Method of forming semiconductor packages having thermal through vias (ttv)

Abstract

A method of forming a semiconductor package includes the following steps. A redistribution layer structure is formed over a first die and a dummy die, wherein the redistribution layer structure is directly electrically connected to the first die. An insulating layer is formed, wherein the insulating layer is disposed opposite to the redistribution layer structure with respect to the first die. At least one thermal through via is formed in the insulating layer.

What is claimed is: 
     
         1 . A method of forming a semiconductor package, comprising:
 forming a redistribution layer structure over a first die and a dummy die, wherein the redistribution layer structure is directly electrically connected to the first die;   forming an insulating layer, wherein the insulating layer is disposed opposite to the redistribution layer structure with respect to the first die; and   forming at least one thermal through via in the insulating layer.   
     
     
         2 . The method as claimed in  claim 1 , wherein the dummy die is electrically connected to the first die through the redistribution layer structure. 
     
     
         3 . The method as claimed in  claim 1 , further comprising forming at least one through via aside the first die between the redistribution layer structure and the at least one thermal through via. 
     
     
         4 . The method as claimed in  claim 1 , further comprising forming connectors over the redistribution layer structure. 
     
     
         5 . The method as claimed in  claim 4 , wherein the first die is disposed in a first region, the dummy die is disposed in a second region, a density of the connectors in the first region is equal to the number of the connectors in the first region divided by an area of the first region, a density of the connectors in the second region is equal to the number of the connectors in the second region divided by an area of the second region, and the density of the connectors in the second region is larger than the density of the connectors in the first region. 
     
     
         6 . The method as claimed in  claim 1 , further comprising forming other redistribution layer structure between the insulating layer and the first die and the dummy die, wherein the at least one thermal through via is electrically connected to the redistribution layer structure through the other redistribution layer structure. 
     
     
         7 . The method as claimed in  claim 1 , wherein the first die is disposed in a first region, the dummy die is disposed in a second region, a density of the at least one thermal through via in the first region is equal to the number of the at least one thermal through via in the first region divided by an area of the first region, a density of the at least one thermal through via in the second region is equal to the number of the at least one thermal through via in the second region divided by an area of the second region, and the density of the at least one thermal through via in the first region is larger than the density of the at least one thermal through via in the second region. 
     
     
         8 . A method of forming a semiconductor package, comprising:
 forming a first die over a conductive paste; and   forming at least one thermal through via over a first die, wherein the conductive paste is disposed between the first die and the at least one thermal through via, and the at least one thermal through via is electrically connected to the first die through the conductive paste.   
     
     
         9 . The method as claimed in  claim 8 , wherein the conductive paste is in direct contact with the first die. 
     
     
         10 . The method as claimed in  claim 8 , further comprising forming a dummy die aside the first die. 
     
     
         11 . The method as claimed in  claim 10 , wherein the conductive paste is further in direct contact with the dummy die. 
     
     
         12 . The method as claimed in  claim 8 , further comprising forming a redistribution layer structure electrically connected to the first die, wherein the redistribution layer structure and the at least one thermal through via are disposed at opposite sides of the first die. 
     
     
         13 . The method as claimed in  claim 12 , wherein further comprising forming a plurality of connectors, wherein the redistribution layer structure is disposed between the connectors and the first die. 
     
     
         14 . The method as claimed in  claim 8 , further comprising forming an insulating layer surrounding the at least one thermal through via. 
     
     
         15 . A method of forming a semiconductor package, comprising:
 forming at least one first through via in an encapsulant;   forming a redistribution layer structure over the at least one first through via; and   forming at least one thermal through via over the redistribution layer structure and the encapsulant, wherein the redistribution layer structure is electrically connected to the at least one first through via and the at least one thermal through via.   
     
     
         16 . The method as claimed in  claim 15 , further comprising forming a die aside the at least one first through via in the encapsulant, wherein the at least one thermal through via is electrically connected to the die through the at least one first through via. 
     
     
         17 . The method as claimed in  claim 16 , further comprising forming a die attach film between the die and the at least one thermal through via. 
     
     
         18 . The method as claimed in  claim 16 , further comprising forming a conductive paste between the die and the redistribution layer structure. 
     
     
         19 . The method as claimed in  claim 18 , wherein the conductive paste is in direct contact with the die and the redistribution layer structure. 
     
     
         20 . The method as claimed in  claim 15 , wherein surfaces of the at least one first through via and the encapsulant are substantially coplanar.