided with or without Ammonia. 
 
     
     
         9 . The apparatus of  claim 6  wherein the Group III-Nitride material is selected from at least one of a single crystal oxide including a high K dielectric, ZnO, or MgO. 
     
     
         10 . The apparatus of  claim 6  wherein the Group III-Nitride material is characterized by X-ray diffraction with clear peak at a detector angle (2-θ) associated with single crystal film and whose Full Width Half Maximum (FWHM) is measured to be less than 1.0°.