Photon sensor

Abstract

Provided herein are technologies relating to detecting x-rays and particularly, but not exclusively, to compositions, devices, systems, and methods for x-ray imaging using a direct-conversion x-ray sensor comprising a perovskite composition that minimizes and/or eliminates in-sensor k-fluorescence in photon energy channels used for medical imaging. Exemplary perovskite compositions described are those that comprise a structure of ABX3, in which A represents an inorganic and/or organic cation, B represents a heavy metal cation, and X represents a halide.

1 - 166 . (canceled) 
     
     
         167 . A photon-counting sensor comprising:
 a perovskite composition that is compositionally tuned to minimize and/or eliminate k-fluorescence from 20 to 140 keV;   a first electrode in electrical communication with the perovskite composition; and   a second electrode in electrical communication with the perovskite composition.   
     
     
         168 . The photon-counting sensor of  claim 167  wherein said first electrode is a through-silicon-via electrode and the second electrode is a common electrode. 
     
     
         169 . The photon-counting sensor of  claim 167 , wherein said perovskite composition has a formula ABX 3 , wherein A has no kedge, B is a high-Z material, and X has a k-edge at an energy less than 60 keV. 
     
     
         170 . The photon-counting sensor of  claim 169 , wherein X comprises a halide or comprises a fractional composition of a plurality of halides. 
     
     
         171 . The photon-counting sensor of  claim 169 , wherein A comprises an organic cation, an inorganic cation, a methylammonium, a formamidinium, a cesium ion, a cadmium ion, or a rubidium ion, anchor combinations thereof. 
     
     
         172 . lie pl-aoton counting sensor of  claim 169 , wherein B comprises lead or tin. 
     
     
         173 . The photon-counting sensor of  claim 167 , wherein said perovskite composition comprises foramidinium lead tribromide (FAPbBr 3 ). 
     
     
         174 . The photon-counting sensor of  claim 167 , wherein said perovskite composition comprises methylammonium lead triiodide (MAPbI 3 ). 
     
     
         175 . The photon-counting sensor of  claim 167 , whererin the perovskite composition comprises a single perovskite crystal. 
     
     
         176 . The photon-counting sensor of  claim 167 , wherein the perovskite composition is 200 μm to 1 min thick. 
     
     
         177 . The photon-counting sensor of  claim 167 , wherein the perovskite composition has a thickness that varies less than  100  μm. 
     
     
         178 . The photon-counting sensor of  claim 167 , wherein the photon-counting sensor comprises a pixel having dimensions of less than 500 μm×500 μm. 
     
     
         179 . The photon-counting sensor of  claim 167 , further comprising a readout integrated circuit (ROIC). 
     
     
         180 . The photon-counting sensor of  claim 179 , wherein the perovskite composition is grown directly on the ROIC. 
     
     
         181 . The photon-counting sensor of  claim 179 , wherein the ROTC is an application-specific integrated circuit (ASIC). 
     
     
         182 . The photon-counting sensor of  claim 167 , comprising:
 a first perovskite composition;   a second perovskite composition;   a common electrode in electrical communication with the first perovskite composition and the second perovskite composition;   a first sensor electrode in electrical communication with the first perovskite composition; and   a second sensor electrode in electrical communication with the second perovskite composition.   
     
     
         183 . The photon-counting sensor of  claim 182 , wherein the first perovskite composition absorbs x-ray photons of 60 keV or less. 
     
     
         184 . The photon-counting sensor of  claim 182 , wherein the second perovskite composition absorbs x-ray photons of 120 keV or less. 
     
     
         185 . The photon-counting sensor of  claim 182 , wherein said first sensor electrode is a through-silicon-via electrode and/or the second sensor electrode is a through-silicon-via-electrode. 
     
     
         186 . The photon counting sensor of  claim 182 , wherein the photon-counting sensor comprises a readout integrated circuit (ROTC) and the second perovskite composition is grown directly on the ROTC. 
     
     
         187 . The photon-counting sensor of  claim 186 . wherein the ROTC is an application-specific integrated circuit (AS IC). 
     
     
         188 . The photon-counting sensor of claim  18  wherein the first perovskite composition is provided as a layer on the second perovskite composition; and a perovskite layer interface separates the first perovskite composition from the second perovskite composition.