Method of making a molded interconnect device

Abstract

A method of forming a molded interconnect device (MID) is provided. The method includes the steps of performing a molding stage, performing a circuit forming stage, and performing a plate stage. As a part of the molding stage, a palladium-catalyzed material is injection molded into a palladium-catalyzed substrate of a desired shape. As a part of the circuit forming stage, both a metallization step and a circuit patterning step are performed. As a part of the plating stage, both an electrolytic plating step and a circuit isolation step are performed.

1 . A method of forming a molded interconnect device (MID), the method comprising the steps of:
 a) performing a molding stage, wherein a palladium-catalyzed material is injection molded into a palladium-catalyzed substrate of a desired shape;   b) performing a circuit forming stage, wherein
 b1) a metallization step is performed, and 
 b2) a circuit patterning step is performed; and 
   c) performing a plating stage, wherein
 c1) an electrolytic plating step is performed, and 
 c2) a circuit isolation step is performed to provide the MID. 
   
     
     
         2 . The method as defined in  claim 1 , wherein the metallization step of step b1) comprises forming a thin copper film over an exposed surface of the palladium-catalyzed substrate. 
     
     
         3 . The method as defined in  claim 1 , wherein the circuit pattering step of step b2) comprises removing some of the copper film from the palladium-catalyzed substrate to provide first and second portions of the copper film which are separated from one another. 
     
     
         4 . The method as defined in  claim 3 , wherein the removal of some of the copper film in step b2) is performed by a laser. 
     
     
         5 . The method as defined in  claim 3 , wherein the at least first and second portions of the copper film provided in step b2) are separated from one another by at least one exposed portion of the palladium-catalyzed substrate. 
     
     
         6 . The method as defined in  claim 3 , wherein the electrolytic plating step of step c1) comprises electrolytic copper plating, electrolytic nickel plating, and electrolytic gold plating. 
     
     
         7 . The method as defined in  claim 3 , wherein the electrolytic plating step of step c1) comprises electrolytically plating the first portion of the copper film to form a metallic-plated first portion. 
     
     
         8 . The method as defined in  claim 7 , wherein the current isolation step of step c2) comprises removing the second portion of the copper film. 
     
     
         9 . The method as defined in  claim 8 , wherein the removal of the second portion of the copper film in step c2) is performed by a laser. 
     
     
         10 . The method as defined in  claim 8 , wherein the removal of the second portion of the copper film in step c2) is performed by soft etching. 
     
     
         11 . The method as defined in  claim 8 , wherein step c) further comprises steps c3) and c4), wherein in step c3) a solder resist addition step is performed, wherein in step c4) a solder resist removal step is performed, and wherein step c4) is performed after step c3) is performed. 
     
     
         12 . The method as defined in  claim 11 , wherein steps c3) and c4) are performed before step c2) is performed. 
     
     
         13 . The method as defined in  claim 3 , wherein the circuit patterning step of step b2) further provides a third portion of the copper film which separates the first portion of the copper film from the second portion of the copper film, the third portion of the copper film connecting the first portion of the copper film to the second portion of the copper film. 
     
     
         14 . The method as defined in  claim 13 , wherein the first portion of the copper film forms a circuit patter, wherein the second portion of the copper film is a Faraday cage portion, and wherein the third portion of the copper film is a bus portion. 
     
     
         15 . The method as defined in  claim 13 , wherein the electrolytic plating step of step c1) comprises electrolytically plating the first, second and third portions of the copper film to form metallic-plated first, second and third portions. 
     
     
         16 . The method as defined in  claim 15 , wherein the current isolation step of step c2) comprises removing the metallic-plated third portion to electrically isolate the metallic-plated first portion from the metallic-plated third portion. 
     
     
         17 . The method as defined in  claim 16 , wherein the removal of the metallic-plated third portion in step c2) is performed by a laser. 
     
     
         18 . The method as defined in  claim 16 , wherein the removal of the metallic-plated third portion in step c2) is performed by soft etching. 
     
     
         19 . The method as defined in  claim 16 , wherein step c) further comprises steps c3) and c4), wherein in step c3) a solder resist addition step is performed, wherein in step c4) a solder resist removal step is performed, and wherein step c4) is performed after step c3) is performed. 
     
     
         20 . The method as defined in  claim 19 , wherein steps c3) and c4) are performed before step c2) is performed. 
     
     
         21 . A method of forming a molded interconnect device (MID), the method comprising the steps of:
 a) injection molding a palladium-catalyzed material into a palladium-catalyzed substrate of a desired shape;   b) forming a thin copper film over exposed surfaces of the palladium-catalyzed substrate;   c) removing some of the copper film from the palladium-catalyzed substrate to provide first and second portions of the copper film and at least one exposed portion of the palladium-catalyzed substrate, the first and second portions of the copper film being separated from one another by the at least one exposed portion of the palladium-catalyzed substrate;   d) electrolytically plating the first portion of the copper film to form a metallic-plated first portion; and   e) removing the second portion of the copper film to provide the MID.   
     
     
         22 . A method of forming a molded interconnect device (MID), the method comprising the steps of:
 a) injection molding a palladium-catalyzed material into a palladium-catalyzed substrate of a desired shape;   b) forming a thin copper film over exposed surfaces of the palladium-catalyzed substrate;   c) removing some of the copper film from the palladium-catalyzed substrate to provide first, second and third portions of the copper film, the second portion of the copper film connecting the first portion of the copper film to the third portion of the copper film;   d) electrolytically plating the first, second and third portions of the copper film to form metallic-plated first, second and third portions; and   e) removing the metallic-plated second portion in order to isolate the metallic-plated first portion from the metallic-plated third portion to provide the MID.