Storage element and memory

Abstract

A storage element includes a storage layer, a fixed magnetization layer, a spin barrier layer, and a spin absorption layer. The storage layer stores information based on a magnetization state of a magnetic material. The fixed magnetization layer is provided for the storage layer through a tunnel insulating layer. The spin barrier layer suppresses diffusion of spin-polarized electrons and is provided on the side of the storage layer opposite the fixed magnetization layer. The spin absorption layer is formed of a nonmagnetic metal layer causing spin pumping and provided on the side of the spin barrier layer opposite the storage layer. A direction of magnetization in the storage layer is changed by passing current in a layering direction to inject spin-polarized electrons so that information is recorded in the storage layer and the spin barrier layer includes at least a material selected from oxides, nitrides, and fluorides.

The invention is claimed as follows: 
     
         1 . A storage element comprising:
 a layer structure including   a first magnetization layer having a first magnetization state;   a second magnetization layer having a second magnetization state;   an intermediate layer provided between the first magnetization layer and the second magnetization layer;   a third layer including at least one of Pt, Ru, Pd and Au; and   a fourth layer including at least one of an oxide, a nitride and a fluoride,   wherein the second magnetization state is a fixed magnetization state.   
     
     
         2 . The storage element according to  claim 1 , wherein the fourth layer is provided between the third layer and the first magnetization layer. 
     
     
         3 . The storage element according to  claim 1 , wherein the second magnetization layer includes at least a first sublayer having a first magnetization direction and a second sublayer having a second magnetization direction. 
     
     
         4 . The storage element according to  claim 3 , wherein the second magnetization layer includes a third sublayer between the first sublayer and the second sublayer, and the third sublayer is a non-magnetic layer. 
     
     
         5 . The storage element according to  claim 4 , wherein the second magnetization layer includes a fourth sublayer, the second sublayer being between the third sublayer and the fourth sublayer, and the fourth sublayer is an antiferromagnetic layer. 
     
     
         6 . The storage element according to  claim 5 , wherein the fourth sublayer includes a material comprising one or more elements, and the one or more elements includes Pt. 
     
     
         7 . The storage element according to  claim 6 , wherein the third sublayer includes a material comprising one or more elements, and the one or more elements includes W. 
     
     
         8 . The storage element according to  claim 7 , wherein the third sublayer has a thickness from 0.5 to 2.5 nm. 
     
     
         9 . The storage element according to  claim 3 , wherein at least one of the first sublayer and the second sublayer includes a material having an element selected from a group consisting of Fe, Ni and Co. 
     
     
         10 . The storage element according to  claim 1 , wherein the storage element further includes an underlayer, and the underlayer includes Ta. 
     
     
         11 . The storage element according to  claim 1 , wherein the fourth layer includes a material comprising at least two elements, and one of the at least two elements is Ta. 
     
     
         12 . The storage element according to  claim 1 , wherein the intermediate layer includes at least one of magnesium oxide, aluminum oxide, aluminum nitride, SiO 2 , Bi 2 O 3 , MgF 2 , CaF, SrTiO 2 , AlLaO 3 , and AlNIO. 
     
     
         13 . The storage element according to  claim 1 , wherein the intermediate layer has a thickness of 1.5 nm or less. 
     
     
         14 . The storage element according to  claim 1 , wherein the intermediate layer has a thickness of approximately 0.8 nm. 
     
     
         15 . The storage element according to  claim 1 , wherein the second magnetization layer has a thickness from 1 nm to 40 nm. 
     
     
         16 . The storage element according to  claim 1 , wherein the first magnetization layer has a thickness from 1 nm to 10 nm. 
     
     
         17 . The storage element according to  claim 16 , wherein the first magnetization layer has a thickness less than 5 nm. 
     
     
         18 . The storage element according to  claim 1 , wherein the second magnetization layer is thicker than the first magnetization layer. 
     
     
         19 . A memory comprising:
 a storage element; and   two lines that intersect with each other,   wherein the storage element includes   a layer structure including   a first magnetization layer having a first magnetization state;   a second magnetization layer having a second magnetization state;   an intermediate layer provided between the first magnetization layer and the second magnetization layer;   a third layer including at least one of Pt, Ru, Pd and Au; and   a fourth layer including at least one of an oxide, a nitride and a fluoride,   wherein the second magnetization state is a fixed magnetization state.   
     
     
         20 . The memory according to  claim 19 , wherein the fourth layer is provided between the third layer and the first magnetization layer.