Substrate cleaning method, substrate cleaning system, and memory medium

Abstract

A method for cleaning a substrate includes supplying, to a substrate which does not have a resist formed thereon, a film-forming processing liquid which includes a volatile component and forms a processing film, volatilizing the volatile component of the film-forming processing liquid such that the film-forming processing liquid on the substrate is solidified or cured and that the processing film is formed on the substrate, heating a peeling processing liquid which peels off the processing film from the substrate without dissolving the processing film such that a heated peeling processing liquid is prepared, and supplying, to the processing film formed on the substrate, the heated peeling processing liquid such that the heated peeling processing liquid peels off the processing film from the substrate without dissolving the processing film.

What is claimed is: 
     
         1 . A method for cleaning a substrate, comprising:
 supplying, to a substrate which does not have a resist formed thereon, a film-forming processing liquid which includes a volatile component and forms a processing film;   volatilizing the volatile component of the film-forming processing liquid such that the film-forming processing liquid on the substrate is solidified or cured and that the processing film is formed on the substrate;   heating a peeling processing liquid which peels off the processing film from the substrate without dissolving the processing film such that a heated peeling processing liquid is prepared; and   supplying, to the processing film formed on the substrate, the heated peeling processing liquid such that the heated peeling processing liquid peels off the processing film from the substrate without dissolving the processing film.   
     
     
         2 . The method of  claim 1 , further comprising:
 heating a rinse liquid such that a heated rinse liquid is prepared; and   supplying the heated rinse liquid after the heated peeling processing liquid is supplied on the processing film on the substrate such that a temperature of the heated peeling processing liquid is higher than a temperature of the heated rinse liquid.   
     
     
         3 . The method of  claim 2 , wherein the peeling processing liquid and the rinse liquid are pure water. 
     
     
         4 . The method of  claim 3 , wherein the supplying of the heated peeling processing liquid includes supplying the heated peeling processing liquid to the processing film from a bar nozzle having a plurality of discharge ports positioned side by side at an interval along a radial direction of the substrate. 
     
     
         5 . The method of  claim 2 , wherein the supplying of the heated peeling processing liquid includes supplying the heated peeling processing liquid to the processing film from a bar nozzle having a plurality of discharge ports positioned side by side at an interval along a radial direction of the substrate. 
     
     
         6 . The method of  claim 1 , wherein the supplying of the heated peeling processing liquid includes supplying the heated peeling processing liquid to the processing film from a bar nozzle having a plurality of discharge ports positioned side by side at an interval along a radial direction of the substrate. 
     
     
         7 . The method of  claim 1 , wherein the peeling processing liquid is pure water. 
     
     
         8 . The method of  claim 7 , further comprising:
 heating a rinse liquid such that a heated rinse liquid is prepared; and   supplying the heated rinse liquid after the heated peeling processing liquid is supplied on the processing film on the substrate such that a temperature of the heated peeling processing liquid is higher than a temperature of the heated rinse liquid.   
     
     
         9 . The method of  claim 7 , wherein the supplying of the heated peeling processing liquid includes supplying the heated peeling processing liquid to the processing film from a bar nozzle having a plurality of discharge ports positioned side by side at an interval along a radial direction of the substrate. 
     
     
         10 . The method of  claim 8 , wherein the supplying of the heated peeling processing liquid includes supplying the heated peeling processing liquid to the processing film from a bar nozzle having a plurality of discharge ports positioned side by side at an interval along a radial direction of the substrate. 
     
     
         11 . The method of  claim 2 , wherein the rinse liquid is pure water. 
     
     
         12 . The method of  claim 11 , wherein the supplying of the heated peeling processing liquid includes supplying the heated peeling processing liquid to the processing film from a bar nozzle having a plurality of discharge ports positioned side by side at an interval along a radial direction of the substrate. 
     
     
         13 . A system for cleaning a substrate, comprising:
 a film-forming processing liquid supply device which supplies, to a substrate on which a resist has not been formed, a film-forming processing liquid which includes a volatile component and forms a processing film when the volatile component is volatilized and the film-forming processing liquid is solidified or cured on the substrate;   a peeling processing liquid heating device which heats a peeling processing liquid which peels off the processing film from the substrate such that a heated peeling processing liquid is prepared; and   a peeling processing liquid supply device which supplies the heated peeling processing liquid to the processing film formed on the substrate such that the heated peeling processing liquid peels off the processing film from the substrate without dissolving the processing film.   
     
     
         14 . The system according to  claim 13 , wherein the peeling processing liquid is pure water. 
     
     
         15 . The system according to  claim 13 , wherein the peeling processing liquid supply device includes a bar nozzle having a plurality of discharge ports positioned side by side at an interval along a radial direction of the substrate such that the bar nozzle supplies the heated peeling processing liquid to the processing film formed on the substrate. 
     
     
         16 . The system according to  claim 12 , wherein the peeling processing liquid supply device includes a bar nozzle having a plurality of discharge ports positioned side by side at an interval along a radial direction of the substrate such that the bar nozzle supplies the heated peeling processing liquid to the processing film formed on the substrate. 
     
     
         17 . The system according to  claim 13 , further comprising:
 a control device comprising circuitry configured to supply, from the film-forming processing liquid supply device to the substrate which does not have the resist formed thereon, the film-forming processing liquid, volatilize the volatile component of the film-forming processing liquid such that the film-forming processing liquid on the substrate is solidified or cured and that the processing film is formed on the substrate, heat the peeling processing liquid such that the heated peeling processing liquid is prepared, and supply, to the processing film formed on the substrate, the heated peeling processing liquid such that the heated peeling processing liquid peels off the processing film from the substrate without dissolving the processing film.   
     
     
         18 . The system according to  claim 17 , wherein the peeling processing liquid is pure water. 
     
     
         19 . The system according to  claim 17 , wherein the peeling processing liquid supply device includes a bar nozzle having a plurality of discharge ports positioned side by side at an interval along a radial direction of the substrate such that the bar nozzle supplies the heated peeling processing liquid to the processing film formed on the substrate. 
     
     
         20 . A non-transitory computer-readable medium stored thereon a program that when executed by a control device of a substrate cleaning system, the substrate cleaning system executes the method of  claim 1 .